Patents by Inventor Yoshinori Ishiai

Yoshinori Ishiai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9356424
    Abstract: There is provided a semiconductor light emitting element that is excellent in reliability and is capable of being driven by a lower voltage and a semiconductor light emitting device that includes the semiconductor light emitting element. The semiconductor light emitting element includes: a semiconductor layer; an electrode layer; a metal layer that contains a hydrogen storage metal; and a plated layer in order.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: May 31, 2016
    Assignee: SONY CORPORATION
    Inventors: Masahiro Murayama, Yoshinori Ishiai, Yuichiro Kikuchi
  • Publication number: 20150023379
    Abstract: There is provided a semiconductor light emitting element that is excellent in reliability and is capable of being driven by a lower voltage and a semiconductor light emitting device that includes the semiconductor light emitting element. The semiconductor light emitting element includes: a semiconductor layer; an electrode layer; a metal layer that contains a hydrogen storage metal; and a plated layer in order.
    Type: Application
    Filed: July 10, 2014
    Publication date: January 22, 2015
    Inventors: Masahiro Murayama, Yoshinori Ishiai, Yuichiro Kikuchi
  • Patent number: 6096587
    Abstract: A manufacturing method of a junction field effect transistor, promising a low ON resistance, high maximum drain current and linearity with a high transmission gain and also enabling the gate length to be reduced, makes a channel layer by sequentially epitaxially growing an undoped GaAs layer, n.sup.+ -type GaAs layer and n-type GaAs layer on a semi-insulating GaAs substrate via a GaAs buffer layer. Through an opening formed in a diffusion mask in form of a SiN.sub.x film on the n-type GaAs layer, Zn is diffused into the n-type GaAs layer to form a p.sup.+ -type gate region. From above the diffusion mask, a gate metal layer is deposited, and patterned to make a gate electrode in the opening of the diffusion mask in self-alignment with the p.sup.+ -type gate region.
    Type: Grant
    Filed: September 17, 1999
    Date of Patent: August 1, 2000
    Assignee: Sony Corporation
    Inventors: Tsutomu Imoto, Yoshinori Ishiai, Mikio Kamada
  • Patent number: 4609048
    Abstract: An automatic fire extinguishing apparatus including a fire sensor, a swivel chamber and an expansible hollow rod secured to the chamber. When a fire is detected by the fire sensor, the swivel chamber is rotated about a vertical axis in accordance with the output of the fire sensor until the rod is directed to the fire source. Then a pressurized fire extinguishing agent contained in a bomb is introduced into the rod through the chamber to expand the rod toward the fire source. The expansion of the rod is stopped when the end of the rod is adjacent the fire source and the free end of the rod is opened, so that the fire extinguishing agent is discharged toward the fire source.
    Type: Grant
    Filed: April 18, 1984
    Date of Patent: September 2, 1986
    Assignees: Shinko Electric Co., Ltd., Secom Co., Ltd.
    Inventors: Susumu Yasaki, Yoshinori Ishiai, Susumu Mitsushima, Takashi Nakamura