Abstract: A semiconductor apparatus manufacturing method is a method of manufacturing a semiconductor apparatus having a peak wavelength of PL emission of greater than or equal to 1.2 ?m at a temperature of 300K. The manufacturing method is provided with: a first forming process of forming a buffer layer (120) including GaAs on a semiconductor substrate (110); a second forming process of making quantum dots (131) including InAs self-form on the formed buffer layer; and a third forming process of forming a cap layer (140) including GaAs to cover the formed quantum dots. A second growth temperature is less than a first growth temperature, wherein the first growth temperature is a temperature in making the quantum dots self-form in the second forming process and the second growth temperature is a temperature in forming the cap layer in the third forming process.