Abstract: A plurality of sections in a planned travel route include a first basic section for a first automatic driving level, a second basic section for a second automatic driving level lower than the first automatic driving level, and a change preparation section and a main section in the first basic section. An information output control device controls an information output system so as to perform information output in accordance with an output structure allowed in a current section, among a plurality of types of output structures each determined by a combination of output information, an output format, and an output destination device. Allowed output structures for the change preparation section include part of not-allowed output structures for the main section and also include at least part of allowed output structures for the second basic section.

Abstract: An object of the present invention to provide a notification control apparatus and a method for controlling notification that achieve display to a notification target with improved accuracy. A notification control apparatus in the present invention includes the following: a notification message acquiring unit that acquires a notification message for a notification target located around a subject vehicle; a gesture operation recognizing unit that recognizes a gesture of the driver of the subject vehicle; a road projection location determining unit that determines, on the basis of the gesture recognized by the gesture operation recognizing unit, a location for projecting the notification message acquired by the notification message acquiring unit onto a road; and a road projection controller that controls projection of the notification message onto the location determined by the road projection location determining unit.

Abstract: An object of the present invention to provide a notification control apparatus and a method for controlling notification that achieve display to a notification target with improved accuracy. A notification control apparatus in the present invention includes the following: an attribute detecting unit that detects an attribute of an object located around a subject vehicle; an input recognizing unit that recognizes an input message entered by the driver of the subject vehicle; a message converting unit that converts, in accordance with the attribute detected by the attribute detecting unit, the input message recognized by the input recognizing unit into a notification message indicating the same meaning as the input message; and a road projection controller that controls projection of the notification message converted by the message converting unit onto at least part of a road located around the object.

Abstract: It is an object of the present invention to correct a travel plan of a vehicle so as to cause a self-vehicle to move to a relative position with lower travel risk. A travel plan correction device in accordance with the present invention includes a risk calculation section setting unit for setting a risk calculation section, a risk calculation unit for calculating a travel risk value, on the basis of a relative position between a target area and a surrounding vehicle and travel control information of the surrounding vehicle, a risk reduction section extraction unit for extracting a section whose travel risk value is lower than that at a traveling spot, out of the risk calculation section, as a risk reduction section, and a travel plan correction unit for correcting the travel plan so as to cause the self-vehicle to move to the risk reduction section.

Abstract: An automatic driving control plan creation unit creates a plan of an automatic driving section in which a subject vehicle is automatically driven, and a plan of a driving switching preparation section for switching the subject vehicle from automatic driving to manual driving. For each point in the driving switching preparation section, a driving load calculation unit calculates a driving load applied to a driver when the driver manually drives the subject vehicle. A driving switching permission determination unit permits switching of the subject vehicle from automatic driving to manual driving at a point where the driving load is smaller than a predetermined threshold value, and does not permit switching of the subject vehicle from automatic driving to manual driving at a point where the driving load is equal to or larger than the threshold value. A permission standard relaxation unit makes the driving load difficult to exceed the threshold value.

Abstract: An automatic driving control plan creator creates a plan of an automatic driving section where a subject vehicle is automatically driven, and a plan of a driving switching preparation section for switching the subject vehicle from automatic driving to manual driving. A driving load calculator predicts, for each point of the driving switching preparation section, a driving load applied to a driver when the driver manually drives the subject vehicle. A driving switching permission determiner extracts, from the driving switching preparation section, a switching-inhibited section that is a section where switching from automatic driving to manual driving is not permitted, on the basis of the predicted driving load at each point. A driving switching preparation section compensator changes a start point of the driving switching preparation section so as to lengthen the driving switching preparation section in accordance with the length of the switching-inhibited section.

Abstract: [Problem] To resolve segregation of grinding media to thereby enable a large-flow-rate circulation operation while reducing wear of an agitating member and a grinding media separating member.

Abstract: [Problem] To resolve segregation of grinding media to thereby enable a large-flow-rate circulation operation while reducing wear of an agitating member and a grinding media separating member.

Abstract: A semiconductor device wherein return wires corresponding to a plurality of fuse wires are arranged collectively in the same region. Moreover, the return wires are arranged in multiple layers. This arrangement creates a region where no return wire is disposed between the fuse wires, thereby permitting an arrangement of the fuse wires at the minimum wiring pitch. Alternatively, the semiconductor device may include fuse strings arranged in a plurality of stages and a plurality of connection wires for supplying signals to the fuse strings in the plurality of stages, respectively, wherein connection wires for other fuse strings are arranged in a region between adjacent fuse strings.

Abstract: A semiconductor device wherein return wires corresponding to a plurality of fuse wires are arranged collectively in the same region. Moreover, the return wires are arranged in multiple layers. This arrangement creates a region where no return wire is disposed between the fuse wires, thereby permitting an arrangement of the fuse wires at the minimum wiring pitch. Alternatively, the semiconductor device may include fuse strings arranged in a plurality of stages and a plurality of connection wires for supplying signals to the fuse strings in the plurality of stages, respectively, wherein connection wires for other fuse strings are arranged in a region between adjacent fuse strings.

Abstract: A semiconductor element wherein only one of two mutually adjacent electrodes has a split pattern that is formed on the same layer as the other electrode. The split electrode is connected to a wiring layer provided on a separate layer. When the semiconductor element is a MOSFET, the mutually adjacent electrodes are provided on a source diffusion layer and a drain diffusion layer. Specifically, they serve as a source electrode and a drain electrode, respectively. The split electrode is connected to the source diffusion layer or drain diffusion layer through a single contact hole. This allows the parasitic capacitance in the semiconductor element region to be easily reduced even when the semiconductor element, such as a MOSFET, which comprises the semiconductor integrated circuit is miniaturized.

Abstract: A semiconductor memory circuit comprises a plurality of shift redundancy circuits each of which is connected to two of write/read circuits and a redundancy write/read circuit. Also, a plurality of fuse elements are connected to each other in series. One of the fuse elements is connected between one of the shift redundancy circuits and a power supply potential and the others are each connected between two of the shift redundancy circuits. A program circuit is connected to one of the fuse elements disposed at an end portion opposite to the fuse element connected to the power supply potential, and selectively outputs a power supply potential or a ground potential. A plurality of cut fuse detecting circuits are provided which individually detect whether the fuse elements are cut or not, and control each of the write/read circuits and the redundancy write/read circuit in an activated or a inactivated state.

Abstract: In a static semiconductor memory device including a plurality of word lines, a plurality of bit line pairs, at lest one precharging line, a plurality of static memory cells connected to one of the word lines and one of the bit line pairs, and a plurality of precharging circuits, connected to the precharging line and one of the bit line pairs, thus charging the one of the bit line pairs, each of the precharging circuits has a similar configuration to one of the static memory cells.