Abstract: A wire protecting part partially encloses a first lead frame and a second lead frame and has an enclosing surface from which the first and second lead frames protrude. The enclosing surface is parallel to semiconductor chips, and includes a water stop part protruding, from the enclosing surface, between the first and second lead frames.

Abstract: A semiconductor module includes a semiconductor element, a case configured to house the semiconductor element, and a plurality of control terminal units. Each of the control terminal units includes at least one control terminal electrically connected to the semiconductor element, and a guide block constituted of a separate component from the case fixed integrally to the at least one control terminal. The at least one control terminal each includes a terminal pin part protruding from an outer wall surface of the case. Each of the guide blocks includes a guide pin part protruding from the outer wall surface of the case in a direction the same as the direction in which the terminal pin part protrudes. The guide blocks of the control terminal units are constituted of separate components.

Abstract: A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T2, T1 and T3. The metal plate has a plurality of depressions formed on a rear surface thereof. In a side view, a first edge face, which is an edge face of the conductive pattern, is at a first distance away from a second edge face that is an edge face of the metal plate, and a third edge face, which is an edge face of the semiconductor chip, is at a second distance away from the second edge face. Each depression is located within a depression formation distance from the first edge face, where: 0<depression formation distance?(0.9×T12/first distance), and/or (1.1×T12/first distance)?depression formation distance<second distance.

Abstract: The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.

Abstract: A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T2, T1 and T3. The metal plate has a plurality of depressions formed on a rear surface thereof. In a side view, a first edge face, which is an edge face of the conductive pattern, is at a first distance away from a second edge face that is an edge face of the metal plate, and a third edge face, which is an edge face of the semiconductor chip, is at a second distance away from the second edge face. Each depression is located within a depression formation distance from the first edge face, where: 0<depression formation distance?(0.9×T12/first distance), and/or (1.1×T12/first distance)?depression formation distance<second distance.

Abstract: An example system includes: a display processing unit performing processing of displaying, on a display, an image concerning a processing result of an application and an operation receiving image for receiving an operation related to the application; a first operation reception unit receiving an operation associated with the operation receiving image by detecting contact with the operation receiving image through the touch panel; a second operation reception unit receiving an operation equivalent to operation associated with the operation receiving image through the operation for the hardware key; and an information processing unit performing information processing concerning the application in response to operation received by the first operation reception unit or the second operation reception unit. The display processing unit makes the operation receiving image non-display in the case where the second operation reception unit receives an operation.

Abstract: An example system includes: a display processing unit performing processing of displaying, on a display, an image concerning a processing result of an application and an operation receiving image for receiving an operation related to the application; a first operation reception unit receiving an operation associated with the operation receiving image by detecting contact with the operation receiving image through the touch panel; a second operation reception unit receiving an operation equivalent to operation associated with the operation receiving image through the operation for the hardware key; and an information processing unit performing information processing concerning the application in response to operation received by the first operation reception unit or the second operation reception unit. The display processing unit makes the operation receiving image non-display in the case where the second operation reception unit receives an operation.

Abstract: A lead frame for a resin-molded semiconductor device is provided with die pads for separately mounting chips of power elements and a control IC thereon; terminal leads arranged in a row at one side and including leads for the die pads, and a main circuit, a control power supply and signal circuit separated from the die pads; and a dam bar connecting the terminal leads. In the main circuit terminals and control power supply terminals, a plurality of leads is formed and drawn in advance. After the lead frame is set in a mold die and is resin-molded, certain leads that are not used as the terminal leads are selected among the plurality of the leads, and the certain leads are cut and removed together with the dam bar.

Abstract: A lead frame for a resin-molded semiconductor device is provided with die pads for separately mounting chips of power elements and a control IC thereon; terminal leads arranged in a row at one side and including leads for the die pads, and a main circuit, a control power supply and signal circuit separated from the die pads; and a dam bar connecting the terminal leads. In the main circuit terminals and control power supply terminals, a plurality of leads is formed and drawn in advance. After the lead frame is set in a mold die and is resin-molded, certain leads that are not used as the terminal leads are selected among the plurality of the leads, and the certain leads are cut and removed together with the dam bar.

Abstract: An intelligent power module (IPM) is formed of an inverter having power elements, a predriver for driving the inverter, and a protect circuit, and all these components are integrated into the same package. A shunt resistor is provided at an output of the inverter so that an end-to-end voltage of the shunt resistor can be output to an external device. This configuration enables an output current from an inverter apparatus incorporating the IPM to be detected without using a current transformer that requires a large installation space. In addition, the module terminals of the IPM and the terminal blocks of the inverter apparatus are integrated together to eliminate the need for wire rods and set screws for connections which are used to connect the module terminals and the terminal blocks together.