Abstract: A powder supplier, which supplies a powder material to a pressure molding mechanism that continuously generates a molded body, including: a casing having an inlet to which the powder material is supplied and an outlet from which the powder material is discharged; one or a plurality of screws being disposed inside the casing and rotationally driven to transport the powder material in an axial direction; motors being disposed outside the casing and rotationally driving screws; and a regulator being disposed between the screws, and the outlet inside the casing, and regulating a flow of the powder material. The regulator has a rotation shaft perpendicular to the axial direction of the screws, and a width direction of the powder material discharged from the outlet, and being configured to rotate about the rotation shaft.

Abstract: A powder supplier, which supplies a powder material to a pressure molding mechanism that continuously generates a molded body, including: a casing having an inlet to which the powder material is supplied and an outlet from which the powder material is discharged; one or a plurality of screws being disposed inside the casing and rotationally driven to transport the powder material in an axial direction; motors being disposed outside the casing and rotationally driving screws; and a regulator being disposed between the screws, and the outlet inside the casing, and regulating a flow of the powder material. The regulator has a rotation shaft perpendicular to the axial direction of the screws, and a width direction of the powder material discharged from the outlet, and being configured to rotate about the rotation shaft.

Abstract: A separator includes a separation functional layer and a support layer. The separation functional layer is configured as a denser layer with a smaller pore size and a lower porosity than the support layer. Accordingly, movement of metal foreign objects from the positive electrode plate side to the negative electrode plate side, and precipitation of metal foreign objects on the negative electrode plate side can be inhibited, thereby making it possible to ensure battery performance and safety.

Abstract: A separator includes a separation functional layer and a support layer. The separation functional layer is configured as a denser layer with a smaller pore size and a lower porosity than the support layer. Accordingly, movement of metal foreign objects from the positive electrode plate side to the negative electrode plate side, and precipitation of metal foreign objects on the negative electrode plate side can be inhibited, thereby making it possible to ensure battery performance and safety.

Abstract: A first electrode layer (202) that is a multilayer electrode, a photoelectric conversion layer (206), and an ITO layer (210) are sequentially disposed on a glass substrate (201). The ITO layer (210) is a transparent electrode layer serving as a second electrode layer. The first electrode layer (202) includes a Cr layer (203), a mixed layer (204) of Cr and ZnO, and a ZnO layer (205) that are stacked in this order when viewed from the glass substrate (201). The content of Cr in the mixed layer (204) gradually increases toward the Cr layer (203), thereby preventing exfoliation on the Cr layer (203) and the ZnO layer (205) for a long time.

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.

Abstract: A semiconductor device capable of preventing an interlayer dielectric film from deterioration resulting from a liquid such as a chemical solution penetrating into the interlayer dielectric film and recovering the interlayer dielectric film from deterioration with a prescribed gas is obtained. This semiconductor device comprises a first insulating film formed on a substrate and a first gas-liquid separation film, formed on at least a part of the surface of the first insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas.

Abstract: A linear motor capable of attaining thinning is obtained. This linear motor (100) includes a spiral coil (141, 142, 441, 442); and a movable portion (120, 220), including a first pole face (121a) having a first polarity and a second pole face (122a) having a second polarity different from the first polarity on a surface opposed to the spiral coil, provided to be movable in a direction along the surface of the spiral coil.

Abstract: A linear motor whose thickness can be reduced is obtained. This linear motor (100) includes a spiral coil (141), wherein the spiral coil has a first section (141a, 141b) and a second section (141c, 141d) and is so formed that the magnitude of a magnetic flux of a magnetic field generated by current flowing in the first section is larger than the magnitude of a magnetic flux of a magnetic field generated by current flowing in the second section.

Abstract: An electrostatic induction generator requiring no electric power supply device and capable of being mounted on a printed board is obtained. This electrostatic induction generator includes a pair of first electrodes capable of storing charges, a pair of vibrating electrodes capable of vibrating in a first direction and a second direction different from the first direction, and charged with opposite charges due to charges stored in the pair of first electrodes respectively, and a second electrode for electrically connecting the pair of vibrating electrodes to each other in a case where the pair of vibrating electrodes are at prescribed positions.

Abstract: An electret device includes an electret film capable of storing charges and a protective film formed so as to substantially surround a side end surface of the electret film.

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An insulating layer is formed on a semiconductor substrate, and has a through hole for via. A porous silica layer has a trench for interconnection communicating to the through hole for via, and is formed on the insulating layer in contact therewith. A conductive layer is formed in the through hole for via and in the trench for interconnection. The insulating layer is formed from a material containing carbon, hydrogen, oxygen, and silicon, and having absorption peak attributed to Si—CH3 bond in a range from at least 1260 cm?1 to at most 1280 cm?1 (around 1274 cm?1) when measured with FT-IR. Thus, a semiconductor device having a porous insulating layer in which depth of the trench for interconnection is readily controlled, a dielectric constant is low, and increase in leakage current is less likely, as well as a manufacturing method thereof can be obtained.

Abstract: This energy converter includes a first flat coil and a magnet opposed to the first flat coil at an interval, and the first flat coil and the magnet are so formed as to be relatively movable, for converting kinetic energy to electric energy by electromagnetic induction.