Abstract: A first metal layer of aluminum or an aluminum alloy is formed on a second interlayer insulating layer, and a second metal layer of silver or a silver alloy, which is patterned in the same pattern as the first metal layer, is formed on the first metal layer. The first metal layer and the second metal layer constitute wirings. The wirings are patterned in such a way as to overlie the gate lines and data lines of associated TFTs, and are laid out in such a way as to cover the TFTs.

Abstract: A LC panel for use in a projection LCD device includes a source driver IC operating in a frame-inversion driving scheme. The luminance gradient caused by the frame-inversion driving scheme in the active-matrix substrate is cancelled by the luminance gradient caused by the heat generated by the source driver. A heat adjusting element is provided for the source driver IC, wherein the heat adjusting element is either a radiator or a heater depending on the relationship of the magnitude between the luminance gradients caused by the frame-inversion driving scheme and the source driver IC.

Abstract: A fabrication method for an emitter includes the steps of forming on a glass substrate a CNT film which contains a plurality of carbon nanotubes (CNTs) and constitutes an emitter electrode, forming a gate electrode via an insulating film on the CNT film, forming a plurality of gate openings in the gate electrode and the insulating film, and aligning upright the CNTs in the gate opening. The upright alignment generates a stable uniform emission current and provides excellent emission characteristics.

Abstract: A first metal layer of aluminum or an aluminum alloy is formed on a second interlayer insulating layer, and a second metal layer of silver or a silver alloy, which is patterned in the same pattern as the first metal layer, is formed on the first metal layer. The first metal layer and the second metal layer constitute wirings. The wirings are patterned in such a way as to overlie the gate lines and data lines of associated TFTs, and are laid out in such a way as to cover the TFTs.

Abstract: A fabrication method for an emitter includes the steps of forming on a glass substrate (10) a CNT film (12) which contains a plurality of carbon nanotubes (CNTs) (12a) and constitutes an emitter electrode (12b), forming a gate electrode (16) via an insulating film (13) on the CNT film (12), forming a plurality of gate openings (17) in the gate electrode (16) and the insulating film (13), and aligning upright the CNTs (12a) in the gate opening (17). The upright alignment generates a stable uniform emission current and provides excellent emission characteristics.

Abstract: Upon wet etching and thereby patterning carbon nanotubes (106) by a transfer method, a solution for dissolving a binder used in the transfer method as a solution used for the wet etching is used, and the carbon nanotubes (106) tangled with each other are rubbed off with a cloth-like substance (112) upon the wet etching. Furthermore, upon patterning the carbon nanotubes (106) using a dry etching method, a metal film or a film made of a substance resistant to damage upon the dry etching and causing no damage to the carbon nanotubes (106) when removed is used as a mask. A fine carbon nanotube pattern having an excellent flatness is formed.

Abstract: To provide a method for manufacturing a high-performance field electron emission apparatus, wherein occurrence of damage to a CNT during a manufacturing step is prevented, and thereby, the CNT can adequately keep an inherent electron emission characteristic of exhibiting a large current density with a low threshold value. This method for manufacturing a field electron emission apparatus is related to the manufacture of a field electron emission apparatus using the CNT as an electron source. In the method, a protective film formation step is performed in order to form an aluminum film 4 as the protective film on the surface of the CNT film 2 during a manufacturing process of at least a part of the apparatus. The CNT surface structure is protected with this conductive protective film (aluminum film 4, 40), while the structure significantly affects the electron emission characteristic. Consequently, the electron emission characteristic inherent in the CNT can be adequately ensured and be exhibited.

Abstract: In a field emission cold cathode device having a block defined by a contour and a plurality of holes arranged in the block, each hole is uniform in shape to obtain a uniform electric current in the block when emitter cones are located in the uniform holes. A distorted hole is not arranged in the block or holes which are susceptible to be distorted are shifted or moved to other zones which are not distorted. Such uniform holes can be also obtained by preparing mask patterns of different sizes and by transcribing the mask patterns onto photoresist.

Abstract: There is provided a field emission cold cathode including (a) an electrically conductive substrate, (b) a plurality of emitter cones formed at a surface of the substrate, (c) a gate electrode being formed as a first resistive layer and a second resistive layer formed on the first resistive layer, and (d) an insulating layer sandwiched between the substrate and the gate electrode. The first resestive layer has a resistivity higher than a resistivity of the second resistive layer. The second resistive layer is composed of metal or a metal compound. The gate electrode and the insulating layer are formed with a plurality of openings in alignment with each other, with the emitter cones being formed in the openings in alignment with each other, with the emitter cones which includes a predetermined number of the emitter cones. The substrate is formed with trenches surrounding each of the groups when viewed in a direction of a normal line of the substrate, and trenches are filled with an electrical insulator.

Abstract: An image display device incorporating a quick-action electron source is disclosed. After the power source of the device is turned on, drive signals are outputted from an RGB output circuit to each of the RGB electron sources after it is detected that sufficient deflection current is flowing from horizontal/vertical deflection circuit to the deflection yoke to enable the electron beam to adequately scan the screen.

Abstract: An image display device incorporating a quick-action electron source is disclosed. After the power source of the device is turned on, drive signals are outputted from an RGB output circuit to each of the RGB electron sources after it is detected that sufficient deflection current is flowing from horizontal/vertical deflection circuit to the deflection yoke to enable the electron beam to adequately scan the screen.

Abstract: A field emission cold cathode sends forth uniform emission over the entire emission area and realizes, when applied to a flat screen display device and the like, a uniform brightness of images over the entire display area, providing a high quality field emission type cold cathode. An electron tube is equipped with the cold cathode. The cold cathodes structurally prevent a prolonged electric discharge with the use of trenches. Non-uniformity of resistance, resulting from the difference in extension of the depletion regions in each block divided by the trenches, can be prevented by an arrangement of blocks in which each block divided by trenches is placed to have a prescribed distance from an adjacent block, which makes emission currents in all blocks within the formed emitter area uniform at the time of normal operation, and thereby a good form in which depressions in the block corner sections are well suppressed can be obtained.

Abstract: There is provided a field emission cold cathode including a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an electrically conductive gate electrode layer formed on the insulating layer, a plurality of cavities being formed throughout both the insulating layer and the gate electrode layer, a conical emitter formed on the semiconductor substrate in each one of the cavities, and an insulating wall formed at least in the semiconductor substrate so that the insulating wall surrounds each one of the cavities. The insulating wall partitions the semiconductor substrate into a first group of blocks located at a marginal end of the semiconductor substrate and a second group of blocks located within the first group of blocks. Each one of the first group of blocks is designed to have a greater area than an area of each one of the second group of blocks.

Abstract: A field emission cold cathode element designed with the objects of enabling control of overcurrents that arise at times of discharge without adding a power source or complicating the operating circuits, realizing high-frequency operation and lower power consumption without giving rise to short-circuit damage due to discharge breakdown, and moreover, suppressing increases in element temperature; wherein an n-type region underlying emitters is divided between three n-type semiconductor regions: a first n-type semiconductor region, a second n-type semiconductor region and a third n-type semiconductor region.

Abstract: In a field-emission cathode, a silicon substrate is heated to cause oxygen present therein to form silicon oxide cores. The silicon oxide cores are used as a mask for forming emitters. Because the cores each has a diameter as small as about 0.1 .mu.m, the emitters can be density arranged. A method of producing such a field-emission cathode is also disclosed.

Abstract: There is provided a method of fabricating a field emission cold cathode, including the steps, in sequence, of (a) forming a first insulating layer on a substrate and further forming a first electrode layer on first insulating layer, (b) forming at least one opening in first electrode layer, (c) forming a second insulating layer on first electrode layer and further forming a second electrode layer on second insulating layer, (d) forming at least one opening in second electrode layer, (e) optionally repeating steps (c) and (d) predetermined number of times, (f) forming a cavity extending from an uppermost electrode layer to substrate, (g) forming a first sacrifice layer around a first opening of a first electrode layer, (h) forming a second sacrifice layer around a second opening of a second electrode layer, and (i) forming an emitter electrode on substrate with first sacrifice layer being used as a mask.

Abstract: A field emission cold cathode comprises a silicon substrate, a first insulation layer defining peripheries of a first and second feeder area disposed concentric with each other, a cathode area having a plurality of conical emitters overlying the first insulation layer, and a gate electrode layer having a plurality of openings each for applying electric field to each of the conical emitter. The cathode area has a narrower width than the width of the underlying insulating zone, wherein the cathode area has peripheries apart by fixed distance L from the peripheries of the feeder area. In this configuration, a uniform emitter current can be attained among the emitters to thereby obtain a high luminescence and high resolution CRT.

Abstract: An electron emission device which allows provision of a larger-current, sharper, higher-resolution beam of electrons, has a offset control electrode 10 which is located, on an insulating layer 9, above a gate electrode 7 formed on a plurality of cathodes 4. Each of the centers of the openings of the control electrode 10 is offset from the centers of the openings of the gate electrode 7.

Abstract: An emissive electron source includes a first electrode (12) formed on an insulating substrate (1) in a form of mesh and a resistive coating (13) formed on the entire surface thereof. A plurality of cathodes (14) are disposed at the center of the mesh pattern to have the equal minimum distance between the respective cathodes (14) and the first electrode (12), and thereby improving the capability for limiting short-circuiting current in a resistive coating.

Abstract: The electron gun with a field emission type cathode includes a substrate, a plurality of groups of cathodes disposed on the substrate, each group having a conically shaped electron-emitter, and gate electrodes each associated with each group of the plurality of groups of cathodes for causing the conically shaped electron-emitter to emit electrons by field emission. A control voltage can be applied independently to each group of the plurality of groups of cathodes, and also to the gate electrodes.