Abstract: Provided are an ultrasonic inspection device, an ultrasonic inspection method, and an atomic power plant nondestructive inspection method that are capable of efficiently generating ultrasonic waves having a sufficient intensity and that are capable of carrying out preferable inspection in a wide range. Provided is an ultrasonic inspection device including a laser device that emits output-adjusted laser light and a volumetric inspection ultrasonic-wave transmitting unit having a transmitting diaphragm that generates ultrasonic waves upon being irradiated with the laser light emitted by the laser device, inspection being carried out by radiating the ultrasonic waves generated by the transmitting diaphragm of the volumetric inspection ultrasonic-wave transmitting unit on a structural member, wherein the transmitting diaphragm is formed of titanium.

Abstract: After forming a gate electrode (4a) in a first step, a gate insulating film (5), a semiconductor film (8) and a conducting film (12) including a transparent conducting film (9) are stacked, and on the thus obtained multilayered body (18), a resist pattern (13a) including a first opening (14a) for exposing the conducting film (12) therein and a second opening (14b) having a bottom portion (B) above the gate electrode (4a) is formed. Portions of the conducting film (12) and the semiconductor film (8) exposed in the first opening (14a) are etched, the bottom portion (B) of the second opening (14b) is removed for exposing the conducting film (12) therein, and the exposed conducting film (12) is etched, so as to form a TFT (20) in a second step. A pixel electrode (5a), a protection masking layer (17a) and a projection (17b) are formed in a third step.

Abstract: An object of the present invention is to provide an extreme ultraviolet light source target which can emits extreme ultraviolet light with high emission efficiency. A solid target made of heavy metal or heavy-metal compound and having a density 0.5 to 80% that of the crystal density is used. When the target is irradiated with a laser beam, plasma of the heavy metal contained in the target is generated, and extreme ultraviolet light having a predetermined wavelength which corresponds to the kind of the heavy metal is emitted from the plasma. When the density of the target is made to be smaller than the crystal density as described above, space distribution of the density of the generated plasma can be controlled, and the region in which plasma absorbs energy of the laser beam overlaps the region in which the plasma emits the extreme ultraviolet light. Thus, emission efficiency can be improved, preventing energy loss.

Abstract: An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.

Abstract: A color filter substrate for a liquid crystal display device includes a color layer, a photo spacer and a counter electrode disposed on the substrate, and an alignment control protrusion is disposed on the counter electrode for controlling alignment of liquid crystal. A manufacturing method for the color filter substrate includes the step of forming an opening by laser irradiation in a region of the counter electrode corresponding to an absent portion occurring in the alignment control protrusion. The manufacturing method is also applicable to an active matrix substrate for a liquid crystal display device. The manufacturing method can effectively correct a defect if one occurs in the alignment control protrusion.

Abstract: In a liquid crystal display device, an array substrate and a CF substrate arranged face to face with each other. A liquid crystal layer is provided between the array substrate and the CF substrate. The array substrate and the CF substrate are bonded together by a sealing member containing a photo curing material. The array substrate has a surface opposed to the CF substrate. Metal wires are provided in the circumferential portion of the opposed surface. A transparent film is disposed between the metal wires and the sealing member.

Abstract: A color filter substrate includes a transparent substrate with first and second opposed edges, a color filter layer including color filters of first, second and third types extending in a first direction with the third type interposed between the first and second types, and an opaque layer including opaque portions extending in the first direction and another opaque portion connected to the other opaque portions along the second edge. The color filter substrate is fabricated by (a) forming the opaque layer on the transparent substrate, and then (b) forming the color filter layer thereon. The step (a) includes forming an opening in a non-effective display area of the color filter substrate between one end of each color filter of the third type and the second edge. The step (b) includes attaching and rolling a dry film in the first direction on the transparent substrate after the color filters of the first and second types have been provided thereon.

Abstract: An object of the present invention is to provide an extreme ultraviolet light source target which can emits extreme ultraviolet light with high emission efficiency. A solid target made of heavy metal or heavy-metal compound and having a density 0.5 to 80% that of the crystal density is used. When the target is irradiated with a laser beam, plasma of the heavy metal contained in the target is generated, and extreme ultraviolet light having a predetermined wavelength which corresponds to the kind of the heavy metal is emitted from the plasma. When the density of the target is made to be smaller than the crystal density as described above, space distribution of the density of the generated plasma can be controlled, and the region in which plasma absorbs energy of the laser beam overlaps the region in which the plasma emits the extreme ultraviolet light. Thus, emission efficiency can be improved, preventing energy loss.

Abstract: A server backup device comprises a unit detecting the failure of an IP Centrex server and a unit rewriting a destination address in a prescribed message transmitted from a terminal for intra-office communication between terminals on a network during the failure from the address of the server backup device to the address of a called terminal and directly transferring the message to the called terminal without going through the IP Centrex server.

Abstract: A method of driving an LCD is provided, where adjacent bus lines are short-circuited during LCD driving operations. In certain example embodiments, an inverse driving technique is used to invert the polarity of a video signal at every one row for instance. In certain example embodiments, short-circuited adjacent data lines (source lines) are in communication with pixels of the same color.

Abstract: A color filter substrate includes a transparent substrate with first and second opposed edges, a color filter layer including color filters of first, second and third types extending in a first direction with the third type interposed between the first and second types, and an opaque layer including opaque portions extending in the first direction and another opaque portion connected to the other opaque portions along the second edge. The color filter substrate is fabricated by (a) forming the opaque layer on the transparent substrate, and then (b) forming the color filter layer thereon. The step (a) includes forming an opening between one end of each color filter of the third type and the second edge. The step (b) includes attaching and rolling a dry film in the first direction on the transparent substrate after the color filters of the first and second types have been provided thereon.

Abstract: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

Abstract: An object of the invention is to provide an inexpensive method of manufacturing a liquid crystal display apparatus having a low resolution by utilizing a TFT substrate adapted for a high-definition liquid crystal display apparatus. The liquid crystal display apparatus having a low resolution is realized in an inexpensive way by using the TFT substrate adapted for a high-definition liquid crystal display apparatus and by combining a new color filter substrate and driver ICs suited to a new driving method, the new color filter substrate being formed such that one pixel group is formed by pixels of a color filter substrate wherein the number of pixels is the product of three by an integer.

Abstract: An inexpensive method of manufacturing an LCD having a low resolution by utilizing a TFT substrate may be provided. In certain embodiments, an LCD having a low resolution is realized in an inexpensive way by using the TFT substrate adapted for a high-definition liquid crystal display apparatus and by combining a new color filter substrate and/or driver ICs suited to a new driving method. In certain embodiments, the array of pixels is divided into a plurality of pixel groups. One or more of the pixel groups may have a number of different pixels therein defined by the equation: n×m×l, where “n” is the number of different colors, “m” is the number of columns (i.e., same as rows) of same colored pixels, and “l” is a natural number.

Abstract: The liquid crystal display device of this invention includes: gate signal lines; source signal lines crossing the gate signal lines; an interlayer insulating film formed on the gate signal lines and the source signal lines; and pixel electrodes formed on the interlayer insulating film, wherein a first pixel electrode and a second pixel electrode adjacent to each other at both sides of the gate signal line partially overlap the gate signal line sandwiched by the first pixel electrode and the second pixel electrode, and an overlap width of the first pixel electrode on the gate signal line is different from an overlap width of the second pixel electrode on the gate signal line.

Abstract: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

Abstract: In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.

Abstract: There is provided a liquid crystal display device which utilizes low resistance metal wiring and in which pixel electrodes and drain electrodes can be reliably connected and a method for manufacturing the same. Gate electrodes connected to gate signal lines are formed on a transparent insulating substrate, and a gate insulation film is formed to cover the same. A semiconductor layer, source electrodes and drain electrodes are formed over the gate electrodes, and a metal layer to become source signal lines and source and drain extraction electrodes is formed. The metal layer is formed by stacking a titanium film and an aluminum film. The interlayer insulation film is formed to cover TFTs, gate signal lines and source signal lines. Through holes are formed in the interlayer insulation film to expose at least a part of the periphery of the drain extraction electrodes. Pixel electrodes are formed to cover the through holes.

Abstract: A method is provided for driving an active matrix substrate including a plurality of signal lines provided on an insulator substrate along a first direction, a plurality of scanning lines provided along a second direction to intersect the plurality of signal lines, a plurality of pixel electrodes provided at the intersections of the plurality of signal lines and the plurality of scanning lines, and a plurality of common electrodes provided to form a storage capacitor between each common electrode and the corresponding pixel electrode, a semiconductor layer being provided between each common electrode and the corresponding pixel electrode. The method includes the step of applying a signal to each common electrode such that the depletion layer formed in the semiconductor layer has the maximum width.

Abstract: A photomask of the present invention is a photomask for use in production of a display device, the photomask having on its surface a plurality of drawn areas and a transitional portion between two adjacent ones of the drawn areas. A pattern is formed on at least one of the drawn areas. A ratio between a pattern pitch and a transitional portion pitch is an integral ratio such that a length defined by a least common multiple of the pattern pitch and the transitional portion pitch is 1 mm or less.