Abstract: An amorphous solar cell having a p-i-n (or n-i-p) structure, in which either or both of the p and n layers are of a double layer structure, including an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers are of the same conductivity type and the amorphous semiconductor layer is located at the side of the i layer.

Abstract: In a hetero-face type solar cell, an impurity concentration distribution is formed in the cell element so as to provide an accelerative electric field therein. As a result, electrons are accelerated by the field toward the PN junction, and even under the application of radiation to the cell, a highly efficient solar cell may be achieved.

Abstract: A solar cell of high transducing efficiency is provided in the form of a multi-cell laminated construction having n-type light receiving layers. A non-doped layer of the cell on the incident light side has an energy-gap higher than that of the lower cells.

Abstract: An n collector is sandwiched between an n.sup.+ collector a p base including an n.sup.+ emitter and includes a p.sup.+ gate connected to the base. Another n.sup.+ collector is disposed in the n.sup.- collector at the junction between the n.sup.- and n.sup.+ collector to oppose to the emitter and shaped to be parallel to a shape of a spread edge of a depletion layer from the gate. Alternatively an n collector may be substituted for the p base and include the p base from which the p.sup.+ gate extends through the n collector into the n.sup.- collector.

Abstract: This invention relates to a thyristor and more particularly to improvements to increase the withstand voltage and increase the control speed of a thyristor.