Abstract: An output correction apparatus that corrects offset drift of a cylinder internal pressure sensor, and a cylinder internal pressure detection apparatus that accurately detects cylinder internal pressure of an internal combustion engine through use of the output correction apparatus. The cylinder internal pressure detection apparatus includes a detection circuit section which detects a change in the resistance of a piezoresistor element as an electrical signal; an amplification circuit section which amplifies and outputs the electrical signal (output value); and a correction circuit section which corrects the output value. The correction circuit section includes a reset control section which resets the output value of the amplification circuit section to a reference value, and a reset timing detection section which determines a timing of the resetting.

Abstract: A pressure detection apparatus has a pressure-sensitive resistor whose first resistance varies according to pressure and a change of its own temperature, a temperature-sensitive resistor which has a same resistance-temperature coefficient as the pressure-sensitive resistor and whose second resistance varies according to the change of the temperature, a current source supplying first and second constant-currents to the pressure-sensitive and temperature-sensitive resistors respectively, and a pressure signal generation output section. The current source adjusts the first and second constant-currents so that when the pressure is an initial pressure, a reference first voltage appearing across the pressure-sensitive resistor and a reference second voltage appearing across the temperature-sensitive resistor become equal to each other.

Abstract: Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7).

Abstract: A pressure sensor has a Si device having a first main surface that has a bonded area, a second main surface parallel to the first main surface, a pressure-sensitive resistor formed on the first main surface, and a joining assist pattern formed on the first main surface, and a pressing member bonded to the bonded area on the first main surface and compressing the Si device in a thickness direction. The pressure-sensitive resistor has a first bonded section which is placed within the bonded area of the first main surface and is bonded to the pressing member. The joining assist pattern has a second bonded section which is made of the same material as the first bonded section of the pressure-sensitive resistor and is placed within the bonded area of the first main surface and is bonded to the pressing member.

Abstract: An output correction apparatus that corrects offset drift of a cylinder internal pressure sensor, and a cylinder internal pressure detection apparatus that accurately detects cylinder internal pressure of an internal combustion engine through use of the output correction apparatus. The cylinder internal pressure detection apparatus includes a detection circuit section which detects a change in the resistance of a piezoresistor element as an electrical signal; an amplification circuit section which amplifies and outputs the electrical signal (output value); and a correction circuit section which corrects the output value. The correction circuit section includes a reset control section which resets the output value of the amplification circuit section to a reference value, and a reset timing detection section which determines a timing of the resetting.

Abstract: Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7).

Abstract: A pressure detection apparatus has a pressure-sensitive resistor whose first resistance varies according to pressure and a change of its own temperature, a temperature-sensitive resistor which has a same resistance-temperature coefficient as the pressure-sensitive resistor and whose second resistance varies according to the change of the temperature, a current source supplying first and second constant-currents to the pressure-sensitive and temperature-sensitive resistors respectively, and a pressure signal generation output section. The current source adjusts the first and second constant-currents so that when the pressure is an initial pressure, a reference first voltage appearing across the pressure-sensitive resistor and a reference second voltage appearing across the temperature-sensitive resistor become equal to each other.

Abstract: A pressure sensor has a Si device having a first main surface that has a bonded area, a second main surface parallel to the first main surface, a pressure-sensitive resistor formed on the first main surface, and a joining assist pattern formed on the first main surface, and a pressing member bonded to the bonded area on the first main surface and compressing the Si device in a thickness direction. The pressure-sensitive resistor has a first bonded section which is placed within the bonded area of the first main surface and is bonded to the pressing member. The joining assist pattern has a second bonded section which is made of the same material as the first bonded section of the pressure-sensitive resistor and is placed within the bonded area of the first main surface and is bonded to the pressing member.

Abstract: A micro-heater including a semiconductor substrate having a cavity; an insulating layer provided on an upper side of the semiconductor substrate and closing the cavity; and a heater element embedded in a portion of the insulating layer above the cavity and including a metallic material. The insulating layer includes: a compressive stress film made of silicon oxide; and a tensile stress film made of silicon nitride. The tensile stress film has a thickness not less than that of the compressive stress film.

Abstract: A mass flow sensor includes a semiconductor substrate 1, an insulating thin film 2, heaters 311 and 312, temperature measurement resistors 321 and 322, and a protective layer 4. The heaters 311 and 312 are formed on the surface of the insulating thin film 2, and are provided adjacently such that the heater 311 is provided upstream the heater 312 and the heater 312 is provided downstream the heater 311. A cavity 5 is formed below the heaters 311 and 312, and the heaters are thermally insulated from the remaining portion of the semiconductor substrate. The temperature measurement resistors 321 and 322 are formed on the top surface of the insulating thin film 2, and are provided at opposite sides of the heaters 311 and 312, such that the resistors are aligned with respect to the flow passage of a fluid. In the mass flow sensor and the mass flowmeter including the sensor, the flow rate and flow direction of a fluid can be detected by means of merely the heaters 311 and 312, which are active elements.

Abstract: A mass flow sensor includes a semiconductor substrate 1, an insulating thin film 2, heaters 311 and 312, temperature measurement resistors 321 and 322, and a protective layer 4. The heaters 311 and 312 are formed on the surface of the insulating thin film 2, and are provided adjacently such that the heater 311 is provided upstream the heater 312 and the heater 312 is provided downstream the heater 311. A cavity 5 is formed below the heaters 311 and 312, and the heaters are thermally insulated from the remaining portion of the semiconductor substrate. The temperature measurement resistors 321 and 322 are formed on the top surface of the insulating thin film 2, and are provided at opposite sides of the heaters 311 and 312, such that the resistors are aligned with respect to the flow passage of a fluid. In the mass flow sensor and the mass flowmeter including the sensor, the flow rate and flow direction of a fluid can be detected by means of merely the heaters 311 and 312, which are active elements.

Abstract: Where an electrically erasable and programmable non-volatile semiconductor memory element (EEPROM cell) for storing a setting and releasing of the software data protection has already been set in the logic state designating the software data protection setting state, and operation of setting the logical state designating the software data protection setting is not applied to the EEPROM cell even if the address and data for setting the software data protection is input. Further, where the logic state designating the releasing of the software data protection has been set in the electrically erasable and programmable non-volatile semiconductor memory element, the operation of setting the logical state designating the release of the software data protection is not set to the EEPROM cell, even if the address and the data for releasing the software data protection is input.