Abstract: A semiconductor element that is excellent in both mechanical reliability and electrical reliability and a mounting structure for the semiconductor element are provided. The semiconductor element includes: a substrate; an electrically conductive layer on the substrate; a protective layer having an opening on the electrically conductive layer; a barrier metal layer in contact with the electrically conductive layer in the opening; and an electrically conductive bump on the barrier metal layer. The barrier metal layer contains phosphorus and has a phosphorus-rich portion that has a higher phosphorus content than the remaining portion has. The phosphorus-rich portion is located in the surface of the barrier metal layer facing the electrically conductive bump, and the thickness thereof in the periphery of the region where the electrically conductive bump is formed is larger than at the center of the region.

Abstract: The semiconductor device is manufactured by forming a lower electrode layer 2 having a predetermined pattern on a semiconductor substrate 1 and forming an upper electrode layer 3 on a part of the top surface of the lower electrode layer 2, while holes 2X extending in the direction of thickness are formed on the top surface of the lower electrode layer 2 below the upper electrode layer 3, and the depth of holes 2X is smaller than the thickness of the lower electrode layer 2.

Abstract: A semiconductor element that is excellent in both mechanical reliability and electrical reliability and a mounting structure for the semiconductor element are provided. The semiconductor element includes: a substrate; an electrically conductive layer on the substrate; a protective layer having an opening on the electrically conductive layer; a barrier metal layer in contact with the electrically conductive layer in the opening; and an electrically conductive bump on the barrier metal layer. The barrier metal layer contains phosphorus and has a phosphorus-rich portion that has a higher phosphorus content than the remaining portion has. The phosphorus-rich portion is located in the surface of the barrier metal layer facing the electrically conductive bump, and the thickness thereof in the periphery of the region where the electrically conductive bump is formed is larger than at the center of the region.

Abstract: A print mask is used to form bumps on barrier metal layers of a wafer. The mask comprises a plurality of elongated perforations disposed in a linear arrangement such that paste can be applied to an object to be printed on via the perforations. Each of the perforations includes an edge disposed along the longitudinal direction, and the edge is inclined with respect to the direction perpendicular to the direction of arranging the perforations.

Abstract: A print mask is used to form bumps on barrier metal layers of a wafer. The mask comprises a plurality of elongated perforations disposed in a linear arrangement such that paste can be applied to an object to be printed on via the perforations. Each of the perforations includes an edge disposed along the longitudinal direction, and the edge is inclined with respect to the direction perpendicular to the direction of arranging the perforations.

Abstract: The semiconductor device is manufactured by forming a lower electrode layer 2 having a predetermined pattern on a semiconductor substrate 1 and forming an upper electrode layer 3 on a part of the top surface of the lower electrode layer 2, while holes 2X extending in the direction of thickness are formed on the top surface of the lower electrode layer 2 below the upper electrode layer 3, and the depth of holes 2X is smaller than the thickness of the lower electrode layer 2.

Abstract: A print mask is used to form bumps on barrier metal layers of a wafer. The mask comprises a plurality of elongated perforations disposed in a linear arrangement such that paste can be applied to an object to be printed on via the perforations. Each of the perforations includes an edge disposed along the longitudinal direction, and the edge is inclined with respect to the direction perpendicular to the direction of arranging the perforations.

Abstract: A print mask is used to form bumps on barrier metal layers of a wafer. The mask comprises a plurality of elongated perforations disposed in a linear arrangement such that paste can be applied to an object to be printed on via the perforations. Each of the perforations includes an edge disposed along the longitudinal direction, and the edge is inclined with respect to the direction perpendicular to the direction of arranging the perforations.