Patents by Inventor Yoshinori TANEDA
Yoshinori TANEDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10444628Abstract: A compound for forming an organic film shown by the formula (1A), RX)m1??(1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2?m1?10, wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.Type: GrantFiled: December 7, 2016Date of Patent: October 15, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Tsutomu Ogihara, Takeru Watanabe, Yoshinori Taneda, Kazunori Maeda
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Patent number: 10429739Abstract: The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.Type: GrantFiled: November 22, 2016Date of Patent: October 1, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Tsutomu Ogihara, Takeru Watanabe, Yoshinori Taneda, Rie Kikuchi
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Patent number: 9902875Abstract: A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process.Type: GrantFiled: September 11, 2015Date of Patent: February 27, 2018Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro Tachibana, Yoshinori Taneda, Rie Kikuchi, Tsutomu Ogihara
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Patent number: 9880470Abstract: A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.Type: GrantFiled: September 16, 2015Date of Patent: January 30, 2018Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro Tachibana, Yoshinori Taneda, Rie Kikuchi, Tsutomu Ogihara
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Publication number: 20170183531Abstract: The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.Type: ApplicationFiled: November 22, 2016Publication date: June 29, 2017Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke KORI, Tsutomu OGIHARA, Takeru WATANABE, Yoshinori TANEDA, Rie KIKUCHI
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Publication number: 20170184968Abstract: A compound for forming an organic film shown by the formula (1A), R—(—X)m1 ??(1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and ml represents an integer satisfying 2?m1?10, wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.Type: ApplicationFiled: December 7, 2016Publication date: June 29, 2017Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke KORI, Tsutomu OGIHARA, Takeru WATANABE, Yoshinori TANEDA, Kazunori MAEDA
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Patent number: 9627204Abstract: The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.Type: GrantFiled: June 17, 2014Date of Patent: April 18, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu Ogihara, Takafumi Ueda, Yoshinori Taneda, Seiichiro Tachibana
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Patent number: 9580623Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.Type: GrantFiled: March 20, 2015Date of Patent: February 28, 2017Assignees: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Seiichiro Tachibana, Yoshinori Taneda, Rie Kikuchi, Tsutomu Ogihara, Yoshio Kawai, Karen Petrillo, Martin Glodde
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Patent number: 9522979Abstract: The present invention provides a fluorine-containing silicon compound represented by the general formula (1), wherein each R1 independently represents a hydrocarbon group having 1 to 6 carbon atoms; each R2 independently represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; and n is an integer satisfying 0?n?2. There can be provided a fluorine-containing silicon compound having good storage stability and useful as a raw material of a composition for forming a silicon-containing intermediate film and a silicon-containing photoresist composition used for a fine processing in the manufacturing process of a semiconductor device.Type: GrantFiled: December 28, 2015Date of Patent: December 20, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru Watanabe, Yoshinori Taneda, Tsutomu Ogihara, Seiichiro Tachibana
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Publication number: 20160276152Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.Type: ApplicationFiled: March 20, 2015Publication date: September 22, 2016Inventors: Seiichiro TACHIBANA, Yoshinori TANEDA, Rie KIKUCHI, Tsutomu OGIHARA, Yoshio KAWAI, Karen PETRILLO, Martin GLODDE
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Publication number: 20160229960Abstract: The present invention provides a fluorine-containing silicon compound represented by the general formula (1), wherein each R1 independently represents a hydrocarbon group having 1 to 6 carbon atoms; each R2 independently represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; and n is an integer satisfying 0?n?2. There can be provided a fluorine-containing silicon compound having good storage stability and useful as a raw material of a composition for forming a silicon-containing intermediate film and a silicon-containing photoresist composition used for a fine processing in the manufacturing process of a semiconductor device.Type: ApplicationFiled: December 28, 2015Publication date: August 11, 2016Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru WATANABE, Yoshinori TANEDA, Tsutomu OGIHARA, Seiichiro TACHIBANA
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Patent number: 9377690Abstract: The invention provides a composition for forming a metal oxide-containing film comprising, as a component (A), a metal oxide-containing compound A1 obtained by hydrolysis and/or condensation of one or more kinds of hydrolysable metal compounds shown by the following general formula (A-1), as a component (B), an aromatic compound shown by the following general formula (B-1), the compound generating a hydroxyl group by thermal and/or an acid. There can be provided a composition for a resist lower layer film, which has high etching selectivity, capable of subjecting to stripping under mild conditions than the conventional process, has excellent pattern adhesiveness, and fine pattern formation can be performed.Type: GrantFiled: December 16, 2013Date of Patent: June 28, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu Ogihara, Takafumi Ueda, Seiichiro Tachibana, Yoshinori Taneda
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Patent number: 9312127Abstract: A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.Type: GrantFiled: August 4, 2015Date of Patent: April 12, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu Ogihara, Daisuke Kori, Yoshinori Taneda, Yusuke Biyajima, Rie Kikuchi, Seiichiro Tachibana
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Publication number: 20160096977Abstract: A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.Type: ApplicationFiled: September 16, 2015Publication date: April 7, 2016Inventors: Seiichiro TACHIBANA, Yoshinori TANEDA, Rie KIKUCHI, Tsutomu OGIHARA
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Publication number: 20160096978Abstract: A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process.Type: ApplicationFiled: September 11, 2015Publication date: April 7, 2016Inventors: Seiichiro TACHIBANA, Yoshinori TANEDA, Rie KIKUCHI, Tsutomu OGIHARA
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Publication number: 20160064220Abstract: A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.Type: ApplicationFiled: August 4, 2015Publication date: March 3, 2016Inventors: Tsutomu OGIHARA, Daisuke KORI, Yoshinori TANEDA, Yusuke BIYAJIMA, Rie KIKUCHI, Seiichiro TACHIBANA
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Patent number: 9188866Abstract: The invention provides a composition for forming a titanium-containing resist underlayer film comprising: as a component (A), compounds selected from titanium compounds represented by the following general formulae (A-1) and (A-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, as a component (B), compounds selected from titanium compounds represented by the following general formulae (B-1) and (B-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, and as a component (D), solvent. There can be provided a composition for forming a titanium-containing resist underlayer film to form a resist underlayer film having favorable pattern adhesiveness and excellent etching selectivity.Type: GrantFiled: February 6, 2014Date of Patent: November 17, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu Ogihara, Seiichiro Tachibana, Takafumi Ueda, Yoshinori Taneda
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Patent number: 9176382Abstract: The invention provides a composition for forming a titanium-containing underlayer film comprising: as a component (A), a titanium-containing compound obtained by reacting a divalent or a trivalent alcohol represented by the following general formula (A-2) to one or more kinds of compounds selected from a titanium compound represented by the following general formula (A-1) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compound and as a component (C), solvent. There can be provided a composition for forming a titanium-containing underlayer film that is excellent in storage stability without changes in characteristics, pattern adhesiveness relative to a fine pattern, and etching selectivity relative to conventional organic film and silicon-containing film.Type: GrantFiled: February 6, 2014Date of Patent: November 3, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu Ogihara, Seiichiro Tachibana, Takafumi Ueda, Yoshinori Taneda
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Patent number: 9075309Abstract: The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C). The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound.Type: GrantFiled: January 22, 2013Date of Patent: July 7, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu Ogihara, Takafumi Ueda, Yoshinori Taneda
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Patent number: 9069247Abstract: The present invention provides a silicon-containing surface modifier containing one or more repeating units each represented by the following general formula (A), or one or more partial structures each represented by the following general formula (C): It is aimed at providing a resist lower layer film which is usable for a resist pattern formed of a hydrophilic organic compound to be obtained in a negative development.Type: GrantFiled: January 22, 2013Date of Patent: June 30, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu Ogihara, Takafumi Ueda, Yoshinori Taneda