Abstract: The present invention relates to a compound represented by general formula (I) (wherein, all symbols represent the same meanings as the symbols set forth in the specification), a salt thereof, a solvate thereof, an N-oxide thereof, or a prodrug of any of these. Since the compound has a Brk inhibitory activity, the compound is useful as a drug ingredient for the prevention and/or treatment of Brk-related diseases such as cancer, for example.

Abstract: The present invention relates to a compound represented by general formula (I) (wherein, all symbols represent the same meanings as the symbols set forth in the specification), a salt thereof, a solvate thereof, an N-oxide thereof, or a prodrug of any of these. Since the compound has a Brk inhibitory activity, the compound is useful as a drug ingredient for the prevention and/or treatment of Brk-related diseases such as cancer, for example.

Abstract: The present invention relates to a compound represented by general formula (I) (wherein, all symbols represent the same meanings as the symbols set forth in the specification), a salt thereof, a solvate thereof, an N-oxide thereof, or a prodrug of any of these. Since the compound has a Brk inhibitory activity, the compound is useful as a drug ingredient for the prevention and/or treatment of Brk-related diseases such as cancer, for example.

Abstract: The present invention relates to a compound represented by general formula (I) (wherein, all symbols represent the same meanings as the symbols set forth in the specification), a salt thereof, a solvate thereof an N-oxide thereof, or a prodrug of any of these. Since the compound has a Brk inhibitory activity, the compound is useful as a drug ingredient for the prevention and/or treatment of Brk-related diseases such as cancer, for example.

Abstract: A leaf valve structure according to this invention comprises an annular valve seat, and a leaf that is seated on the valve seat under a predetermined elastic supporting force against a pressure of a working fluid on an inner side of the valve seat. A recessed depression portion having an opening portion on both an inner periphery of the valve seat and a seating surface of the leaf is formed in the valve seat, thereby creating a site where the pressure of the working fluid on the inner side of the valve seat can act more easily on a seating surface between the valve seat and the leaf valve. Accordingly, an effect of a surface adsorption force applied to the leaf valve by the valve seat on a cracking pressure can be suppressed, and as a result, the leaf valve can be lifted under a stable cracking pressure.

Abstract: A leaf valve structure according to this invention comprises an annular valve seat, and a leaf that is seated on the valve seat under a predetermined elastic supporting force against a pressure of a working fluid on an inner side of the valve seat. A recessed depression portion having an opening portion on both an inner periphery of the valve seat and a seating surface of the leaf is formed in the valve seat, thereby creating a site where the pressure of the working fluid on the inner side of the valve seat can act more easily on a seating surface between the valve seat and the leaf valve. Accordingly, an effect of a surface adsorption force applied to the leaf valve by the valve seat on a cracking pressure can be suppressed, and as a result, the leaf valve can be lifted under a stable cracking pressure.

Abstract: A laser apparatus includes a resonator and an excitation source for gain section excitation. The resonator includes a gain section in which a population inversion is obtained by optical excitation or current injection, non-gain sections in which gain with respect to a laser oscillating light beam is not positive, and two reflection mirrors. The gain section has an optical path length approximately one half that of the resonator and placed centrally with respect to the optical axis of the resonator. The non-gain sections are arranged on opposite sides of the gain section. The two reflection mirrors are arranged further beyond the non-gain sections.

Abstract: A laser apparatus includes a resonator and an excitation source as gain section excitation means. The resonator includes a gain section in which population inversion is obtained by optical excitation or current injection, non-gain sections in which gain with respect to a laser oscillating light beam is not positive, and two reflection mirrors. The gain section has an optical path length approximately one half that of the resonator and placed at the central portion with respect to the optical axis of the resonator. The non-gain sections are arranged on both sides of the gain section. The two reflection mirrors are arranged further outside of the non-gain sections.

Abstract: A nonlinear optical element for use in a light-light switching element or optical memory element of an optical information system which is controlled by a control light. The nonlinear optical element comprises an optical active layer having dielectric samples or semiconductor samples which cause a nonlinear optical effect, wherein their shapes and sizes are selected so that the electric field of exciton resonance energy in the sample increases in resonance with size of the sample.

Abstract: A nonlinear optical element for use in a light-light switching element or optical memory element of an optical information system which is controlled by a control light. The nonlinear optical element comprises an optical active layer having dielectric samples or semiconductor samples which cause a nonlinear optical effect, wherein their shapes and sizes are selected so that the electric field of exciton resonance energy in the sample increases in resonance with the size of the sample.

Abstract: In a semiconductor light emitting device comprising an active layer, a hole barrier layer is formed in contact with a first surface of the active layer to provide a barrier against holes in the active layer. The barrier layer does not provide a barrier against electrons tunnelling therethrough. A low energy band gap layer is formed on the barrier layer to have a conduction band minimum which is lower than the conduction band minimum of the active layer at least in a part adjacent to the barrier layer. First and second electrodes are in ohmic contact with an n-type and a p-type conductivity layers which are formed on the low energy band gap layer and a second surface of the active layer, respectively.

Abstract: A semiconductor laser having an active layer of quantum well structure, where the resonator loss is enhanced thereby to conduct an oscillation at a high quantum level.

Abstract: A thin-film optical switching device has a substrate of fused quartz, an optical slab waveguide or Corning glass No. 7059, a thin film crossing a portion of the length of the waveguide, and an interdigital transducer on the substrate for generating an elastic surface wave to propagate it through the thin film. The optical waveguide, and thin film have respective parameters such that almost all energy of an optically guided wave and the elastic surface wave are concentrated into the thin film while the optically guided wave within the thin film undergoes acousto-optical interaction, that is, Bragg diffraction.