Abstract: An object of the present invention is to provide a method for purifying efficiently and easily a 226Ra-containing solution obtained when 225Ac is produced from a 226Ra target, a method for producing a 226Ra target by using the purified 226Ra-containing solution obtained by the above purification method, and a method for producing 225Ac including these above methods. The method for purifying a 226Ra-containing solution according to the present invention is characterized by including an adsorption step (R1) of allowing 226Ra ions to adsorb onto a carrier having a function of selectively adsorbing divalent cations by bringing a 226Ra-containing solution (a) into contact with the carrier under an alkaline condition; and an elution step (R2) of eluting the 226Ra ions from the carrier under an acidic condition.

Abstract: A technology is provided to form p-type regions and to effectively reduce a contact resistance between the p-type region and an electrode. One embodiment of a nitride semiconductor device manufacturing method may include a magnesium layer formation step of forming a magnesium layer that comprises magnesium as a major component on a surface of a nitride semiconductor substrate. The method may include an annealing step of annealing the nitride semiconductor substrate on which the magnesium layer is formed.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

Abstract: One aspect of the present invention relates to a recovery method of 226Ra, and the recovery method of 226Ra includes a step (A1) of immersing a solid-state 226Ra containing substance and a carrier having a function of adsorbing 226Ra ions in a processing solution, and then irradiating the processing solution with ultrasonic waves.

Abstract: A method for manufacturing a group III nitride semiconductor substrate, that includes: growing a first AlN buffer layer on an Si substrate at a first growth temperature; growing a second AlN buffer layer on the first AlN buffer layer at a second growth temperature higher than the first growth temperature; and growing a group III nitride semiconductor layer on the second AlN buffer layer, wherein an Al raw material and an N raw material are alternately repeatedly fed in the growing the first AlN buffer layer.

Abstract: A method for producing an 225Ac solution includes a step (I) of irradiating a 226Ra target with particles to generate two or more actinium radioisotopes (Ac) including at least 225Ac, a step (II) of dissolving the 226Ra target after the aforementioned step to obtain a solution (1), a step (III) of separating 226Ra and Ac contained in the solution (1) to obtain a solution (2), a step (IV) of allowing Ac contained in the solution (2) other than 225Ac to decay to obtain a solution (3), and a step (V) of separating Ra and Ac contained in the solution (3) to obtain a solution (4). The solution (4) is used to produce a medicine that contains, as an active ingredient, a conjugate between a chelating agent that has formed a complex with 225Ac, and a targeting agent.

Abstract: A method for producing 225Ac solution includes steps (I) to (III): a step (I) of passing a solution containing 226Ra and 225Ac through a solid-phase extraction agent (a) that contains a compound represented by formula (A) so as to cause the solid-phase extraction agent (a) to retain 225Ac; a step (II) of passing a liquid containing an eluate, which is obtained by eluting the retained 225Ac from the solid-phase extraction agent (a), through a solid-phase extraction agent (b) that contains a compound represented by formula (B) so as to cause the solid-phase extraction agent (b) to retain 225Ac; and a step (III) of eluting the retained 225Ac from the solid-phase extraction agent (b) to obtain an 225Ac solution.

Abstract: A method for producing an 225Ac solution includes a step (I) of irradiating a 226Ra target with particles to generate two or more actinium radioisotopes (Ac) including at least 225Ac, a step (II) of dissolving the 226Ra target after the aforementioned step to obtain a solution (1), a step (III) of separating 226Ra and Ac contained in the solution (1) to obtain a solution (2), a step (IV) of allowing Ac contained in the solution (2) other than 225Ac to decay to obtain a solution (3), and a step (V) of separating Ra and Ac contained in the solution (3) to obtain a solution (4). The solution (4) is used to produce a medicine that contains, as an active ingredient, a conjugate between a chelating agent that has formed a complex with 225Ac, and a targeting agent.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

Abstract: A method for producing 225A including: a method (X) for purifying a 226Ra-containing solution, including an adsorption step of allowing a 226Ra ion to adsorb onto a carrier having a function of selectively adsorbing a divalent cation by bringing a 226Ra-containing solution into contact with the carrier under an alkaline condition, and an elution step of eluting the 226Ra ion from the carrier under an acidic condition; a method for producing a 226Ra target, including an electrodeposition liquid preparation step of preparing an electrodeposition liquid by using a purified 226Ra-containing solution obtained by the method (X), and an electrodeposition step of electrodepositing a 226Ra-containing substance on a substrate by using the electrodeposition liquid; and a step of irradiating a 226Ra target produced by the method for producing a 226Ra target with at least one selected from a charged particle, a photon, and a neutron by using an accelerator.

Abstract: A stacked body may include a support, a buffer layer, and an electrode layer, in this order, wherein the buffer layer may include one or more metals selected from the group consisting of Ga, Al, In, and Zn, and oxygen, the electrode layer comprises an oxide of magnesium and an oxide of zinc, and the electrode layer has a half width of a diffraction peak observed at 2?=34.8±0.5 deg in X-ray diffraction measurement of 0.43 deg or smaller.

Abstract: A method for producing an 225Ac solution includes a step (I) of irradiating a 226Ra target with particles to generate two or more actinium radioisotopes (Ac) including at least 225Ac, a step (II) of dissolving the 226Ra target after the aforementioned step to obtain a solution (1), a step (III) of separating 226Ra and Ac contained in the solution (1) to obtain a solution (2), a step (IV) of allowing Ac contained in the solution (2) other than 225Ac to decay to obtain a solution (3), and a step (V) of separating Ra and Ac contained in the solution (3) to obtain a solution (4). The solution (4) is used to produce a medicine that contains, as an active ingredient, a conjugate between a chelating agent that has formed a complex with 225Ac, and a targeting agent.

Abstract: An object of the present invention is to provide a method for purifying efficiently and easily a 226Ra-containing solution obtained when 225Ac is produced from a 226Ra target, a method for producing a 226Ra target by using the purified 226Ra-containing solution obtained by the above purification method, and a method for producing 225Ac including these above methods. The method for purifying a 226Ra-containing solution according to the present invention is characterized by including an adsorption step (R1) of allowing 226Ra ions to adsorb onto a carrier having a function of selectively adsorbing divalent cations by bringing a 226Ra-containing solution (a) into contact with the carrier under an alkaline condition; and an elution step (R2) of eluting the 226Ra ions from the carrier under an acidic condition.

Abstract: A method for producing 225A including: a method (X) for purifying a 226Ra-containing solution, including an adsorption step of allowing a 226Ra ion to adsorb onto a carrier having a function of selectively adsorbing a divalent cation by bringing a 226Ra-containing solution into contact with the carrier under an alkaline condition, and an elution step of eluting the 226Ra ion from the carrier under an acidic condition; a method for producing a 226Ra target, including an electrodeposition liquid preparation step of preparing an electrodeposition liquid by using a purified 226Ra-containing solution obtained by the method (X), and an electrodeposition step of electrodepositing a 226Ra-containing substance on a substrate by using the electrodeposition liquid; and a step of irradiating a 226Ra target produced by the method for producing a 226Ra target with at least one selected from a charged particle, a photon, and a neutron by using an accelerator.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel. The device comprises a wafer holder arranged in the reactor vessel. The device comprises a first material gas supply pipe configured to supply first material gas to the reactor vessel. The device comprises a second material gas supply pipe configured to supply second material gas, which is to react with the first material gas, to the reactor vessel. The device comprises a particular gas supply pipe having a solid unit arranged on a supply passage. The device comprises a first heater unit configured to heat the solid unit to a predetermined temperature or higher. The solid unit comprises a mother region and a first region arranged continuously within the mother region. The mother region is a region that does not decompose at the predetermined temperature. The first region is a region that decomposes at the predetermined temperature and contains Mg.

Abstract: A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10?2 S/cm or more.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel. The device comprises a wafer holder arranged in the reactor vessel. The device comprises a first material gas supply pipe configured to supply first material gas to the reactor vessel. The device comprises a second material gas supply pipe configured to supply second material gas, which is to react with the first material gas, to the reactor vessel. The device comprises a particular gas supply pipe having a solid unit arranged on a supply passage. The device comprises a first heater unit configured to heat the solid unit to a predetermined temperature or higher. The solid unit comprises a mother region and a first region arranged continuously within the mother region. The mother region is a region that does not decompose at the predetermined temperature. The first region is a region that decomposes at the predetermined temperature and contains Mg.

Abstract: A manufacturing method allows growth of a group III nitride semiconductor layer on a Si substrate with an AlN buffer layer interposed between same, so as to suppress group III material from diffusing into the Si substrate. The group III nitride semiconductor substrate manufacturing method includes: a step of forming an AlN coating on the inside of a furnace; steps of installing an Si substrate in the furnace covered with the AlN coating and forming an AlN buffer layer on the Si substrate; and a step of forming a group III nitride semiconductor layer on the AN buffer layer.

Abstract: Diffusion of a group III material into an Si substrate is suppressed during the time when a group III nitride semiconductor layer is grown on the Si substrate, with an AlN buffer layer being interposed therebetween. A method for manufacturing a group III nitride semiconductor substrate comprises: a step for growing a first AlN buffer layer on an Si substrate; a step for growing a second AlN buffer layer on the first AlN buffer layer at a temperature higher than a growth temperature of the first AlN buffer layer; and a step for growing a group III nitride semiconductor layer on the second AlN buffer layer. The growth temperature of the first AlN buffer layer is 400-600° C.