Abstract: Affords a compound semiconductor substrate packaging method for preventing oxidation of the surface of compound semiconductor substrates.

Abstract: Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semiconductor-substrate polishing method includes a preparation step (S10), a first polishing step (S20), and a second polishing step (S30). In the preparation step (S10), a compound semiconductor substrate is prepared. In the first polishing step (S20), the compound semiconductor substrate is polished with a chloric polishing agent. In the second polishing step (S30), subsequent to the first polishing step (S20), a polishing operation utilizing an alkaline aqueous solution containing an inorganic builder and having pH of 8.5 to 13.0 inclusive is performed.

Abstract: A method for working a nitride semiconductor substrate, comprising the steps of: preparing a disk-shaped nitride semiconductor substrate comprising a plurality of striped regions having defect concentration regions in which crystal defect density is higher than in surrounding low defect regions; and forming a cut-out at a specific location along the edge of the nitride semiconductor substrate, using as a reference the direction in which at least one from among the plurality of striped regions extends.

Abstract: A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle ? by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

Abstract: Affords a compound semiconductor substrate packaging method for preventing oxidation of the surface of compound semiconductor substrates.

Abstract: Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semiconductor-substrate polishing method includes a preparation step (S10), a first polishing step (S20), and a second polishing step (S30). In the preparation step (S10), a compound semiconductor substrate is prepared. In the first polishing step (S20), the compound semiconductor substrate is polished with a chloric polishing agent. In the second polishing step (S30), subsequent to the first polishing step (S20), a polishing operation utilizing an alkaline aqueous solution containing an inorganic builder and having pH of 8.5 to 13.0 inclusive is performed.

Abstract: A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle ? by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

Abstract: A method for working a nitride semiconductor substrate, comprising the steps of: preparing a disk-shaped nitride semiconductor substrate comprising a plurality of striped regions having defect concentration regions in which crystal defect density is higher than in surrounding low defect regions; and forming a cut-out at a specific location along the edge of the nitride semiconductor substrate, using as a reference the direction in which at least one from among the plurality of striped regions extends.

Abstract: Compound-semiconductor-wafer manufacturing whereby particle adherence, and obverse-surface oxidization and alteration are slight and the use of organic solvents is reduced. An adsorption pad is bonded to a polishing plate, and a wafer being adsorbed onto the adsorption pad without using wax is polished and thereafter stored within purified water without drying. Since storage is within purified water, particle adherence, and obverse-surface oxidization and alteration turn out to be slight, yielding a high-quality wafer. In the cleaning procedure following the aquatic storage, organic solvent washing is omitted. This allows the use/waste volume of noxious organic solvent to be reduced.

Abstract: Compound-semiconductor-wafer manufacturing whereby particle adherence, and obverse-surface oxidization and alteration are slight and the use of organic solvents is reduced. An adsorption pad is bonded to a polishing plate, and a wafer being adsorbed onto the adsorption pad without using wax is polished and thereafter stored within purified water without drying. Since storage is within purified water, particle adherence, and obverse-surface oxidization and alteration turn out to be slight, yielding a high-quality wafer. In the cleaning procedure following the aquatic storage, organic solvent washing is omitted. This allows the use/waste volume of noxious organic solvent to be reduced.