Abstract: In an electrophotographic process using an amorphous silicon photosensitive member which has a surface protective layer and effecting reverse development and cleaning with a cleaning blade, the surface moving speed PS (mm/sec) of the photosensitive member is 320 mm/sec or more and a film thickness and a specific resistance value of the surface protective layer are respectively Ds (&mgr;m) and Rs (&OHgr;·cm) which fulfill the following conditions: 1.0×109≦Rs≦1.0×1013 Ds≦−0.136Ln(Rs)+(−0.004×PS+6).

Abstract: A method of manufacturing an electrophotographic photosensitive member includes the steps of: cleaning a substrate of the electrophotographic photosensitive member by cleaning step using a vessel and machining the substrate. The cleaning step includes a first overflowing step and a second overflowing step. In the first overflowing step, the liquid is allowed to be overflowed from a vessel while the substrate of the electrophotographic photosensitive member is immersed in the liquid contained in the vessel. In the second overflowing step, the liquid is allowed to overflow from a vessel while the substrate of the electrophotographic photosensitive member is pulled up in the liquid contained in the vessel. A flow rate Q2 of the overflowing liquid of the second overflowing step is higher than a flow rate Q1 of the overflowing liquid of the first overflowing step. The machining step forms a film of a photosensitive substance on the substrate.

Abstract: In an electrophotographic process using an amorphous silicon photosensitive member which has a surface protective layer and effecting reverse development and cleaning with a cleaning blade, the surface moving speed PS (mm/sec) of the photosensitive member is 320 mm/sec or more and a film thickness and a specific resistance value of the surface protective layer are respectively Ds (&mgr;m) and Rs (&OHgr;·cm) which fulfill the following conditions:

Abstract: A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.

Abstract: The present invention provides a method of producing an electrophotographic photosensitive member capable of obtaining high-quality uniform images without image defects and nonuniformity in image density. The method of producing an electrophotographic photosensitive member includes a step forming a functional film on a substrate, and a washing step of spraying water on the substrate surface from concentrically arranged nozzle groups positioned in a twisted relationship before the step of forming the functional film.

Abstract: A method for manufacturing an electrophotographic photosensitive member in which an aluminum substrate is fitted on a substrate holder and a functional film comprising a non-monocrystalline material containing silicon atoms as the matrix is formed by low pressure chemical deposition on the surface of the substrate, which comprises surface of the substrate is cleaned with water in which carbon dioxide is dissolved, the substrate holder comprises a metal as the matrix and has formed ceramics at least on the inner surface. This method and a jig used therein make it possible to prevent fine image defects, thereby improving electrophotography characteristics, and to economically and stably manufacture electrophotographic photosensitive members which provide high quality images free from defects and unevenness.

Abstract: In a deposited film forming process or apparatus, a deposited film is formed on a film-forming substrate by reduced-pressure vapor phase growth. The film-forming substrate is set on an auxiliary substrate and an auxiliary-substrate cap member is set at the upper part thereof. A maximum temperature difference between temperature at the upper end of the film-forming substrate and the temperature at the lower end of the auxiliary-substrate cap member provided on the film-forming substrate at its upper part is so controlled as to be not greater than a prescribed value so that a film deposited on the auxiliary-substrate cap member is improved in adhesion. Any deposits of films on the part other than the film-forming substrate can be prevented from coming off and scattering on the film-forming substrate so that deposited films having uniform film thickness and film quality can steadily be formed and also faulty images can occur less frequently.

Abstract: The present invention provides a method for efficiently cleaning a cleaning subject, especially a method for cleaning an electrophotographic photosensitive member that enables a uniform and high quality image to be obtained without leaving image defects and irregular images, wherein the cleaning step of the cleaning subject comprises: making the circulation flow rate during dipping of a cleaning subject in the cleaning solution to be different from the circulation flow rate when the cleaning subject is pulled up; and showering the cleaning solution used in the cleaning step during the pull-up step on the surface of the cleaning subject; or wherein the method for manufacturing an electrophotographic photosensitive member for depositing a functional film by a plasma CVD method on an aluminum substrate containing silicon, iron and aluminum especially comprises cleaning steps of: degreasing oil components on the surface of the substrate prior to deposition of a film; making the circulation flow rate during dippin

Abstract: A method for efficiently cleaning a cleaning subject, especially a method for cleaning an electrophotographic photosensitive member enables a uniform and high quality image to be obtained without leaving image defects and irregular images. The method includes a cleaning step during which the circulation flow rate during dipping of the cleaning subject in a cleaning solution is different from the circulation flow rate when the cleaning subject is pulled up, and where the cleaning solution is showered on the surface of the cleaning subject when it is pulled up. The cleaning method may be used in a method for manufacturing an electrophotographic photosensitive member for depositing a functional film by a plasma CVD method on a substrate.

Abstract: A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging energy into said reaction chamber to excite and decompose said film-forming raw material gas introduced into said reaction chamber whereby causing the formation of a deposited film on said substrate, characterized in that the introduction of said film-forming raw material gas into said reaction chamber is conducted by ejecting the film-forming raw material gas toward a member opposed to the substrate from each of right and left sides of the gas feed pipe through the gas ejecting holes of the gas feed pipe at a gas-ejecting angle (a) of 45.degree..ltoreq.(a)<90.degree. to a line which is passing through between said cylindrical substrate and each of said plurality of gas feed pipes.

Abstract: To provide an electrophotographic photosensitive member manufacturing method capable of preventing a substrate from corroding in working of the substrate and obtaining a high-quality image free from image defects and image density unevenness, the method of manufacturing an electrophotographic photosensitive member comprises the step of forming a functional film made of an amorphous material on the surface of an aluminum substrate by reduced-pressure vapor deposition, wherein the surface of the substrate is cleaned with the water containing an inhibitor as a specific component before the step of forming an electrophotographic photosensitive member.

Abstract: The present invention provides a method of producing an electrophotographic photosensitive member capable of obtaining high-quality uniform images without image defects and nonuniformity in image density. The method of producing an electrophotographic photosensitive member includes a step forming a functional film on a substrate, and a washing step of spraying water on the substrate surface from concentrically arranged nozzle groups positioned in a twisted relationship before the step of forming the functional film.

Abstract: For maintaining good cleanability even in use of low-melting-point or small-particle-diameter toner, thereby achieving a breakthrough improvement in the quality of image, the following conditions are satisfied:0.001.ltoreq.x/y.ltoreq.0.1,30.ltoreq.a/x.ltoreq.200, and0.1.ltoreq.a/y.ltoreq.3(x: height of unevenness, y: pitch of unevenness, a: particle diameter of toner).

Abstract: An electrophotographic light receiving member comprising a substrate in a cylindrical form and a light receiving layer formed on said substrate, wherein said substrate has (i) a portion with an enlarged bore at least on the side of an end portion of said substrate and (ii) a portion in a tapered form situated next to and outside said portion (i). An electrophotographic apparatus provided with said electrophotographic light receiving member.

Abstract: A method for manufacturing an electrophotographic photosensitive member capable of providing high quality even images, which are completely free from image defects and unevenness of image density, which comprises a step for forming a non-monocrystalline deposited film comprising silicon atoms and hydrogen atoms and/or fluorine atoms on an aluminum substrate containing a fine quantity of silicon atoms by a plasma CVD method, wherein the surface of the substrate is cleaned with water in which carbon dioxide has been dissolved before a process for forming the deposited film.