Abstract: A combustor of the present disclosure includes: a mixing portion which is provided with a plurality of mixing passages passing through the mixing portion so as to be extended from an upstream end surface to a downstream end surface of the mixing portion intersecting an axis of the combustor, air being introduced to the plurality of the mixing passages from the upstream end surface of the mixing portion; and a fuel supply portion which is configured to supply the air introduced to the mixing passages with fuel to generate mixed fluid, wherein flow paths of the mixing passages have different pressure loss coefficients so that the differences in the flow velocity of the mixed fluid flowing through the mixing passages at the downstream end surface of the mixing portion are greater than those of a case where the mixing passages have the same flow path shape.

Abstract: A hydrogen content fuel can be stably ignited using a gaseous fuel that does not contain hydrogen and dispersibility of the hydrogen content fuel is enhanced. A gas turbine combustor including a burner including: a startup fuel pipe in which a startup fuel circulates; a first main fuel pipe in which a main fuel circulates, a second main fuel pipe in which the main fuel circulates; a fuel mixer to which the startup fuel pipe and the first main fuel pipe are connected; an inner fuel nozzle to which the fuel mixer is connected; a plurality of outer fuel nozzles to which the second main fuel pipe is connected; a startup fuel control valve provided in the startup fuel pipe; a first fuel control valve provided in the first main fuel pipe; and a second fuel control valve provided in the second main fuel pipe.

Abstract: A liquefied natural gas compression system includes: a first gas turbine that drives a rotary machine; a first steam boiler including a first heat recovery steam generator that recovers heat from exhaust gas from the first gas turbine; a first steam turbine that drives a first refrigerant compressor; a common header steam line through which steam from the first steam boiler flows to an inlet of the first steam turbine; an auxiliary steam line; and a letdown valve that connects the common header steam line to the auxiliary steam line and that opens in response to pressure of the common header steam line exceeding a predetermined threshold value.

Abstract: A liquefied natural gas compression system includes: a first gas turbine that drives a rotary machine; a first steam boiler including a first heat recovery steam generator that recovers heat from exhaust gas from the first gas turbine; a first steam turbine that drives a first refrigerant compressor; a common header steam line through which steam from the first steam boiler flows to an inlet of the first steam turbine; an auxiliary steam line; and a letdown valve that connects the common header steam line to the auxiliary steam line and that opens in response to pressure of the common header steam line exceeding a predetermined threshold value.

Abstract: A hydrogen content fuel can be stably ignited using a gaseous fuel that does not contain hydrogen and dispersibility of the hydrogen content fuel is enhanced. A gas turbine combustor including a burner including: a startup fuel pipe in which a startup fuel circulates; a first main fuel pipe in which a main fuel circulates, a second main fuel pipe in which the main fuel circulates; a fuel mixer to which the startup fuel pipe and the first main fuel pipe are connected; an inner fuel nozzle to which the fuel mixer is connected; a plurality of outer fuel nozzles to which the second main fuel pipe is connected; a startup fuel control valve provided in the startup fuel pipe; a first fuel control valve provided in the first main fuel pipe; and a second fuel control valve provided in the second main fuel pipe.

Abstract: The present invention provides a gas turbine combustor which reduces NOx emissions for a hydrogen-containing fuel, is improved in reliability and realizes stable operation. The gas turbine combustor of the present invention includes a combustion chamber which burns a fuel and air, an air hole plate which is located on an upstream side of the combustion chamber and has air holes which are concentrically arranged plurally in line and plurally in number, and fuel nozzles which are arranged plurally in line and plurally in number, and a fuel nozzle inner wall has a fuel nozzle tapered shape which extends in an outer circumferential direction on a leading end part of the fuel nozzle.

Abstract: A gas turbine combustor having a burner including a plurality of fuel nozzles for injecting fuel, air hole plates positioned on a downstream side of the fuel nozzles and a plurality of air holes arranged in pairs with each of the fuel nozzles, and a combustion chamber for mixing fuel injected from the fuel nozzles and air injected from the air holes and injecting and burning the mixed fuel. Each of the fuel nozzles configuring the burners is provided with a projection in which a part of an outer edge of a section of the fuel nozzle is protruded outward; and the projection is arranged so as to be directed toward a center of the gas turbine combustor. The projection of the fuel nozzle is positioned on a downstream side of a flow of combustion air flowing around each of the fuel nozzles.

Abstract: A gas turbine combustor having a burner including a plurality of fuel nozzles for injecting fuel, air hole plates positioned on a downstream side of the fuel nozzles and a plurality of air holes arranged in pairs with each of the fuel nozzles, and a combustion chamber for mixing fuel injected from the fuel nozzles and air injected from the air holes and injecting and burning the mixed fuel. Each of the fuel nozzles configuring the burners is provided with a projection in which a part of an outer edge of a section of the fuel nozzle is protruded outward; and the projection is arranged so as to be directed toward a center of the gas turbine combustor. The projection of the fuel nozzle is positioned on a downstream side of a flow of combustion air flowing around each of the fuel nozzles.

Abstract: A semiconductor device includes a first layer, a plurality of first test elements which are arranged in the first layer, a second layer which is different from the first layer and has a first surface and a second surface opposed to the first surface, the first surface of the second layer being adhered to the first layer, an opening portion which is arranged on the second surface of the second layer, and a plurality of pads which are arranged in the second layer and are electrically connected to the first test elements, a part of the pads being exposed from the opening portion.

Abstract: A semiconductor device manufacturing method includes forming a first layer and a second layer being different from the first layer, the first layer having a plurality of first test elements, the second layer having a plurality of pads, and adhering the first and second layers to electrically connect the first test elements to the pads.

Abstract: A semiconductor device in which a plurality of rows are set along an X direction and a plurality of columns are set along a Y direction orthogonal to the X direction, comprises a first element region including a first trench disposed in a first column at one end thereof and a second trench disposed in a second column parallel to the first column at the other end thereof; a second element region including a third trench disposed at a position closer to the second trench than the first trench in the first column at one end thereof and a fourth trench disposed in the second column at the other end thereof; and a third element region including a fifth trench disposed at a position closer to the fourth trench than the third trench in the first column at one end thereof and a sixth trench disposed in the second column at the other end thereof.

Abstract: A semiconductor memory device includes first and second semiconductor layers, a buried insulating layer, a trench comprising a retreated portion, and the trench defining a first opening width at the second semiconductor layer, a first capacitor electrode formed in the first semiconductor layer, a capacitor insulating film formed in the trench, a second capacitor electrode formed in the trench in the first semiconductor layer, an insulating film formed on a side surface of the retreated portion and defining second and third opening widths, the second opening width serving as a width at the buried insulating layer and being not more than the first opening width, and the third opening width serving as a width at a boundary portion between the buried insulating layer and first semiconductor layer, and a connection portion electrically connected to the second capacitor electrode.

Abstract: A semiconductor device in which a plurality of rows are set along an X direction and a plurality of columns are set along a Y direction orthogonal to the X direction, comprises a first element region including a first trench disposed in a first column at one end thereof and a second trench disposed in a second column parallel to the first column at the other end thereof; a second element region including a third trench disposed at a position closer to the second trench than the first trench in the first column at one end thereof and a fourth trench disposed in the second column at the other end thereof; and a third element region including a fifth trench disposed at a position closer to the fourth trench than the third trench in the first column at one end thereof and a sixth trench disposed in the second column at the other end thereof.

Abstract: A semiconductor memory device includes first and second semiconductor layers, a buried insulating layer, a trench comprising a retreated portion, and the trench defining a first opening width at the second semiconductor layer, a first capacitor electrode formed in the first semiconductor layer, a capacitor insulating film formed in the trench, a second capacitor electrode formed in the trench in the first semiconductor layer, an insulating film formed on a side surface of the retreated portion and defining second and third opening widths, the second opening width serving as a width at the buried insulating layer and being not more than the first opening width, and the third opening width serving as a width at a boundary portion between the buried insulating layer and first semiconductor layer, and a connection portion electrically connected to the second capacitor electrode.

Abstract: A semiconductor device includes the first layer, a plurality of first test elements which are arranged in the first layer, the second layer which is adhered to the first layer and is different from the first layer, and a plurality of pads which are arranged in the second layer and electrically connected to the first test elements.

Abstract: A semiconductor memory device includes first and second semiconductor layers, a buried insulating layer, a trench comprising a retreated portion, and the trench defining a first opening width at the second semiconductor layer, a first capacitor electrode formed in the first semiconductor layer, a capacitor insulating film formed in the trench, a second capacitor electrode formed in the trench in the first semiconductor layer, an insulating film formed on a side surface of the retreated portion and defining second and third opening widths, the second opening width serving as a width at the buried insulating layer and being not more than the first opening width, and the third opening width serving as a width at a boundary portion between the buried insulating layer and first semiconductor layer, and a connection portion electrically connected to the second capacitor electrode.

Abstract: A semiconductor memory device includes first and second semiconductor layers, a buried insulating layer, a trench comprising a retreated portion, and the trench defining a first opening width at the second semiconductor layer, a first capacitor electrode formed in the first semiconductor layer, a capacitor insulating film formed in the trench, a second capacitor electrode formed in the trench in the first semiconductor layer, an insulating film formed on a side surface of the retreated portion and defining second and third opening widths, the second opening width serving as a width at the buried insulating layer and being not more than the first opening width, and the third opening width serving as a width at a boundary portion between the buried insulating layer and first semiconductor layer, and a connection portion electrically connected to the second capacitor electrode.