Abstract: A data storing fuse element unit includes a plurality of fuse elements, stores data in the respective fuse elements in a bit unit in accordance with presence and absence of cutting of fuse elements, and a latch circuit unit latches the stored data by the bit unit. A logic information storing fuse element unit stores logic information of whether output logic of the data stored in the fuse elements is to be inverted or not. A data selecting unit selects any one of data latched in the latch circuit unit and data with the output logic of the data latched in the latch circuit unit inverted in a logic inverting unit, in accordance with logic information of the logic information storing fuse element unit and outputs the data.

Abstract: A logic in DRAM LSI is disclosed, which comprises a plurality of DRAM circuits, a control circuit that receives a test control signal to perform a test control in which the plurality of RAM circuits are tested while the access to the plurality of DRAM circuits is subsequently changed for each row, an input selector that is controlled by the control circuit and inputs a DRAM macro signal to the plurality of DRAM circuits at the time of a test, and an output selector that is controlled by the control circuit, and outputs output signals of the plurality of DRAM circuits sequentially to a macro output terminal at the time of the test. According to the DRAM integrated LSI, a test time required to test the plurality of DRAM circuits integrated in the LSI is shortened. Moreover, data that is read from the plurality of DRAM circuits is transferred in a high speed.

Abstract: A logic in DRAM LSI is disclosed, which comprises a plurality of DRAM circuits, a control circuit that receives a test control signal to perform a test control in which the plurality of RAM circuits are tested while the access to the plurality of DRAM circuits is subsequently changed for each row, an input selector that is controlled by the control circuit and inputs a DRAM macro signal to the plurality of DRAM circuits at the time of a test, and an output selector that is controlled by the control circuit, and outputs output signals of the plurality of DRAM circuits sequentially to a macro output terminal at the time of the test. According to the DRAM integrated LSI, a test time required to test the plurality of DRAM circuits integrated in the LSI is shortened. Moreover, data that is read from the plurality of DRAM circuits is transferred in a high speed.