Patents by Inventor Yoshinori Ishii
Yoshinori Ishii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961771Abstract: There is provided a laminated sheet with which the electrical inspection of a redistribution layer formed later can be efficiently performed, while the laminated sheet is in the form of a sheet useful for the formation of a redistribution layer. This laminated sheet includes a carrier with a release function; a first electrically conductive film provided on the carrier with the release function; an insulating film provided on the first electrically conductive film; and a second electrically conductive film provided on the insulating film. The second electrically conductive film is used for formation of a redistribution layer, and the first electrically conductive film, the insulating film, and the second electrically conductive film function as a capacitor for performing electrical inspection of the redistribution layer.Type: GrantFiled: June 16, 2021Date of Patent: April 16, 2024Assignee: MITSUI MINING & SMELTING CO., LTD.Inventors: Yoshinori Matsuura, Takenori Yanai, Rintaro Ishii
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Publication number: 20240030226Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: October 4, 2023Publication date: January 25, 2024Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Patent number: 11810921Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: November 9, 2022Date of Patent: November 7, 2023Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Publication number: 20230081420Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: November 9, 2022Publication date: March 16, 2023Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Patent number: 11521990Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: June 2, 2021Date of Patent: December 6, 2022Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Publication number: 20210288078Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: June 2, 2021Publication date: September 16, 2021Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Patent number: 11056514Abstract: Separation of wirings formed on an organic passivation film is prevented in an organic EL display device or a liquid crystal display device. The organic EL display device includes a TFT formed on a substrate and an organic passivation film formed to cover the TFT. An intermediate film containing SiO or SiN is formed to cover the organic passivation film. An insulation film formed with an organic material is formed on the intermediate film. A reflective electrode is formed on the intermediate film. The reflective electrode is connected to the TFT via a through-hole formed in the organic passivation film and a through-hole formed in the intermediate film.Type: GrantFiled: July 26, 2017Date of Patent: July 6, 2021Assignee: Japan Display Inc.Inventors: Yoshinori Ishii, Kazufumi Watabe, Hidekazu Miyake
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Patent number: 11049882Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: January 15, 2020Date of Patent: June 29, 2021Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Patent number: 10833134Abstract: An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.Type: GrantFiled: December 16, 2019Date of Patent: November 10, 2020Assignee: Japan Display Inc.Inventors: Hidekazu Miyake, Kazufumi Watabe, Yoshinori Ishii
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Publication number: 20200152668Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: January 15, 2020Publication date: May 14, 2020Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Publication number: 20200119103Abstract: An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.Type: ApplicationFiled: December 16, 2019Publication date: April 16, 2020Inventors: Hidekazu MIYAKE, Kazufumi WATABE, Yoshinori ISHII
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Patent number: 10573666Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: June 19, 2018Date of Patent: February 25, 2020Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Patent number: 10541278Abstract: The organic EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and a pixel having an anode, an organic EL layer, and a cathode is formed on a region enclosed with the scanning line and the video signal line. A first detection electrode extends in the first direction above the pixel via insulation films. A counter substrate is disposed while covering the first detection electrode via an adhesive. A second detection electrode extends in the second direction at the outer side of the counter substrate.Type: GrantFiled: July 26, 2017Date of Patent: January 21, 2020Assignee: Japan Display Inc.Inventors: Hidekazu Miyake, Kazufumi Watabe, Yoshinori Ishii
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Publication number: 20190305249Abstract: A sealing substrate is arranged to oppositely face an element substrate on which organic EL layers are formed in a matrix array with a sealing material sandwiched therebetween. A gel-state desiccant is filled in an inner space surrounded by the element substrate, the sealing substrate and the sealing material. Since the gel-state desiccant is in a gel state, the gel-state desiccant is flexibly filled in the inner space of the organic EL display device thus completely eliminating a gap. Since the inner space is filled with the gel-state desiccant, moisture hardly intrudes into the inner space from the outside and, at the same time, a mechanical strength of the organic EL display device is also enhanced.Type: ApplicationFiled: June 17, 2019Publication date: October 3, 2019Inventors: Satoru Kase, Yoshinori Ishii, Eiji Matsuzaki
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Patent number: 10403652Abstract: An organic EL display device has a semiconductor circuit substrate comprising a TFT and an organic passivation layer thereon. An AlO layer is formed over the organic passivation layer, and an electrode layer is formed on the AlO layer. The electrode layer connects with TFT via a through hole formed in the AlO layer and in the organic passivation layer.Type: GrantFiled: July 27, 2017Date of Patent: September 3, 2019Assignee: Japan Display Inc.Inventors: Yoshinori Ishii, Kazufumi Watabe, Hidekazu Miyake
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Patent number: 10396304Abstract: The invention provides an organic EL display device that, even if bent, is not prone to plastic deformation and has improved moisture blocking characteristics. An organic EL display device includes: a glass substrate; an organic EL layer formed on an upper side of the glass substrate; and a support substrate glued on a lower side of the glass substrate via a first adhesive. Recessed portions or projecting portions are formed on the glass substrate at a side thereof facing the support substrate. The recessed portions or a space between each of the projecting portions is filled with the first adhesive.Type: GrantFiled: May 16, 2017Date of Patent: August 27, 2019Assignee: Japan Display Inc.Inventors: Kazufumi Watabe, Yoshinori Ishii
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Patent number: 10326104Abstract: A sealing substrate is arranged to oppositely face an element substrate on which organic EL layers are formed in a matrix array with a sealing material sandwiched therebetween. A gel-state desiccant is filled in an inner space surrounded by the element substrate, the sealing substrate and the sealing material. Since the gel-state desiccant is in a gel state, the gel-state desiccant is flexibly filled in the inner space of the organic EL display device thus completely eliminating a gap. Since the inner space is filled with the gel-state desiccant, moisture hardly intrudes into the inner space from the outside and, at the same time, a mechanical strength of the organic EL display device is also enhanced.Type: GrantFiled: May 2, 2018Date of Patent: June 18, 2019Assignee: Samsung Display Co., Ltd.Inventors: Satoru Kase, Yoshinori Ishii, Eiji Matsuzaki
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Patent number: 10199591Abstract: An organic EL display device has a TFT formed on the substrate, and an organic EL layer formed on the TFT. A protective layer is formed on the organic EL layer, and a first barrier layer which contains AlOx is formed between the substrate and the TFT.Type: GrantFiled: April 3, 2017Date of Patent: February 5, 2019Assignee: Japan Display Inc.Inventors: Yoshinori Ishii, Kazufumi Watabe, Isao Suzumura
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Publication number: 20180308869Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: June 19, 2018Publication date: October 25, 2018Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Patent number: 10026754Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: May 3, 2017Date of Patent: July 17, 2018Assignee: Japan Dispaly Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi