Abstract: A band-pass filter includes a first input/output port, a second input/output port, a plurality of resonators, and a multilayer stack. The multilayer stack includes a plurality of stacked dielectric layers. Each of the resonators is an open-ended resonator formed of a conductor line in the multilayer stack. Each of the resonators includes a resonator conductor portion including a first line part and a second line part located away from each other in a direction orthogonal to a stacking direction of the plurality of dielectric layers, and a third line part connecting the first line part and the second line part. The first to third line parts extend to surround a space between the first line part and the second line part.

Abstract: A crosslinking composition comprising an epichlorohydrin based polymer (a), a triazine type crosslinking agent (b), and magnesium carbonate (c). The crosslinking composition further comprises a polyhydric alcohol (d) which is preferably pentaerythritol type compound. In the crosslinking composition, the polyhydric alcohol (d) is preferably contained in an amount of 0.1 to 10 parts by weight for 100 parts by weight of the epichlorohydrin based polymer (a).

Abstract: A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like. The thin microcrystalline silicon semiconductor film comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.

Abstract: A method for preparing an amorphous silicon solar cell is disclosed which comprises forming on a substrate, in the following order, a first electrode, a first conductive film, a thin first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode.the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of:(a) depositing a semiconductor film containing 20 atom % or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 .ANG., and then (b) modifying the deposited film, the sequence of steps being repeated multiple times.The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.

Abstract: A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.

Abstract: A formation process of an amorphous silicon film, which process comprises subjecting a higher silane containing at least two silicon atoms to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.