Patents by Inventor Yoshinori Cho

Yoshinori Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Load port
    Patent number: 9010384
    Abstract: A load part has a nozzle unit having outlets for generating outflow and/or inflow of gas used for replacing the atmosphere of a wafer storage container, in a direction approximately parallel to spaces between adjacent wafers being stored, are a driving unit for extending the nozzle unit to a door opening portion.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: April 21, 2015
    Assignee: Right Mfg. Co. Ltd.
    Inventors: Takehiko Yoshimura, Tatsuhiko Nagata, Masaru Seki, Yoshinori Cho
  • LOAD PORT
    Publication number: 20130000757
    Abstract: A load part has a nozzle unit having outlets for generating outflow and/or inflow of gas used for replacing the atmosphere of a wafer storage container, in a direction approximately parallel to spaces between adjacent wafers being stored, are a driving unit for extending the nozzle unit to a door opening portion.
    Type: Application
    Filed: February 2, 2012
    Publication date: January 3, 2013
    Applicant: RIGHT MFG., CO., LTD.
    Inventors: Takehiko YOSHIMURA, Tatsuhiko NAGATA, Masaru SEKI, Yoshinori CHO
  • Method for producing low-film, semiconductor device, and method for manufacturing the same
    Patent number: 8253251
    Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: August 28, 2012
    Assignee: Elpida Memory, Inc.
    Inventors: Yoshinori Cho, Takamaro Kikkawa
  • METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110309511
    Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.
    Type: Application
    Filed: August 31, 2011
    Publication date: December 22, 2011
    Applicant: Elpida Memory, Inc.
    Inventors: Yoshinori CHO, Takamaro Kikkawa
  • Method for producing low-k l film, semiconductor device, and method for manufacturing the same
    Patent number: 8030221
    Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: October 4, 2011
    Assignee: Elpida Memory, Inc.
    Inventors: Yoshinori Cho, Takamaro Kikkawa
  • METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20100289143
    Abstract: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.
    Type: Application
    Filed: November 12, 2009
    Publication date: November 18, 2010
    Applicants: Elpida Memory, Inc, Hiroshima University
    Inventors: Yoshinori Cho, Takamaro Kikkawa
  • Load port
    Publication number: 20090169342
    Abstract: A load port (100) comprises: a mounting base (101) for mounting a wafer carrier (10); a nozzle unit (110) having nozzle outlets (111) for generating an outflow/inflow of a purge gas in a direction approximately parallel to spaces (A) between wafers (1) stored within the wafer carrier (10) so as to replace the atmosphere of the wafer carrier (10); a driving unit including a nozzle driving motor (166) etc.
    Type: Application
    Filed: June 21, 2004
    Publication date: July 2, 2009
    Inventors: Takehiko Yoshimura, Tatsuhiko Nagata, Masaru Seki, Yoshinori Cho