Patents by Inventor Yoshinori Imai

Yoshinori Imai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10995933
    Abstract: An optical device includes: a first reflective surface disposed to reflect, to a substantially arc-shaped first region around a first axis, at least a portion of first light incident along the first axis and having a light distribution characteristic with an optical axis parallel to the first axis, the first reflective surface including a plurality of reflective arc surfaces separated in a direction along the first axis; a second reflective surface and a third reflective surface intersecting each other on the first axis and disposed such that the first reflective surface is located between the second reflective surface and the third reflective surface; and a light-transmissive emission surface adapted to refract at least a portion of light reflected by the plurality of reflective arc surfaces to emit the light around the first axis, the emission surface having periodic irregularities in a cross section in the direction along the first axis.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: May 4, 2021
    Assignee: NICHIA CORPORATION
    Inventors: Takanori Aruga, Hiroyuki Itahana, Wataru Kitahara, Yoshinori Momose, Masahiro Imai
  • Publication number: 20210117344
    Abstract: A control apparatus that accesses at least one I/O port of one or more I/O ports coupled to one or more control object apparatuses to control operation of a control object apparatus coupled to the I/O port includes a processor unit that executes a plurality of programs, and a storage unit that stores information on the one or more I/O ports and serves as a base of one or more shared areas each of the plurality of programs can access. The plurality of programs include one or more information programs in addition to one or more control programs. Each of the one or more control programs is a program that performs a scan process to output control information on the control object apparatus coupled to the I/O port. Each of the one or more information programs is a program that performs information processing different from scan operation.
    Type: Application
    Filed: August 23, 2018
    Publication date: April 22, 2021
    Inventors: Mitsuhiro IMAI, Fumiyuki TAMURA, Yoshinori MOCHIZUKI
  • Publication number: 20210047716
    Abstract: A steel sheet includes a hot-dip galvanized layer or a galvannealed layer on a surface of the steel sheet, the steel sheet including: in mass %, C: 0.06% or more and 0.22% or less; Si: 0.50% or more and 2.00% or less; Mn: 1.50% or more and 2.80% or less; Al: 0.02% or more and 1.00% or less; P: 0.001% or more and 0.100% or less; S: 0.0005% or more and 0.0100% or less; N: 0.0005% or more and 0.0100% or less; and a balance: Fe and impurities.
    Type: Application
    Filed: March 30, 2018
    Publication date: February 18, 2021
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Kohichi SANO, Hiroyuki KAWATA, Yuji YAMAGUCHI, Satoshi UCHIDA, Yoshinori IMAI, Riki OKAMOTO
  • Patent number: 9177799
    Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: November 3, 2015
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yoshinori Imai, Hideji Shibata, Takafumi Sasaki
  • Patent number: 8889533
    Abstract: A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: November 18, 2014
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takafumi Sasaki, Yoshinori Imai, Koei Kuribayashi, Sadao Nakashima
  • Patent number: 8580671
    Abstract: A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: November 12, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Sadayoshi Horii, Yoshinori Imai, Mika Karasawa
  • Patent number: 8450220
    Abstract: There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: May 28, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takafumi Sasaki, Sadao Nakashima, Yoshinori Imai, Koei Kuribayashi
  • Patent number: 8415237
    Abstract: A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the sol
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: April 9, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Sadayoshi Horii, Yoshinori Imai
  • Patent number: 8409352
    Abstract: An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: April 2, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Koei Kuribayashi, Yoshinori Imai, Sadao Nakashima, Takafumi Sasaki
  • Publication number: 20120322254
    Abstract: A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
    Type: Application
    Filed: May 1, 2012
    Publication date: December 20, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi HORII, Yoshinori IMAI, Mika YAMAGUCHI
  • Publication number: 20120315767
    Abstract: A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
    Type: Application
    Filed: February 22, 2011
    Publication date: December 13, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi Sasaki, Yoshinori Imai, Koei Kuribayashi, Sadao Nakashima
  • Publication number: 20120214317
    Abstract: A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.
    Type: Application
    Filed: February 17, 2012
    Publication date: August 23, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Masaki Murobayashi, Takatomo Yamaguchi, Kenji Shirako, Shuhei Saido, Akihiro Sato, Yoshinori Imai
  • Publication number: 20120156886
    Abstract: Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 21, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kenji Shirako, Masanao Fukuda, Takafumi Sasaki, Yoshinori Imai, Daisuke Hara, Shuhei Saido, Koei Kuribayashi
  • Patent number: 8193083
    Abstract: A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: June 5, 2012
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Sadayoshi Horii, Yoshinori Imai, Mika Karasawa
  • Publication number: 20110300695
    Abstract: A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the sol
    Type: Application
    Filed: August 19, 2011
    Publication date: December 8, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi HORII, Yoshinori Imai
  • Patent number: 8026159
    Abstract: A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flown to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solv
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: September 27, 2011
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Sadayoshi Horii, Yoshinori Imai
  • Publication number: 20110212599
    Abstract: Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, a
    Type: Application
    Filed: February 28, 2011
    Publication date: September 1, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Koei Kuribayashi, Yoshinori Imai, Sadao Nakashima, Takafumi Sasaki
  • Publication number: 20100330781
    Abstract: There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.
    Type: Application
    Filed: June 28, 2010
    Publication date: December 30, 2010
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Takafumi SASAKI, Sadao NAKASHIMA, Yoshinori IMAI, Koei KURIBAYASHI
  • Publication number: 20100297832
    Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
    Type: Application
    Filed: May 18, 2010
    Publication date: November 25, 2010
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Yoshinori IMAI, Hideji SHIBATA, Takafumi SASAKI
  • Publication number: 20090064931
    Abstract: A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
    Type: Application
    Filed: September 4, 2008
    Publication date: March 12, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Sadayoshi Horii, Yoshinori Imai, Mika Yamaguchi