Patents by Inventor Yoshinori Miyamura
Yoshinori Miyamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7159303Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: March 9, 2006Date of Patent: January 9, 2007Assignee: Hitachi Global Storage Technologies, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20060152862Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: March 9, 2006Publication date: July 13, 2006Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 7054120Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: November 5, 2003Date of Patent: May 30, 2006Assignee: Hitachi Global Storage Technologies Japan, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20040090850Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: November 5, 2003Publication date: May 13, 2004Applicant: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 6687099Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: October 15, 2002Date of Patent: February 3, 2004Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20030117750Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: October 15, 2002Publication date: June 26, 2003Applicant: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 6483677Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: August 20, 2001Date of Patent: November 19, 2002Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20020018325Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: ApplicationFiled: August 20, 2001Publication date: February 14, 2002Applicant: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 6323415Abstract: A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements.Type: GrantFiled: September 17, 1999Date of Patent: November 27, 2001Assignee: Hitachi, Ltd.Inventors: Tsuyoshi Uematsu, Terunori Warabisako, Yoshiaki Yazawa, Yoshinori Miyamura, Ken Tsutsui, Shin-ichi Muramatsu, Hiroyuki Ohtsuka, Junko Minemura
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Patent number: 6294723Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like.Type: GrantFiled: February 23, 1999Date of Patent: September 25, 2001Assignee: Hitachi, Ltd.Inventors: Tsuyoshi Uematsu, Terunori Warabisako, Yoshiaki Yazawa, Yoshinori Miyamura, Ken Tsutsui, Shin-ichi Muramatsu, Hiroyuki Ohtsuka, Junko Minemura
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Patent number: 6278593Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: December 21, 1999Date of Patent: August 21, 2001Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Publication number: 20010008144Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors each being in contact with one of the concentrators, which is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not perpendicularly but obliquely from the right, upper side, for example, in the case where the module is established in contact with a curved plane of a roof or the like.Type: ApplicationFiled: February 23, 1999Publication date: July 19, 2001Inventors: TSUYOSHI UEMATSU, TERUNORI WARABISAKO, YOSHIAKI YAZAWA, YOSHINORI MIYAMURA, KEN TSUTSUI, SHIN-ICHI MURAMATSU, HIROYUKI OHTSUKA, JUNKO MINEMURA
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Patent number: 6011674Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: April 2, 1996Date of Patent: January 4, 2000Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 5814400Abstract: A magneto-optical recording medium comprises in combination: a magneto-optical recording layer capable of writing or erasing information by a laser beam and an external magnetic field and of reading the information by a Kerr effect; and a substrate having the magneto-optical recording layer formed thereon. The magneto-optical recording layer has at least two layers, including a first magneto-optical recording layer and a second magneto-optical recording layer which are magnetically coupled together. The first magneto-optical recording layer is a layer providing a greater magneto-optical effect in a short light wavelength range than the second magneto-optical recording layer though that having less perpendicular magnetic energy than this, as is provided on an irradiation side of the laser beam. It provides advantages in both the magneto-optical effect and perpendicular anisotropy in consideration of the thicknesses or compositions of the first and second magneto-optical recording layers.Type: GrantFiled: May 20, 1991Date of Patent: September 29, 1998Assignees: Hitachi, Ltd., Hitachi Maxell, Ltd.Inventors: Fumiyoshi Kirino, Yoshinori Miyamura, Junko Nakamura, Norio Ohta, Masahiko Takahashi, Ryo Suzuki
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Patent number: 5766718Abstract: It is disclosed that a longitudinal magnetic recording medium and apparatus has recording sections having longitudinal magnetic films magnetically isolated in a recording direction. The magnetically isolated recording sections can record a single bit each so that the longitudinal magnetic recording medium can remove the irregular domain boundary of its own caused on boundaries of magnetization reversals in the recording direction. This can improve the signal-to-media noise ratio to a great extent in writing and reading.Type: GrantFiled: January 31, 1994Date of Patent: June 16, 1998Assignee: Hitachi, Ltd.Inventors: Yoshibumi Matsuda, Masaaki Futamoto, Fumio Kugiya, Yoshinori Miyamura, Takeshi Nakano, Hisashi Takano, Kyo Akagi, Mikio Suzuki, Yasuhide Ouchi
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Patent number: 5736235Abstract: A magnetic recording medium, its fabrication method, and a magnetic recording apparatus in which both saturation induction and coercive force of a magnetic film is made high as they are near a surface of the recording medium. A high density information recording can be made higher than 50 kFCI in linear recording density even for spacing around 0.2 .mu.m.Type: GrantFiled: August 6, 1991Date of Patent: April 7, 1998Assignee: Hitachi, Ltd.Inventors: Yoshibumi Matsuda, Masaaki Futamoto, Yoshinori Miyamura, Tokuho Takagaki, Hisashi Takano, Fumio Kugiya, Takeshi Nakao, Kyo Akagi, Mikio Suzuki, Hirotsugu Fukuoka, Takayuki Munemoto
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Patent number: 5726837Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: October 24, 1994Date of Patent: March 10, 1998Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
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Patent number: 5568331Abstract: A method and device of head positioning in an information recording/reading device in which a magnetic recording medium with data tracks for recording information thereon is provided and a magnetic head is positioned on the data track to record/read out the information, wherein a data signal is recorded in the data recording layer of said recording medium, a servo signal is recorded in the servo signal recording layer located below said data signal recording layer, said data signal is read out using a data magnetic head whereas said servo signal is read out using a servo magnetic head, and the frequency of said servo signal is within the range of the gap-null frequency of said data magnetic head whereas the frequency of said data signal is within the range of the gap-null frequency of said servo magnetic head, and said magnetic head is positioned on the data track on the basis of said servo signal.Type: GrantFiled: October 25, 1990Date of Patent: October 22, 1996Assignee: Hitachi, Ltd.Inventors: Kyo Akagi, Masaaki Futamoto, Fumio Kugiya, Yoshinori Miyamura, Hisashi Takano, Yoshibumi Matsuda, Mikio Suzuki, Takeshi Nakao, Takayuki Munemoto, Hirotsugu Fukuoka, Makoto Aihara, Tokuho Takagaki, Hajime Aoi, Yosuke Seo
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Patent number: 5411430Abstract: The present invention provides a hybrid lens having an axially asymmetrical non-spherical shape, good mass productivity, and excellent shape precision surface precision as well as environment resistant property, and a method for fabricating same, as well as a method and a device for a laser printer using that hybrid lens. In particular, there are disclosed a method, by which, when an axially asymmetrical non-spherical convex lens is formed by the replica method, the shape thereof is transcribed with a high precision, as well as a method and a device for fabricating an axially asymmetrical non-spherical concave lens (female die) serving as an original for the transcription. In a device for fabricating a female die by direct grinding, the positions of a rotation axis of an object to be worked and a rotation axis of a grinding wheel are controlled and it has further a function of correcting mounting errors, when the object to be worked and the grinding wheel are mounted.Type: GrantFiled: September 25, 1992Date of Patent: May 2, 1995Assignees: Hitachi Ltd., Hitachi Koki Co., Ltd.Inventors: Takashi Nishimura, Akira Arimoto, Yoshinori Miyamura, Yumiko Anzai, Yoshimasa Kondo, Fumihiko Uchida, Shigeo Moriyama
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Patent number: 5390061Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.Type: GrantFiled: June 5, 1991Date of Patent: February 14, 1995Assignee: Hitachi, Ltd.Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu