Patents by Inventor Yoshinori Hatanaka
Yoshinori Hatanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8044476Abstract: A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.Type: GrantFiled: June 16, 2006Date of Patent: October 25, 2011Assignee: National University Corporation Shizuoka UniversityInventors: Yoshinori Hatanaka, Toru Aoki
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Patent number: 7402811Abstract: When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.Type: GrantFiled: October 20, 2004Date of Patent: July 22, 2008Assignee: National University Corporation Shizuoka UniversityInventors: Yoshinori Hatanaka, Toru Aoki, Yasuhiro Tomita
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Patent number: 7256738Abstract: A resonant circuit having a circuit coil formed on each surface of a dielectric film. Each coil has a line-width and an outer periphery in which the line-width of each circuit is 1/50 or more of the length of the outermost periphery of that circuit. Each coil has at least three complete turns, and the coils are provided on the faces of a dielectric film in such a manner that the coils are faced to each other.Type: GrantFiled: August 7, 2003Date of Patent: August 14, 2007Assignee: Kabushiki Kaisha MiyakeInventors: Shinya Uchibori, Takaaki Mizukawa, Yoshinori Hatanaka
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Publication number: 20070176200Abstract: There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.Type: ApplicationFiled: June 16, 2006Publication date: August 2, 2007Inventors: Yoshinori Hatanaka, Toru Aoki
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Publication number: 20070057190Abstract: When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.Type: ApplicationFiled: October 20, 2004Publication date: March 15, 2007Applicant: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITInventors: Yoshinori Hatanaka, Toru Aoki, Yasuhiro Tomita
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Patent number: 6936806Abstract: Disclosed is a photoelectric conversion device having a multiplying function and an image sensing device using the same. The photoelectric conversion device essentially comprises three layered structure: a carrier generation/multiplication layer composed of amorphous silicon to have both the function of absorbing light and generating carriers through optical excitation and the function of multiplying the generated carriers; an electron injection inhibiting layer composed of an amorphous silicon carbide of the p-type conductivity to inhibit injection of electrons into the carrier generation/multiplication layer; and a hole injection inhibiting layer composed of an amorphous silicon nitride of the n-type conductivity to inhibit injection of holes into the carrier generation/multiplication layer. The said carrier generation/multiplication layer is provided between said electron injection inhibiting layer and said hole injection inhibiting layer.Type: GrantFiled: November 3, 2000Date of Patent: August 30, 2005Assignee: Minolta Co., Ltd.Inventors: Ken Kitamura, Yoshinori Hatanaka
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Patent number: 6692794Abstract: This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.Type: GrantFiled: August 12, 2002Date of Patent: February 17, 2004Assignee: Murakami CorporationInventors: Masatoshi Nakamura, Yoshinori Hatanaka
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Publication number: 20040025324Abstract: A process for producing a resonant tag, wherein a metal foil having a thermal adhesion adhesive applied to at least one face thereof is stamped out into a circuit-like shape and is adhered to a base sheet, the process comprising: stamping out the metal foil into a predetermined shaped metal foil portion (4c) while being passed through a die roll (1) having thereon a stamping blade with a predetermined shape and a transfer roll (2) in contact with the die roll (1) which functions also as a die back-up roll; holding this metal foil portion obtained by the stamping-out operation onto the surface of the transfer roll by suction holes formed in the transfer roll; and thermally adhering the stamped metal foil portion to the base sheet (7) in contact with the transfer roll (2) at its another face by an adhesive roll (3) in contact with the transfer roll through the base sheet.Type: ApplicationFiled: August 7, 2003Publication date: February 12, 2004Applicant: Kabushiki Kaisha MiyakeInventors: Shinya Uchibori, Takaaki Mizukawa, Yoshinori Hatanaka
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Patent number: 6618939Abstract: A process for producing a resonant tag, wherein a metal foil having a thermal adhesion adhesive applied to at least one face thereof is stamped out into a circuit-like shape and is adhered to a base sheet, the process comprising: stamping out the metal foil into a predetermined shaped metal foil portion (4c) while being passed through a die roll (1) having thereon a stamping blade with a predetermined shape and a transfer roll (2) in contact with the die roll (1) which functions also as a die back-up roll; holding this metal foil portion obtained by the stamping-out operation onto the surface of the transfer roll by suction holes formed in the transfer roll; and thermally adhering the stamped metal foil portion to the base sheet (7) in contact with the transfer roll (2) at its another face by an adhesive roll (3) in contact with the transfer roll through the base sheet.Type: GrantFiled: September 15, 1999Date of Patent: September 16, 2003Assignee: Kabushiki Kaisha MiyakeInventors: Shinya Uchibori, Takaaki Mizukawa, Yoshinori Hatanaka
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Publication number: 20020192395Abstract: This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.Type: ApplicationFiled: August 12, 2002Publication date: December 19, 2002Inventors: Masatoshi Nakamura, Yoshinori Hatanaka
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Publication number: 20020171528Abstract: A process for producing a resonant tag, wherein a metal foil having a thermal adhesion adhesive applied to at least one face thereof is stamped out into a circuit-like shape and is adhered to a base sheet, the process comprising: stamping out the metal foil into a predetermined shaped metal foil portion (4c) while being passed through a die roll (1) having thereon a stamping blade with a predetermined shape and a transfer roll (2) in contact with the die roll (1) which functions also as a die back-up roll; holding this metal foil portion obtained by the stamping-out operation onto the surface of the transfer roll by suction holes formed in the transfer roll; and thermally adhering the stamped metal foil portion to the base sheet (7) in contact with the transfer roll (2) at its another face by an adhesive roll (3) in contact with the transfer roll through the base sheet.Type: ApplicationFiled: September 15, 1999Publication date: November 21, 2002Inventors: SHINYA UCHIBORI, TAKAAKI MIZUKAWA, YOSHINORI HATANAKA
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Patent number: 6472088Abstract: This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.Type: GrantFiled: August 27, 2001Date of Patent: October 29, 2002Assignee: Murakami CorporationInventors: Masatoshi Nakamura, Yoshinori Hatanaka
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Patent number: 6456639Abstract: The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power.Type: GrantFiled: May 24, 2001Date of Patent: September 24, 2002Assignee: Sony CorporationInventors: Akira Ishibashi, Yoshinori Hatanaka, Toru Aoki, Masaharu Nagai
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Patent number: 6414975Abstract: The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power.Type: GrantFiled: March 26, 1998Date of Patent: July 2, 2002Assignee: Sony CorporationInventors: Akira Ishibashi, Yoshinori Hatanaka, Toru Aoki, Masaharu Nagai
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Patent number: 6372304Abstract: A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.Type: GrantFiled: July 7, 1997Date of Patent: April 16, 2002Assignee: Suzuki Motor CorporationInventors: Keiichiro Sano, Masaya Nomura, Hiroaki Tamamaki, Yoshinori Hatanaka
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Publication number: 20020041967Abstract: This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.Type: ApplicationFiled: August 27, 2001Publication date: April 11, 2002Inventors: Masatoshi Nakamura, Yoshinori Hatanaka
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Publication number: 20010028666Abstract: The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power.Type: ApplicationFiled: May 24, 2001Publication date: October 11, 2001Applicant: Sony CorporationInventors: Akira Ishibashi, Yoshinori Hatanaka, Toru Aoki, Masaharu Nagai
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Patent number: 6294227Abstract: A method of forming a uniform-thickness good-quality protective film with scratch-proofness and ultraviolet cutting characteristic on a plastic part having a diversified and complex three-dimensional shape without wasteful release of an organic solvent, or the like, into the atmosphere. In a plasma chemical vapor deposition apparatus, the shape of at least one part of a surface of a cathode provided in a reaction chamber is made coincident with the shape of a surface of a plastic part such as a car headlamp lens, or the like. The plastic part is attached to the cathode in the condition that the two surfaces coincident in shape come into contact with each other. High-frequency electric power is supplied between the cathode and the reaction chamber while a hydrogen gas and hexamethyldisilane (HMDS) as a raw material gas for forming a protective film are imported into the reaction chamber. Thus, a protective film is formed on the surface of the plastic part by vapor deposition.Type: GrantFiled: June 9, 2000Date of Patent: September 25, 2001Assignee: Koito Manufacturing Co., Ltd.Inventors: Hidetaka Anma, Yoshinori Hatanaka
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Patent number: 5962083Abstract: A method of depositing a thin film on a polymer substrate by plasma CVD comprises applying a magnetic field to a plasma generating chamber by activating a magnetic coil placed in the circumference of the plasma generating chamber, the plasma generating chamber having an inlet; introducing a microwave into the plasma generating chamber; introducing an upstream gas into the plasma generating chamber wherein an ECR plasma is generated; vaporizing a feed gas wherein a supply gas is generated and carries the ECR plasma; passing said ECR plasma through a mesh provided between the inlet and a polymer substrate located downstream of the inlet; and depositing a film on the surface of the polymer substrate.Type: GrantFiled: June 13, 1996Date of Patent: October 5, 1999Assignee: Suzuki Motor CorporationInventors: Yoshinori Hatanaka, Yoichiro Nakanishi, Sunil Wickramanayaka, Keiichiro Sano, Masaya Nomura, Shigekazu Hayashi
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Patent number: 5587627Abstract: A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance.Type: GrantFiled: February 28, 1995Date of Patent: December 24, 1996Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Masato Saito, Ryo Suzuki, Keiji Fukuyama, Takuya Ohira, Keiji Watanabe, Minoru Kobayashi, Susumu Hoshinouchi, Yoshinori Hatanaka