Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

Abstract: There is provided a production apparatus for a gallium oxide crystal using the vertical Bridgman method and a production method using the production apparatus. A production apparatus for a gallium oxide crystal using a vertical Bridgman method including: a furnace body formed of a heat resistant material; a crucible shaft freely movable vertically, being extended in the furnace body, and penetrating through a bottom portion of the furnace body in the vertical direction; a crucible for housing a material of a gallium oxide crystal, being disposed on the crucible shaft; a body heater for heating the crucible, being disposed around a periphery of the crucible; and an annealing chamber for annealing the crucible, being disposed under the furnace body, and being connected to a furnace space in the furnace body.

Abstract: There is provided a production apparatus of a gallium oxide crystal using a resistance heater, the heater provided therein being capable of being provided at a low cost and capable of suppressing deformation and breakage due to heat. The production apparatus for a gallium oxide crystal according to one or more aspects of the present invention includes a furnace body constituted by a heat resistant material, a crucible disposed in the furnace body, and a heater disposed around the crucible, the heater being a resistance heater including a heating part and a conductive part having a larger diameter than the heating part connected to each other, the heating part being constituted by a material having heat resistance to 1,850° C., the conductive part being constituted by a material having heat resistance to 1,800° C.

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

Abstract: The recorder includes: a converter acquiring external sound and converting the sound into a first signal; an amplifier amplifying the first signal to generate a second signal; a recording unit recording the second signal; a display unit displaying a level of the second signal; and a controller controlling the amplifier and the display unit. The amplifier includes an ALC (automatic level control) unit adjusting an amplification degree for amplifying the first signal according to the level of the second signal. The controller allows a choice of whether or not to cause the ALC unit to operate, allows a choice of whether to display or hide the level of the second signal on the display unit when the automatic level control unit operates, and keeps the level of the second signal displayed on the display unit when the automatic level control unit does not operate.

Abstract: The recorder includes: a converter acquiring external sound and converting the sound into a first signal; an amplifier amplifying the first signal to generate a second signal; a recording unit recording the second signal; a display unit displaying a level of the second signal; and a controller controlling the amplifier and the display unit. The amplifier includes an ALC (automatic level control) unit adjusting an amplification degree for amplifying the first signal according to the level of the second signal. The controller allows a choice of whether or not to cause the ALC unit to operate, allows a choice of whether to display or hide the level of the second signal on the display unit when the automatic level control unit operates, and keeps the level of the second signal displayed on the display unit when the automatic level control unit does not operate.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: A method for adjusting temperature of a machining liquid, e.g., slurry, etching liquid, by passing the machining liquid through a heat exchanger. The heat exchanger, which adjusts the temperature of the machining liquid, includes a ceramic heat exchanging tube which is made by baking silicon carbide (SiC).

Abstract: A method for adjusting temperature of a machining liquid, e.g., slurry, etching liquid, by passing the machining liquid through a heat exchanger. The heat exchanger, which adjusts the temperature of the machining liquid, includes a ceramic heat exchanging tube which is made by baking silicon carbide (SiC).

Abstract: The heat exchanger of the present invention is capable of easily adjusting temperature of a machining liquid, e.g., slurry, etching liquid. The heat exchanger of the present invention, which adjusts temperature of the machining liquid, comprises a ceramic heat exchanging tube, which is made by baking silicon carbide (SiC).

Abstract: The disk edge polishing machine is capable of polishing an inner edge of a center hole of a disk and an outer edge thereof. In the disk edge polishing machine, a sucking member has a cylindrical end section. The sucking member sucks the disk by the cylindrical end section and exposes the inner edge and the outer edge of the disk. The sucking member spins together with the disk. An outer polishing member polishes the outer edge of the disk. An inner polishing member is inserted into the center hole and simultaneously polishes the inner edge of the disk. A first driving mechanism relatively moves the outer polishing member and the sucking member close to and away from the outer edge of the disk along a predetermined course. A second driving mechanism relatively moves the inner polishing member and the sucking member close to and away from the inner edge of the disk along another predetermined course extended from the predetermined course.

Abstract: A rotor of a disc brake is coated with a nickel coating containing ceramic particles in a dispersed state and having a thickness not less than 2 .mu.m, thereby improving corrosion resistance while minimizing torque fluctuation of the rotor during braking. The nickel coating is formed on the surface of the rotor by composite plating in which nickel and the ceramic particles are simultaneously electrodeposited on the surface of the rotor. An annular jig surrounding the outer periphery of the rotor is used to insure a uniform coating thickness.

Abstract: A personal-call communication system wherein a personal identification number is assigned to each telephone user, and an arbitrary person is called by wireless by dialing a corresponding personal calling number. The called person sets an ID-card-type portable device memorizing one's own personal identification information in a card reader of a telephone set, and communicates with the calling party over the wire system via an exchange. The system allows a direct call of an individual person, who in turn has a choice as to whether or not a response should be taken depending on the calling party whose name is indicated to the called party.

Abstract: An anti-skid device is provided with valving which establishes a first normal pressure transmission path between the master cylinder and the wheel brake cylinders via which an anti-skid pressure reduction can be effected to prevent lock up of the wheels and a second fail safe pressure transmission path which is established in place of the first path upon a malfunction or the like in a source of hydraulic pressure associated with the anti-skid device. The valving is characterized by a valve which is held open (establishing the first pressure transmission path) by abutment with a spool formed with a bore therein. The bore is closed at this time by the stem of the valve which seats in the mouth thereof until the spool moves in response to pump failure or the like to first allow the valve to seat (closing the first path) and subsequently move sufficiently to bring the stem out of contact with the bore mouth (opening the second fail safe path without overlap with the first).

Abstract: A flow restriction between the control chamber of the expansion valve of the anti-skid device and the pump of the device prevents the expansion valve from moving as soon as the spool valve arrangement which opens the fail safe pressure transmission path and closes the normal path. The expansion chamber of the expansion valve is thus, in the case of pump failure, isolated from the pressure reservoir like effect of the pressure stored in the wheel cylinder(s) and the conduit between the skid device and the wheel cylinder(s) and therefore does not move as far before pressure equalization occurs across the expansion valve as in the case when a normal anti-skid operation is performed and the pressure in the wheel cylinder and the conduit is fully received in the expansion chamber. A switch incorporated in the anti-skid device is closed only when the expansion valve moves beyond the position assumed during pump failure.