Abstract: Provided is a liquid ejection apparatus, liquid ejection method, dispensing apparatus, and compound introduction apparatus capable of inhibiting contamination of a liquid after being ejected. The liquid ejection apparatus has an ejection unit having an ejection part and an ejection energy generation element that ejects a liquid from the ejection part by using a principle of inkjet ejection into an internal space in a storage part capable of storing the ejected liquid. When ejecting the liquid, the ejection unit covers an opening portion of the storage part to thereby screen the internal space in the storage part from an external space.

Abstract: An object of the present invention is to provide a bonded substrate which is excellent in temperature characteristics and suppresses unnecessary response due to reflection of an elastic wave at a bonding interface. [Means to Solve the Problems] The present invention is unique in that a bonded substrate is constructed by bonding a LiTaO3 substrate and a base plate wherein a Li concentration at a base plate-bonding face of the LiTaO3 substrate is higher than that at a LiTaO3 substrate-side end face of the bonded substrate, that the difference between the Li concentration at the base plate-bonding face of the LiTaO3 substrate and the Li concentration at the LiTaO3 substrate-side end face of the bonded substrate is 0.1 mol % or greater, that the Li concentration at the base plate-bonding face of the LiTaO3 substrate satisfies an equation Li/(Li+Ta)×100=(50+?) mol %, where ? is in the range of ?1.2<?<0.

Abstract: [Object] It is an object of the present invention to provide a lithium tantalate single crystal substrate which undergoes only small warpage, is free from cracks and scratches, has better temperature non-dependence characteristics and a larger electromechanical coupling coefficient than a conventional Y-cut LiTaO3 substrate.

Abstract: A lithium tantalate single crystal substrate for a surface acoustic wave device that is a rotated Y-cut LiTaO3 substrate whose crystal orientation has a Y-cut angle of not smaller than 36° and not larger than 49° and which has such a Li concentration profile after diffusion of Li into the substrate from the surface thereof that the Li concentration at the surface of the substrate differs from that inside the substrate. A shear vertical type elastic wave whose main components are vibrations in the thickness direction and in the propagation direction and which is among those elastic waves which propagate in the X axis direction within the surface of this LiTaO3 substrate has an acoustic velocity of not lower than 3140 m/s and not higher than 3200 m/s.

Abstract: [Object] An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface. [Means to solve the Problems] In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

Abstract: [Object] An object of the present invention is to provide a bonded substrate which is excellent in temperature characteristics and suppresses unnecessary response due to reflection of an elastic wave at a bonding interface. [Means to Solve the Problems] The present invention is unique in that a bonded substrate is constructed by bonding a LiTaO3 substrate and a base plate wherein a Li concentration at a base plate-bonding face of the LiTaO3 substrate is higher than that at a LiTaO3 substrate-side end face of the bonded substrate, that the difference between the Li concentration at the base plate-bonding face of the LiTaO3 substrate and the Li concentration at the LiTaO3 substrate-side end face of the bonded substrate is 0.1 mol % or greater, that the Li concentration at the base plate-bonding face of the LiTaO3 substrate satisfies an equation Li/(Li+Ta)×100=(50+?) mol %, where ? is in the range of ?1.2<?<0.

Abstract: [Object] It is an object of the present invention to provide a lithium tantalate single crystal substrate which undergoes only small warpage, is free from cracks and scratches, has better temperature non-dependence characteristics and a larger electromechanical coupling coefficient than a conventional Y-cut LiTaO3 substrate.

Abstract: The lithium tantalate single crystal substrate is a rotated Y-cut LiTaO3 single crystal substrate having a crystal orientation of 36° Y-49° Y cut characterized in that: the substrate is diffused with Li from its surface into its depth such that it has a Li concentration profile showing a difference in the Li concentration between the substrate surface and the depth of the substrate; and the substrate is treated with single polarization treatment so that the Li concentration is substantially uniform from the substrate surface to a depth which is equivalent to 5-15 times the wavelength of either a surface acoustic wave or a leaky surface acoustic wave propagating in the LiTaO3 substrate surface.

Abstract: A lithium tantalate single crystal substrate for a surface acoustic wave device that is a rotated Y-cut LiTaO3 substrate whose crystal orientation has a Y-cut angle of not smaller than 36° and not larger than 49° and which has such a Li concentration profile after diffusion of Li into the substrate from the surface thereof that the Li concentration at the surface of the substrate differs from that inside the substrate. A shear vertical type elastic wave whose main components are vibrations in the thickness direction and in the propagation direction and which is among those elastic waves which propagate in the X axis direction within the surface of this LiTaO3 substrate has an acoustic velocity of not lower than 3140 m/s and not higher than 3200 m/s.

Abstract: [Object] An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface. [Means to solve the Problems] In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

Abstract: There is disclosed a piezoelectric single crystal wafer wherein an etching pit density on the front surface of the wafer on which an electrode for transmit-receive of surface acoustic wave or leaky surface acoustic wave is formed is 7.8×104/mm2 or less, and a piezoelectric single crystal wafer wherein surface roughness Ra on the peripheral surface other than the front surface and the reverse surface of the wafer is 2.3 &mgr;m or less. There can be provided a piezoelectric single crystal wafer wherein a deviation of surface acoustic wave velocity or leaky surface acoustic wave velocity is small, namely the uniformity of the velocity is excellent, and fine contaminations adhered on the surface where electrode is formed and breakage of the wafer can be significantly reduced, and therefore a device such as a filter having excellent property can be produced in high yield.

Abstract: A piezoelectric oxide single crystal wafer, wherein number of particles adhering to a surface of the wafer and having a size of 1 &mgr;m or more is 85 or less per mm2. The piezoelectric oxide single crystal wafer consists of any one of lithium tantalate, lithium niobate, quartz crystal, lithium tetraborate and langasite, and suitably used for production of surface acoustic wave filters. The piezoelectric oxide single crystal wafer of the present invention enables fine electrode formation and device production with good yield.

Abstract: A radiant ray-detector having a high resolving ability and capable of being easily produced as well as a method for producing the same are herein disclosed. The radiant ray-detector comprises a plurality of photomultiplier tubes 11 combined together and scintillator chips 1, wherein the scintillator chips 1 each is in the form of a hexahedron, more than one face thereof is mirror finished, the other faces are surface-toughened and a number of these scintillator chips 1 greater than the number of the photomultiplier tubes 11 are joined together so that the overall area of the resulting mirror surface of a group of scintillator chips 1 is approximately identical to the area of an entrance window 12 of each corresponding photomultiplier tube 11 and wherein different transmittances are imparted to individual coarse faces 4 of the scintillator chip 1 joined to those of other scintillator chips.