Abstract: A coil component includes: a coil embedded in a substrate body and having a winding part constituted by a wound conductor; wherein the substrate body has: a first region sandwiched between one end surface of the substrate body and a plane parallel with the one end surface and running through a portion of a first external electrode farthest away from the one end surface; a second region sandwiched between another end of the substrate body and a plane parallel with the another end surface and running through a portion of a second external electrode farthest away from the another end surface; and a third region between the first region and the second region; and the winding part is provided in the third region, and also in the first region where it is wound by one turn or more.

Abstract: A coil component includes: a coil embedded in a substrate body and having a winding part constituted by a wound conductor; wherein the substrate body has: a first region sandwiched between one end surface of the substrate body and a plane parallel with the one end surface and running through a portion of a first external electrode farthest away from the one end surface; a second region sandwiched between another end of the substrate body and a plane parallel with the another end surface and running through a portion of a second external electrode farthest away from the another end surface; and a third region between the first region and the second region; and the winding part is provided in the third region, and also in the first region where it is wound by one turn or more.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: A film deposition system comprises a chamber having an internal space, a support part provided in the internal space of the chamber for supporting a substrate, a gas supply part supplying gas to the internal space and a heating part heating the substrate. After an oxide film is formed on the substrate, the gas supply part supplies oxygen or a gas mixture of oxygen and ozone to the internal space while the heating part heats the substrate. Thus provided is a film deposition system capable of flattening an oxide film.

Abstract: A film deposition system comprises a chamber having an internal space, a support part provided in the internal space of the chamber for supporting a substrate, a gas supply part supplying gas to the internal space and a heating part heating the substrate. After an oxide film is formed on the substrate, the gas supply part supplies oxygen or a gas mixture of oxygen and ozone to the internal space while the heating part heats the substrate. Thus provided is a film deposition system capable of flattening an oxide film.

Abstract: It is possible to obtain a semiconductor device with an element isolation structure showing a good isolation characteristic by filing an interior of a minute trench with a good quality insulating film free of a defect such as a void, and a manufacturing method therefor. The semiconductor device includes a semiconductor substrate and an isolation insulator. A trench is formed on a main surface of the semiconductor substrate. The isolation insulator is formed in an interior of the trench using a thermal oxidation method to isolate element forming regions from each other on the main surface of the semiconductor substrate. The isolation insulator is a lamination body formed by a plurality of oxide film layers.

Abstract: A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

Abstract: An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.

Abstract: An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.

Abstract: A semiconductor device and method of manufacturing the same includes the steps of forming silicon nitride films including much silicon than a stoichiometric silicon nitride (Si.sub.3 N.sub.4) and which will be an anti-reflection film, forming a resist film on the plasma silicon nitride films and, and concurrently patterning plasma silicon nitride films and conductive layers and using the resist film as a mask. As a result, high integration of the semiconductor device can be attained.

Abstract: A silicon layer having semispherical protrusions of about 100 nm is formed as a lower electrode of a capacitor by low pressure vapor deposition method. A silicon oxide film is formed by oxidizing the surface of this silicon layer. The intervals between the rough portions of the silicon layer are increased by removing this silicon oxide film. Thereafter, a dielectric layer and an upper electrode are formed. In other methods, after the formation of the silicon layer having the roughness, thermal treatment is continuously carried out in oxygen-free atmosphere to increase radius of curvature of the roughness of the silicon layer. Thereafter, the dielectric layer and the upper electrode are formed.

Abstract: A lower electrode of a stacked capacitor in accordance with the present invention is formed of a silicon layer formed by low pressure CVD method. The silicon layer is formed by thermal decomposition of monosilane gas at a prescribed temperature. By setting partial pressure of the monosilane gas and formation temperature at prescribed values, the silicon layer is formed to be in a transitional state between poly crystal and amorphous. Such silicon layer has large concaves and convexes on the surface thereof. Consequently, opposing areas of the electrodes of the capacitor can be increased, and therefore electrostatic capacitance of the capacitor is also increased.