Abstract: The AGC threshold of electric intensity level is set by the signal processor portion 107 in response to the measured result of the error rate measuring circuit 109 that measures the error rate of the received signal, and the gain control operation of the gain control circuit 106 is caused to start when the electric field intensity detected by the field intensity detector 105 reaches the threshold of electric intensity level. Accordingly, the optimum AGC threshold of electric intensity level can be set to meet the radio wave situation in which the radio receiver, i.e., the receiving situation of the received signal and also the gain control of the gain controlling means can be achieved to optimize the signal quality of the received signal in the situation of either the IM characteristic or the electric field variation characteristic, e.g., under the environment of the strong electric field IM or the environment in which the electric field is changed strongly.

Abstract: A signal processing unit 107 outputs a control parameter of a gain control operation-starting electric field strength value in the form of a signal CN1 in correspondence with data of transfer speed/number of FM level by referring to a memory 108. Then, this signal processing unit 107 controls setting of an Received Signal Strength Indicator 105. When an electric field strength of a signal reaches an operation-starting electric field strength value, the Received Signal Strength Indicator (RSSI) 105 changes a voltage of an output GC1 based upon the control parameter (signal CN1). A gain control circuit 106 changes a gain control amount in response to the output signal GC1 derived from the Received Signal Strength Indicator 105. As a consequence, the operation-starting electric field strength value of the AGC operation can be set under optimum condition in correspondence with the sort of signal.

Abstract: A semiconductor device is provided which is capable of improving the productivity, the reliably, and the shielding of exposed parts such as leads or others and preventing chipping.

Abstract: There is provided a tape carrier in which the degree of freedom of a fine wiring pattern is enhanced by reducing the diameter of a via pad so that the pitch of the wiring pattern can be made fine, and a metallic ball can be positively joined to the via pad even if the diameter of the metallic ball is extended to as large as possible. A tape carrier comprises: a metallic wiring 3 formed on one side of a tape base material 1 through an adhesive layer 2; and a plurality of via holes 4 formed on the other side of the tape base material 1, via pads 3b of the metallic wiring 3 being exposed to the plurality of via holes 4, wherein internal wall surfaces of the via holes, which have been formed by punching the tape material 5, on one side of which the adhesive layer 2 is formed, are subjected to coining-press from the other side of the tape base material 1, so that the via holes 4 are formed into tapered holes 7, the diameters of the opening portions 6 of which are extended.

Abstract: A semiconductor device is provided which is capable of improving the productivity, the reliably, and the shielding of exposed parts such as leads or others and preventing chipping.

Abstract: A printed circuit board with an electronic component and a wiring pattern is fixed in a casing. A static electricity removing member is provided at an edge of the printed circuit board adjacent to an inlet of the casing through which static electricity inters into the casing. Preferably, the static electricity removing member is a throughhole-like or semi-circular conductive member with opposed sharp edges electrically connected to a ground terminal via a resistor or a low-pass filter.