Abstract: Provided is a filler that has a low viscosity when mixed in a resin material and has reduced permittivity and dielectric loss tangent. The filler includes: a metal oxide particle material; and a polyorganosiloxane compound with which a surface treatment is performed on the metal oxide particle material and which is represented by general formula (1): (RO)3Si—(SiR2—O—)n—SiR3 (in general formula (1), each R is independently selected from among alkyl groups having 1 to 4 carbon atoms, and n is not less than 10 and not greater than 200). A resin composition obtained by containing the filler in a resin is suitable for an electronic material.

Abstract: Provided is a filler that has a low viscosity when mixed in a resin material and has reduced permittivity and dielectric loss tangent. The filler includes: a metal oxide particle material; and a polyorganosiloxane compound with which a surface treatment is performed on the metal oxide particle material and which is represented by general formula (1): (RO)3Si—(SiR2—O—)n—SiR3 (in general formula (1), each R is independently selected from among alkyl groups having 1 to 4 carbon atoms, and n is not less than 10 and not greater than 200). A resin composition obtained by containing the filler in a resin is suitable for an electronic material.

Abstract: Provided is a compound which is mixed with a thermoelectric conversion material matrix as a phonon scattering material. The compound is represented by the following formula: (In the above formula, G1 represents a functional group capable of binding to the thermoelectric conversion material matrix; G2 independently represents G1 or CH3; 0?m?5; 0?m??5; 6?n?1000; and 1/1000<(the number of G1/n)?1).

Abstract: A BiTe-based or CoSb3-based thermoelectric conversion material includes a base phase material in which an oxide layer is formed on a surface of the base phase, in which the thermoelectric conversion material is manufactured by a method including (a) a weak oxidizing process selected from (a1) mixing base phase material powders under a low-oxygen atmosphere and thereafter exposing the base phase material powders to the low-oxygen atmosphere, and (a2) impregnating base phase material powders with alcohol, and (b) an alloying process of performing a heat treatment on a powder obtained in the process (a1) or a solution obtained in (a2), and the processes (a) and (b) are continuously performed.

Abstract: This invention provides a method for manufacturing a nanocomposite thermoelectric conversion material in which phonon-scattering particles having a specific shape are dispersed, reducing thermal conductivity and increasing thermoelectric conversion performance.

Abstract: Provided is a compound which is mixed with a thermoelectric conversion material matrix as a phonon scattering material.

Abstract: A nanocomposite thermoelectric conversion material includes: crystal grains of a matrix phase material; and a grain boundary phase that is formed in an interface between the crystal grains and includes an insulating material. In the interface between the crystal grains of the matrix phase material, an element that forms the matrix phase material and an element that forms the insulating material are bonded by a chemical bond.

Abstract: A thermoelectric semiconductor includes a matrix element that forms a matrix, and a dopant element having an atomic radius that is at least 1.09 times as large as the atomic radius of the matrix element.