Abstract: A compound containing Sn, Te and Mn, and further containing either one or both of Sb and Bi.

Abstract: An imaging device includes a photoelectric conversion layer, a counter electrode provided above the photoelectric conversion layer, a pixel electrode that faces the counter electrode with the photoelectric conversion layer disposed between the counter electrode and the pixel electrode, and a contact plug covered with the pixel electrode and connected to the pixel electrode. The pixel electrode includes a first layer and a second layer provided on the first layer in contact with the first layer. A surface of the first layer that is in contact with the second layer has a protrusion that protrudes upward.

Abstract: Provided is an Ir alloy which is excellent in high temperature strength while ensuring oxidation wear resistance at high temperature. The Ir alloy consists of: 7 mass % or more, and less than 10 mass % of Rh; 0.5 mass % to 5 mass % of Ta; 0 mass % to 5 mass % of at least one kind of element selected from among Co, Cr, and Ni; and Ir as the balance, wherein a total content of the Ta and the at least one kind of element selected from among Co, Cr, and Ni is 5 mass % or less.

Abstract: Provided is an Ir alloy which is excellent in high temperature strength while ensuring oxidation wear resistance at high temperature. The Ir alloy consists of: 7 mass % or more, and less than 10 mass % of Rh; 0.5 mass % to 5 mass % of Ta; 0 mass % to 5 mass % of at least one kind of element selected from among Co, Cr, and Ni; and Ir as the balance, wherein a total content of the Ta and the at least one kind of element selected from among Co, Cr, and Ni is 5 mass % or less.

Abstract: An Ir alloy is excellent in high temperature strength while ensuring oxidation wear resistance at high temperature. The heat-resistant Ir alloy includes: 5 mass % to 30 mass % of Rh; 0.3 mass % to 5 mass % of an element group A made of at least one kind of element selected from among Ta and Re; and 0 mass % to 5 mass % of an element group B made of at least one kind of element selected from among Co, Cr, and Ni, wherein the heat-resistant Ir alloy includes 5 mass % or less of the element group A and the element group B in total, and wherein, when the at least one kind of element in the element group A includes Re, the at least one kind of element in the element group B is Co alone, Cr alone, or two or more kinds selected from Co, Cr, and Ni.

Abstract: A coin-roll handling device includes a coin-roll characteristic-value detecting unit 50 configured to detect at least one of a first characteristic value relating to a diameter of a roll of coins being transported by a transporting unit 40 and a second characteristic value relating to a material of the roll of coins being transported by the transporting unit 40, provided downstream of a storage unit 10 in a transportation direction of the roll of coins by the transporting unit 40 and a denomination determining unit 92 configured to determine a denomination of the roll of coins based on at least one of the first characteristic value relating to the diameter of the roll of coins and the second characteristic value relating to the material of the roll of coins detected by the coin-roll characteristic-value detecting unit 50.

Abstract: A method for producing a platinum group metal or a platinum group-based alloy according to the present invention includes a preparing step of weighing a raw material that is partially or entirely of powder, a molding step of molding and solidifying the prepared raw material to obtain molded bodies, a sintering step of sintering the molded bodies to obtain a sintered body, a melting step of melting the sintered body to produce a molten ingot, and a deformation processing step of processing the molten ingot. In the sintering step, the molded bodies are sintered in a stacked state to produce a sintered body as a joined body.

Abstract: An Ir alloy is excellent in high temperature strength while ensuring oxidation wear resistance at high temperature. The heat-resistant Ir alloy includes: 5 mass % to 30 mass % of Rh; 0.3 mass % to 5 mass % of an element group A made of at least one kind of element selected from among Ta and Re; and 0 mass % to 5 mass % of an element group B made of at least one kind of element selected from among Co, Cr, and Ni, wherein the heat-resistant Ir alloy includes 5 mass % or less of the element group A and the element group B in total, and wherein, when the at least one kind of element in the element group A includes Re, the at least one kind of element in the element group B is Co alone, Cr alone, or two or more kinds selected from Co, Cr, and Ni.

Abstract: An object of the present invention is to provide a molten ingot of a platinum group metal or a platinum group-based alloy having a high material yield by suppressing a scattering phenomenon during heating and melting in a method for producing a platinum group metal or a platinum group-based alloy. The method for producing a platinum group metal or a platinum group-based alloy according to the present invention includes a preparing step of weighing a raw material that is partially or entirely of powder and, when the alloy is to be produced, mixing the weighed raw material to obtain a powder mixture, a molding step of molding and solidifying the prepared raw material to obtain molded bodies, a sintering step of sintering the molded bodies to obtain a sintered body, a melting step of melting the sintered body to produce a molten ingot, and a deformation processing step of processing the molten ingot.

Abstract: A pipe material used as a discharge electrode of a spark plug for an internal combustion engine comprises an outer layer made of a Ni-based alloy, an inner layer made of a Pt-based alloy provided inside the outer layer, and an intermediate layer provided between the outer layer and the inner layer.

Abstract: A coin-roll handling device includes a coin-roll characteristic-value detecting unit 50 configured to detect at least one of a first characteristic value relating to a diameter of a roll of coins being transported by a transporting unit 40 and a second characteristic value relating to a material of the roll of coins being transported by the transporting unit 40, provided downstream of a storage unit 10 in a transportation direction of the roll of coins by the transporting unit 40 and a denomination determining unit 92 configured to determine a denomination of the roll of coins based on at least one of the first characteristic value relating to the diameter of the roll of coins and the second characteristic value relating to the material of the roll of coins detected by the coin-roll characteristic-value detecting unit 50.

Abstract: Provided is a method for producing a platinum group-based alloy capable of producing a sound molten ingot of a platinum group-based alloy in a large amount.

Abstract: An object of the present invention is to provide a molten ingot of a platinum group metal or a platinum group-based alloy having a high material yield by suppressing a scattering phenomenon during heating and melting in a method for producing a platinum group metal or a platinum group-based alloy. The method for producing a platinum group metal or a platinum group-based alloy according to the present invention includes a preparing step of weighing a raw material that is partially or entirely of powder and, when the alloy is to be produced, mixing the weighed raw material to obtain a powder mixture, a molding step of molding and solidifying the prepared raw material to obtain molded bodies, a sintering step of sintering the molded bodies to obtain a sintered body, a melting step of melting the sintered body to produce a molten ingot, and a deformation processing step of processing the molten ingot.

Abstract: Provided is a method for producing a platinum group-based alloy capable of producing a sound molten ingot of a platinum group-based alloy in a large amount.

Abstract: A spark plug has a center electrode and an earth electrode. The center electrode is faced to the earth electrode so that a spark discharging gap is formed between the center electrode and the earth electrode. An electrode chip is formed on at least one of the center electrode and the earth electrode. The electrode chip has a composition containing 40 to 60 mol % of aluminum and iridium as a remainder thereof. In the composition of the electrode chip, it is possible to replace part of the iridium with 1 to 20 mol % of at least one metal selected from nickel, iron, cobalt, platinum and rhodium.

Abstract: A spark plug for use in an internal combustion engine has a center electrode, an earth electrode, and an electrode chip formed on at least one of the center electrode and the earth electrode. A spark discharge gap is formed between the center electrode and the earth electrode. The electrode chip has a base section, a chromium rich layer formed on at least a part of the base section, and a diffusion layer formed between the base section and the chromium rich layer. The base section contains chromium within a range of 5 to 45 mass %, an element X within a range of 0.5 to 25 mass %, and a remainder composed of tungsten and unavoidable impurity. The chromium rich layer is larger in content of chromium than the base section. The element X contained in the base section is comprised of at least one of molybdenum, silicon, aluminum and lead.

Abstract: A spark plug for use in an internal combustion engine has a center electrode, an earth electrode, and an electrode chip formed on at least one of the center electrode and the earth electrode. A spark discharge gap is formed between the center electrode and the earth electrode. The electrode chip has a base section, a chromium rich layer formed on at least a part of the base section, and a diffusion layer formed between the base section and the chromium rich layer. The base section contains chromium within a range of 5 to 45 mass %, an element X within a range of 0.5 to 25 mass %, and a remainder composed of tungsten and unavoidable impurity. The chromium rich layer is larger in content of chromium than the base section. The element X contained in the base section is comprised of at least one of molybdenum, silicon, aluminum and lead.

Abstract: A spark plug has a center electrode and an earth electrode. The center electrode is faced to the earth electrode so that a spark discharging gap is formed between the center electrode and the earth electrode. An electrode chip is formed on at least one of the center electrode and the earth electrode. The electrode chip has a composition comprised of 40 to 60 mol % of aluminum and iridium as a remainder thereof. In the composition of the electrode chip, it is possible to replace part of the iridium with 1 to 20 mol % of at least one metal selected from nickel, iron, cobalt, platinum and rhodium.

Abstract: A plurality of memory cells connected with word lines in a row direction and connected with bit lines in a column direction are disposed in a matrix of rows and columns, and addresses are assigned to the memory cells to consecutively increase the address in the row direction in each row. The memory cells are positioned in a plurality of memory cell blocks respectively corresponding to a group of columns. A first specific word line is selected in one memory cell block or more of a high address side, and a second specific word line corresponding to an address group, which is higher than that of the first specific word line and is nearest to that of the first specific word line among those of the word lines, is selected in the remaining memory cell block or more of a low address side.

Abstract: A plurality of memory cells connected with word lines in a row direction and connected with bit lines in a column direction are disposed in a matrix of rows and columns, and addresses are assigned to the memory cells to consecutively increase the address in the row direction in each row. The memory cells are positioned in a plurality of memory cell blocks respectively corresponding to a group of columns. A first specific word line is selected in one memory cell block or more of a high address side, and a second specific word line corresponding to an address group, which is higher than that of the first specific word line and is nearest to that of the first specific word line among those of the word lines, is selected in the remaining memory cell block or more of a low address side.