Abstract: According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method includes preparing a first substrate on which multiple projections distributed in a two-dimensional fashion are formed. The method includes stacking a first film over the multiple projections on the first substrate. The method includes stacking a second film on a second substrate. The method includes bonding a principal surface of the first film which is disposed on an opposite side of the first substrate to a principal surface of the second film which is disposed on an opposite side of the second substrate. The method includes performing irradiation with a laser beam from the first substrate. The method includes peeling the first substrate. A diameter of a spot area formed by the laser beam is larger than an average pitch between the projections arranged on the principal surface of the first substrate.

Abstract: A SIMOX wafer is produced by implanting an oxygen ion, in which a hydrogen ion is implanted at a dose of 1015-1017/cm2 before or after the step of the oxygen ion implantation.

Abstract: A method of manufacturing a semiconductor substrate, in which a silicon layer is provided on a buried oxide film, includes preparing a base substrate having a seed layer of the silicon layer on the buried oxide film with a film thickness equal to or more than 1 nm and equal to or less than 100 nm, and epitaxially growing the seed layer at a temperature equal to or more than 1000° C. and equal to or less than 1300° C. so as to form the silicon layer with a film thickness equal to or more than 1 ?m and equal to or less than 20 ?m.

Abstract: A SIMOX wafer is produced by implanting an oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which an atmosphere in at least an end stage of the high-temperature annealing treatment is an Ar or N2 atmosphere containing an oxygen of more than 3 volume % but not more than 10 volume %.

Abstract: A SIMOX wafer manufacturing method which is capable of providing etching conditions to prevent surface defects (divots) from being spread. The method includes an oxygen implantation process and a high temperature annealing step for forming a BOX layer, a front surface oxide film etching process to treat a front surface of the wafer at an area in which oxygen is implanted, and a rear surface oxide film etching process to treat a rear surface of the wafer, and oxide film etching conditions in the front and rear oxide film etching processes are controlled differently.

Abstract: A SIMOX wafer is produced by implanting an oxygen ion, in which a hydrogen ion is implanted at a dose of 1015?1017/cm2 before or after the step of the oxygen ion implantation.

Abstract: A SIMOX wafer is produced at an oxygen ion implantation step and a high-temperature annealing step, wherein an oxide film is formed on a surface of a wafer prior to the oxygen ion implantation and then the oxygen ion implantation is conducted through the oxide film.

Abstract: A SIMOX wafer is produced by implanting oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which a SOI film having a thickness thicker than a target SOI film thickness is previously formed and a final adjustment of the SOI film thickness is carried out at an etching step arranged separately from a cleaning step.

Abstract: A SIMOX wafer is produced by implanting an oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which an atmosphere in at least an end stage of the high-temperature annealing treatment is an Ar or N2 atmosphere containing an oxygen of more than 3 volume % but not more than 10 volume %.

Abstract: A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.

Abstract: A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.

Abstract: A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 ? to 500 ? in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.

Abstract: This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.

Abstract: This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.

Abstract: A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.

Abstract: A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.

Abstract: A lubrication system for a bearing of a machine. The system comprises an oil tank, and an oil supply pipe for supplying the lubricant oil from the oil tank to the bearing. The system further comprises an outlet pipe for guiding the lubricant oil from the bearing substantially vertically downward so that an outlet pipe oil level may be formed in the outlet pipe. The system further comprises an oil returning mother pipe for guiding the lubricant oil from the outlet pipe to the tank. The oil returning mother pipe includes a substantially horizontal part and a weir or a flow resistance disposed close to the tank so that substantially all portion of the substantially horizontal part may be maintained full of lubricant oil.

Abstract: A lubrication system for a bearing of a machine. The system comprises an oil tank, and an oil supply pipe for supplying the lubricant oil from the oil tank to the bearing. The system further comprises an outlet pipe for guiding the lubricant oil from the bearing substantially vertically downward so that an outlet pipe oil level may be formed in the outlet pipe. The system further comprises an oil returning mother pipe for guiding the lubricant oil from the outlet pipe to the tank. The oil returning mother pipe includes a substantially horizontal part and a weir or a flow resistance disposed close to the tank so that substantially all portion of the substantially horizontal part may be maintained full of lubricant oil.

Abstract: The present invention provides a silicon wafer free of vacancy agglomerates and interstitial agglomerate; wherein the silicon wafer has a defect density of an oxide film of 0.1 piece/cm2 or less, when the oxide film having a thickness of 5 to 25 nm is formed on the surface of the wafer and a DC voltage of 10 MV/cm is applied via the oxide film for 100 seconds, and wherein the silicon wafer has an in-plane dispersion of 20% or less of a p-n junction leakage current in a p-n junction area of 1 mm2 or more of a p-n junction portion when the p-n junction portion is formed on the surface of the wafer. The present silicon wafer is capable of achieving a higher performance, higher yield and uniformity of characteristics of semiconductor devices comparable to a wafer provided with a pure epitaxial layer, without deteriorating the gettering ability of the silicon wafer.

Abstract: A ticket processing apparatus for reusable tickets, having a thermal print portion capable of repeatedly printing by heating at a predetermined write temperature and deleting the printed characters and the like by heating at a deletion temperature, and also capable of setting information about the number of printing times, wherein a control unit 23 causes a magnetic read head 10 to read reservation information and information about the number of printing done from a magnetic recording stripe 1b of a reservation airline ticket 1, and also causes a thermal head 8 to heat a thermal print portion 1a of the reservation airline ticket 1 at a deletion temperature to delete printed reservation information of the thermal print portion 1a, and when the number of times printing done of the reservation airline ticket 1 is less than a preset value, causes the thermal head 8 to print real-ticket information on the thermal print portion 1a and also causes information about the number of printing done added with "1" to be wr