Abstract: A compound containing Sn, Te and Mn, and further containing either one or both of Sb and Bi.

Abstract: A compound containing Sn, Te and Mg, and further containing either one or both of Sb and Bi.

Abstract: In order to obtain an inductor element advantageous for miniaturization, an inductor element 10 according to an embodiment of the present disclosure is provided with a metal medium 2 in which ordered spins are spatially arranged so as to have a non-collinear spin structure when traced in a certain direction. In the inductor element, an electric current I is applied through the metal medium so as to have a projective component of the direction. Preferable examples of the non-collinear spin structure for the metal medium include a spiral structure and a cycloidal structure.

Abstract: The present invention relates to a compound containing at least germanium, tellurium, bismuth, copper, antimony and silver as constituent elements.

Abstract: The present invention relates to a compound containing at least germanium, tellurium, bismuth and copper as constituent elements, wherein the longest axis of ubiquitous bismuth crystals and copper crystals is less than 2.0 ?m.

Abstract: A photoelectric conversion device includes a photoelectric conversion element formed of a polar material and including no p-n junction, and first and second electrodes provided on the photoelectric conversion element and arranged at an interval. Space-inversion symmetry of a structure of the photoelectric conversion element is broken. The first and second electrodes are each formed of a metal material that generates no substantial potential barrier preventing majority carriers for the photoelectric conversion element from moving from the electrode to the photoelectric conversion element. Light incidence on the photoelectric conversion element without voltage application between the first and second electrodes causes electromotive force to be generated between first and second electrodes, and enables electric current to be continuously taken out from the first and second electrodes.

Abstract: The present invention relates to a compound containing at least germanium, tellurium, bismuth and copper as constituent elements, wherein the longest axis of ubiquitous bismuth crystals and copper crystals is less than 2.0 ?m.

Abstract: To provide a high-speed, large-scale non-volatile skyrmion random access memory that prevents incorrect writing and incorrect erasure, has a circuit with good storage-data sensitivity, generates smaller leakage current, and consumes less power. To provide a magnetic element for generating and erasing a skyrmion including: a first magnetic material thin film in which the skyrmion is generated and erased; a sensing element for sensing the skyrmion; and at least one of a first transistor for selecting the first magnetic material thin film, and a second transistor for selecting the skyrmion sensing element.

Abstract: An electronic device is provided, including: a first drive electrode; a second drive electrode that is spaced apart from the first drive electrode; and a topological insulator that contacts both of the first drive electrode and the second drive electrode and has magnetism, wherein the topological insulator includes a first region having a first coercivity and a second region having a second coercivity that is different from the first coercivity. A fabrication method of a topological insulator is also provided, including: preparing a topological insulator having magnetism and a first coercivity; and forming a second region having a second coercivity that is different from the first coercivity by irradiating a partial region of the topological insulator with ions.

Abstract: To provide a high-speed, large-scale non-volatile skyrmion random access memory that prevents incorrect writing and incorrect erasure, has a circuit with good storage-data sensitivity, generates smaller leakage current, and consumes less power. To provide a magnetic element for generating and erasing a skyrmion including: a first magnetic material thin film in which the skyrmion is generated and erased; a sensing element for sensing the skyrmion; and at least one of a first transistor for selecting the first magnetic material thin film, and a second transistor for selecting the skyrmion sensing element.

Abstract: A photoelectric conversion device includes a photoelectric conversion element formed of a polar material and including no p-n junction, and first and second electrodes provided on the photoelectric conversion element and arranged at an interval. Space-inversion symmetry of a structure of the photoelectric conversion element is broken. The first and second electrodes are each formed of a metal material that generates no substantial potential barrier preventing majority carriers for the photoelectric conversion element from moving from the electrode to the photoelectric conversion element.

Abstract: The present invention relates to a compound containing at least germanium, tellurium, bismuth and copper as constituent elements, wherein the longest axis of ubiquitous bismuth crystals and copper crystals is less than 2.0 ?m.

Abstract: The present invention relates to a compound containing at least germanium, tellurium, bismuth, copper, antimony and silver as constituent elements.

Abstract: Provided is a magnetic element which can generate a skyrmion by a stacked film including a magnetic layer and a non-magnetic layer, and a skyrmion memory to which the magnetic element is applied and the like. Provided is a magnetic element for generating a skyrmion, the magnetic element comprising a two-dimensional stacked film, wherein the two-dimensional stacked film is at least one or more multiple layered films including a magnetic film and a non-magnetic film stacked on the magnetic film. Also, provided is a skyrmion memory including a plurality of the magnetic elements stacked in a thickness direction.

Abstract: Control of electrical conductivity is provided via electrically conductive magnetic domain walls between magnetic domains. The magnetic domains are identical except for their magnetic configuration. Altering a configuration of the magnetic domains (e.g., by thermal treatment, application of a magnetic field, etc.) can alter the electrical resistance of a device. Such devices can be used as non-volatile information storage devices or as sensors.

Abstract: A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter ? being generated, is such that 2?>Wm>?/2 and 2?>hm>?/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that ??W>?/4 and 2?>h>?/2.

Abstract: To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like. To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a ?-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an Au4Al type crystal structure.

Abstract: To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like. To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a ?-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an Au4Al type crystal structure.

Abstract: An electronic device is provided, including: a first drive electrode; a second drive electrode that is spaced apart from the first drive electrode; and a topological insulator that contacts both of the first drive electrode and the second drive electrode and has magnetism, wherein the topological insulator includes a first region having a first coercivity and a second region having a second coercivity that is different from the first coercivity. A fabrication method of a topological insulator is also provided, including: preparing a topological insulator having magnetism and a first coercivity; and forming a second region having a second coercivity that is different from the first coercivity by irradiating a partial region of the topological insulator with ions.

Abstract: Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·?>Wm??, where ? denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·?>Hm??, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.