Abstract: A complex dielectric film formed as an insulation film between oppositely facing conductors is made of an insulator and a non-insulator. The insulator and the non-insulator are formed to align in series in a serial model, to contain the non-insulator in the insulator in a serial-parallel model, and to align in parallel in a parallel mode 1. The insulator may be SiO.sub.2, Si.sub.3 N.sub.4, or other like material, and the non-insulator may be a metal, semi-metal, semiconductor containing conduction electrons, organic material containing conduction electrons, or other like material. The volume ratio of the non-insulator is chosen to an appropriate value in accordance with the designed value of the effective dielectric constant.

Abstract: A Faraday cup adapted for measuring the energy density of an electron beam which scans the cup and is of generally strip-shaped cross section, includes a substrate having a cavity in a surface thereof, a layer of electrically conductive material next adjacent to and conforming to the surface of the substrate, a layer of electrically isolating material having an aperture extending therethrough above the cavity and being substantially level and next adjacent to the layer of electrically conductive material except at margins of the aperture where the layer of electrically isolating material overhangs the cavity, and a metallic layer next adjacent to said layer of electrically isolating material and which has an opening aligned above said aperture and having a maximum dimension less than the width of the strip-shaped cross section of the beam at a location along the latter where the beam scans the cup.

Abstract: A Faraday cup adapted for measuring the energy density of an electron beam which scans the cup and is of generally strip-shaped cross-section, includes a substrate having a cavity in a surface thereof, a layer of electrically conductive material next adjacent to and conforming to the surface of the substrate, a layer of electrically isolating material having an aperture extending therethrough above the cavity and being substantially level and next adjacent to the layer of electrically conductive material except at margins of the aperture where the layer of electrically isolating material overhangs the cavity, and a metallic layer next adjacent to said layer of electrically isolating material and which has an opening aligned above said aperture and having a maximum dimension less than the width of the strip-shaped cross-section of the beam at a location along the latter where the beam scans the cup.

Abstract: For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, an electron beam of generally strip-shaped cross section is impacted on the polysilicon layer where the beam is focused into a fine impact line of intense energy extending transverse to the one direction in which the seeding locations are spaced apart, the substrate and electron beam are relatively displaced in a direction transverse to the impact line so that the impact line of the beam relatively scans at least a portion of the polysilicon layer transversely to the direction in which the seeding locations are spaced apart, and the speed with which the impact line relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the impact line of the el

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.

Abstract: For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, a beam of charged particles is impacted and focused on the polysilicon layer, the substrate and beam are relatively displaced so that the beam of charged particles scans at least a portion of the polysilicon layer in the direction in which the seeding locations are spaced apart, the speed with which the beam relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the area of impact thereon for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations, and charge buildup on the layer of silicon dioxide is avoided to prevent interference with focusing of the beam.

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. The desired cooling pattern is established by providing a thermal layer under the polycrystalline layer, which thermal layer is used to provide different rates of heat conduction therethrough in different parts of the thermal layer. A large, single-crystal device can be made by providing an operating layer of polycrystalline material in contact with the seed, melting the operating layer and recrystallizing it so that its solidification proceeds from the seed. The thermal layer can be used to ensure the desired direction of resolidification by providing different rates of heat conduction therethrough in different parts of the thermal layer.