Abstract: A socket includes a pin block on which a plurality of contact probes are installed, a pin plate configured to hold the plurality of contact probes together with the pin block, and an engagement portion configured to engage the pin block and the pin plate with each other. The engagement portion is configured to detachably engage the pin block and the pin plate with each other.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: [Problems] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means for Solving the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu—Ga powder or a mixed powder of NaF powder, Cu—Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: [Problems] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means for Solving the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu—Ga powder or a mixed powder of NaF powder, Cu—Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.

Abstract: In a double glazing where a pair of transparent glass sheets are arranged at an interval by having a spacer at the circumferential end portion and where a hollow layer sealed between the pair of glass sheets is formed, there is provided an electromagnetic absorption board used for wireless LAN, which is characterized in that the thickness of the glass sheet is in a range of 2.5-20 mm, that the thickness of the hollow layer is in a range of 2.5-15 mm, that at least one glass sheet of the pair of glass sheets is formed with a resistive film having a surface resistance (surface resistivity) in a range of 20?/? to 2 k?/?, and that the resistive film is formed on a glass sheet side on the hollow layer side.

Abstract: A method for manufacturing a Co-base sintered alloy sputtering target for the formation of a magnetic recording film including providing a Cr—Co alloy powder consisting of 50 to 70 atomic % of Cr and remaining Co, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders together so as to give the chemical composition consisting of 2 to 15 mol % of a non-magnetic oxide, 3 to 20 mol % of Cr, and 5 to 30 mol % of Pt and a remainder containing Co, and sintering the mixture under pressure. Or alternatively providing a Pt—Cr binary alloy powder consisting of 10 to 90 atomic % of Pt and remaining Cr, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders so as to give the chemical composition above, and then sintering the mixture under pressure.

Abstract: In a double glazing where a pair of transparent glass sheets are arranged at an interval by having a spacer at the circumferential end portion and where a hollow layer sealed between the pair of glass sheets is formed, there is provided an electromagnetic absorption board used for wireless LAN, which is characterized in that the thickness of the glass sheet is in a range of 2.5-20 mm, that the thickness of the hollow layer is in a range of 2.5-15 mm, that at least one glass sheet of the pair of glass sheets is formed with a resistive film having a surface resistance (surface resistivity) in a range of 20-2K?/?, and that the resistive film is formed on a glass sheet side on the hollow layer side.

Abstract: Disclosed is a magneto-optical recording medium which comprises a transparent substrate and, provided on the substrate, a magneto-optical recording film comprising a perpendicular magnetic film based on rare earth metal-transition metal and an auxiliary magnetic film having spontaneous magnetization which exerts, between itself and the magneto-optical recording film, an exchange coupling force on each other and in which the auxiliary magnetic film used is a magnetic film which readily rotates its magnetization direction toward the external magnetic field in the neighborhood of the Curie temperature of the magneto-optical recording film and has a squareness ratio of not more than 1 in the neighborhood of the Curie temperature, and a process for producing the magneto-optical recording medium.

Abstract: Disclosed is a magneto-optical recording medium which comprises a transparent substrate and, provided on the substrate, a magneto-optical recording film comprising a perpendicular magnetic film based on rare earth metal-transition metal and an auxiliary magnetic film having spontaneous magnetization which exerts, between itself and the magneto-optical recording film, an exchange coupling force and wherein the auxiliary magnetic film is a magnetic film which readily rotates its magnetization direction toward the external magnetic field in the neighborhood of the Curie temperature of the magneto-optical recording film and has a squareness ratio of not more than 1 in the neighborhood of the Curie temperature. Also disclosed is a process for producing the magneto-optical recording medium.

Abstract: A magneto-optic recording medium comprises on a substrate the first dielectric substance layer, a magneto-optic recording layer, the second dielectric substance layer and a reflective layer. The magneto-optic recording layer has, in the range of the Curie temperature Tc to (Tc-50) .degree.C., a value of a product of a saturated magnetization Ms and a coercive force Hc of not more than 4.times.10.sup.4 erg/cm.sup.3. The magneto-optic recording medium can be recorded at a magnetic field as low as 100 (Oe) with an excellent C/N.

Abstract: An optical d.c. voltage transformer having an electrooptic medium to which a d.c. electrical field or voltage to be measured is to be applied. The electrooptic medium affects the polarized light from the polarizer by an electrooptical effect to a degree proportional to the strength of the electrical field or voltage. The transformer includes a photodetector for producing an optical signal proportional to the affected light received from the electrooptic medium, a device for converting the optical signal from the photodetector into an electrical signal, a chopper for pulsating the electrical field or voltage to be applied to the electrooptic medium, in terms of time, a detector for demodulating the electrical signal from the converting device in synchronism with the pulsated electrical field or voltage, and an output unit for visually presenting the demodulated electrical signal similar in polarity to the electrical field or voltage to be measured.