Abstract: Main lifter pins and sub-lifter pins are arranged on the top surface of a plate to support a rectangular frame area of a glass substrate of a liquid crystal display. The rectangular frame area is an area surrounding a rectangular center area which is a surface area requiring processing. The main lifter pins and sub-lifter pins cooperate to push up the substrate from the top surface of the plate after a surface processing of the substrate on the plate is completed. The main lifter pins and the sub-lifter pins are arranged to contact a pair of shorter sides and a pair of longer sides of the rectangular frame area, respectively. The substrate is easily removed from the plate without being bent due to its own weight. Then, the main lifter pins further push up the substrate to a level at which the substrate is transferred to a transporter robot.

Abstract: An apparatus for removing a treating liquid from main surfaces of a substrate that has undergone a wet surface treatment, includes a transport device for transporting the substrate, a first gas jetting device having a first jet opening for jetting a gas to a first main, upper surface of the substrate transported by the transport device, and a liquid removing chamber for preventing the treating liquid removed from the main surfaces of the substrate from scattering to ambient, the liquid removing chamber having a substrate inlet and a substrate outlet. A partition is mounted in the liquid removing chamber, with an upper end thereof contacting either an upper wall, a rear wall or a front wall of the liquid removing chamber. The partition extends between opposite side walls of the chamber parallel to direction of substrate transport.

Abstract: A single transport path for transporting a substrate between the cassettes and a plurality of processing units, is arranged between the cassette storing means and the processing means. Hence, it is possible to skip some processing units or to change the order of the processing units easily, with simplifying the construction of the apparatus. Furthermore, the single transport path causes to reduce the space for transporting the substrate.

Abstract: A substrate processing apparatus comprises a processing part and a transferring part. In the processing part there are a plurality of stages in which a plurality of processing units are arranged in a row along a horizontal direction and the stages are arranged in a stack vertically. Thus, the processing units are arranged in matrix. The transferring part includes a plurality of horizontal transferring devices each movable in the horizontal direction and a vertical transferring device movable in the vertical direction. Hence, a substrate is movable both horizontally and vertically to be transferred to the desired processing unit.

Abstract: There is provided a new method of improving properties of the surface of an internal combustion engine valve made from titanium alloy, which comprises; the steps of (a) forming a surface undercoat layer of nickel on a surface of the engine valve; (b) heating the resulting nickel undercoated valve in vacuum or in an atmosphere of inert gas, at the temperature of 450.degree. C. to 600.degree. C., for one to four hours; (c) forming further a three component coat layer comprising nickel, phosphorus and particles of material selected from the group consisting of silicone carbide, silicone nitride, boron nitride, and the combination thereof, on the surface of the nickel undercoat layer; and (d) heating the resulting coat layer formed on the nickel undercoat layer, at the temperature of 350.degree. C. to 550.degree. C., for one to four hours, so as to make the particles of ceramic material uniformly and homogeneously dispersed in said coat layer.

Abstract: There is provided a new structure of an engine valve made from titanium alloy, having three component coat surface layer formed on the surface of the reciprocating shaft thereof, wherein the composition of the three component coat surface layer comprises nickel, phospher and particles of material selected from the group consisting of silicone carbide, silicone nitride, boron nitride, and the combination thereof; said particles are uniformly dispersed in said coat surface layer; and said coat surface layer is formed via a binding layer or directly on the surface of the shaft.

Abstract: An apparatus for heat-treating substrates includes a plurality of heat-treating units arranged in vertical stages, and at least one hollow column for supporting the heat-treating units. Each heat-treating unit has an exhaust line communicating with the column to exhaust gases from the heat-treating units through the column by suction.

Abstract: A titanium-containing metallic material having a high heat-resistant and abrasion resistant surface is produced by (A) cleaning a titanium-containing metallic material, (B) first plating the cleaned surface of the metallic material with Cu or Ni by a strike or flash plating method, (C) second plating the first plated surface of the Ti-containing material with Ni, Ni-P alloy or a composite material comprising a Ni-P alloy matrix and fine ceramic particles dispersed in the matrix by an electroplating method, (D) non-oxidatively heat treating the second plated Ti-containing material at 450.degree. C.

Abstract: A radiation-curable coating composition adapted for the coating of optical glass fiber, comprising an ethylenically unsaturated polyurethane which is the reaction product of:(A) a polyether diol having a molecular weight in the range of 200 to 8,000 and a structural unit represented by the formula: ##STR1## in which R.sup.1 -R.sup.4 are each independently selected from hydrogen and an alkyl group containing from 1-4 carbon atoms, such as a polymer of copolymer of methyl tetrahydrofuran;(B) a polyisocyanate compound, preferably a diisocyanate; and(C) a polymerizable ethylenically unsaturated compound having a single hydroxy group, such as a monohydric acrylate;there being employed per equivalent of hydroxy in component (C) from 1.1 to 2 equivalents of said polyisocyanate with the balance of the isocyanate groups being reacted waith the hydroxy groups of said diol.

Abstract: An apparatus for the heat treatment of a substrate comprises a heat treating plate for heating or cooling a substrate, three holes for one substrate provided on the surface of the heat treating plate whose position is selected to suitably place the substrate, and three balls respectively in the three holes with the diameter of the balls being slightly larger than the depth of the holes. The substrate is retained on the three balls for heat treatment.

Abstract: A wafer carrying apparatus comprises a heat treatment plate for heat treating a wafer, the treatment plate having a plurality of through-holes spaced apart from each other at a prescribed distance. A plurality of pins are disposed to protrude from and to be retractable below the main surface of the heat treatment plate, through the through-holes. The tips of pins are kept at the same height and a pair of spaced elongated members, for example wires, whose relative spacing and position are changeable are effective for carrying and placing the wafer onto and removing the wafer from atop the pins.

Abstract: There is disclosed acrylate-terminated oligomers which are radiation-curable and which can be pigmented with magnetizable power to cure on electron beam exposure to provide superior magnetic recording structures. These oligomers include sulfonic acid groups which improve pigment wetting and which can be included in amide-containing compounds.

Abstract: A novel raddery organopolysilsesquioxane having lower alkyl groups and alkenyl groups as the side chains and, if necessary, having aryl groups and/or hydrogen atoms bonded as the side chains can be produced by adding water to a solution of a lower-alkyltrihalogenosilane, an alkenyltrihalogenosilane, and, if necessary, an aryltrihalogenosilane and/or a trihalogenosilane in an organic solvent, and heating the resulting mixture. The aforesaid organopolysilsesquioxane can be used for forming a patterned surface-protecting layer or insulating layer for a semiconductor device, in the form of a mixture with a compound which generates crosslinking-reaction-active species upon irradiation with light or an ionizing radiation.

Abstract: A laddery lower alkylpolysilsesquioxane represented by the formula: ##STR1## wherein R and R' represent same or different lower alkyl groups, and n represents an average degree of polymerization, said laddery lower alkylpolysilsesquioxane having a heat-resistant thin film-formability, characterized in that 15 to 30% by weight of the lower alkylpolysilsesquioxane is occupied by the portion having a standard polystyrene-reduced molecular weight of 20,000 or less as measured by gel permeation chromatography. Said silicone resin in which R and R' are methyl is prepared by dissolving CH.sub.3 SiCl.sub.3 in a ketone or an ether, adding water to this solution with stirring to hydrolyze CH.sub.3 SiCl.sub.3, condensing the hydrolyzate and, if necessary, subjecting the resulting condensate to a treatment for adjusting the proportion of the low molecular weight portion in the product.

Abstract: A process for treating an acetylene polymer or a doped acetylene polymer, which comprises plasma-polymerizing a gasifiable organic compound under plasma-excitation under reduced pressure, thereby forming a polymer film on the solid surface of an acetylene polymer or a doped acetylene polymer placed in said polymerization reaction system. This process can prevent the acetylene polymer or doped acetylene polymer from being deteriorated owing to oxidation.

Abstract: Doped acetylene polymers are produced by immersing an acetylene polymer under an inert gas atmosphere in an organic solvent solution of a dopant selected from the group consisting of a platinum group metal complex, a carbonium salt, an oxonium salt and a parabenzoquinone derivative. According to this process, a doped acetylene polymer having any desired electrical conductivity can be produced and the doped acetylene polymer thus obtained has excellent properties as an organic semiconductor material for solar batteries, various sensors, etc.