Abstract: A wire rope inspection device (100) is provided with a first detection coil (30) and a second detection coil (40), and a processing unit (61). The second detection coil is arranged to be inclined to the first detection coil when viewed from a direction (X-direction) perpendicular to a first direction (Z-direction) along which the first detection coil moves relative to the wire rope (W). The processing unit identifies an abnormality position of the wire rope in the first direction based on a detection signal detected by the first detection coil and identifies an area of the abnormality position of the wire rope in a cross-section based on a detection signal detected by the second detection coil.

Abstract: A wire rope inspection system is provided with: an excitation unit configured to apply a magnetic flux to a wire rope that is an inspection target; a detection unit configured to detect a magnetic flux of the wire rope to which the magnetic flux has been applied by the excitation unit; a detachable unit configured to be detachably mounted to a stationary unit fixed in proximity to the wire rope, the detachable unit being provided with at least the detection unit; and a positioning mechanism configured to position the detachable unit with reference to the stationary unit such that the detection unit is arranged at a predetermined position with reference to the wire rope.

Abstract: This magnetic body management system (100) includes: a first magnetic body inspection device (1) configured to acquire a detection signal (DS) before the magnetic body (MM) is installed at a location of use; a second magnetic body inspection device (2) configured to acquire a detection signal (DS) after the magnetic body (MM) has been installed at the location of use, the second magnetic body inspection device (2) having the same method as that of the first magnetic body inspection device (1); a server (3); a first transmission unit (4); and a second transmission unit (5). The server (3) is configured to estimate a deterioration state of the magnetic body (MM) based on at least the first magnetic body information (10) and the second magnetic body information (11).

Abstract: This magnetic body management system (100) includes: a first magnetic body inspection device (1) configured to acquire a detection signal (DS) before the magnetic body (MM) is installed at a location of use; a second magnetic body inspection device (2) configured to acquire a detection signal (DS) after the magnetic body (MM) has been installed at the location of use, the second magnetic body inspection device (2) having the same method as that of the first magnetic body inspection device (1); a server (3); a first transmission unit (4); and a second transmission unit (5). The server (3) is configured to estimate a deterioration state of the magnetic body (MM) based on at least the first magnetic body information (10) and the second magnetic body information (11).

Abstract: An inspection apparatus 1 for solar cells 100 includes: a visible light source 11 adapted to irradiate visible light; a CCD camera 15 adapted to measure a reflection image based on the visible light reflected by an antireflective film of a solar cell 100; an infrared light source 13 adapted to irradiate the solar cell 100 with infrared light; and a CCD camera 16 adapted to measure a transmission image based on the infrared light transmitting through the solar cell 100. In the inspection apparatus 1, as a result of comparing the reflection image and the transmission image with each other, of areas respectively appearing as bright spots in the reflection image, an area appearing as a dark spot in the transmission image is determined as an area including a particle, whereas of the areas respectively appearing as the bright spots in the reflection image, an area other than the area determined as the area including the particle is determined as an area including a pinhole.

Abstract: An inspection apparatus 1 for solar cells 100 includes: a visible light source 11 adapted to irradiate visible light; a CCD camera 15 adapted to measure a reflection image based on the visible light reflected by an antireflective film of a solar cell 100; an infrared light source 13 adapted to irradiate the solar cell 100 with infrared light; and a CCD camera 16 adapted to measure a transmission image based on the infrared light transmitting through the solar cell 100. In the inspection apparatus 1, as a result of comparing the reflection image and the transmission image with each other, of areas respectively appearing as bright spots in the reflection image, an area appearing as a dark spot in the transmission image is determined as an area including a particle, whereas of the areas respectively appearing as the bright spots in the reflection image, an area other than the area determined as the area including the particle is determined as an area including a pinhole.

Abstract: A crystallization apparatus is provided. The crystallization apparatus includes a visible light source capable of obtaining high energy density output therein. A visible light irradiation system is formed by a plurality of visible laser beam sources arranged in a two-dimensional array. The visible light irradiation system includes a light intensity distribution forming apparatus for patterning light intensity distribution of a plurality of visible laser beams emitted by each visible laser beam source, and an imaging optical system for imaging the light having the light intensity distribution patterned by the light intensity distribution forming apparatus onto an irradiated region on the processed substrate. The visible laser beams emitted by a plurality of solid lasers or semiconductor lasers are overlapped in the light intensity distribution forming apparatus that satisfies an imaging position relationship in an optical axis with respect to the processed substrate.

Abstract: A crystallization apparatus is provided. In the crystallization apparatus, a light intensity distribution formed by a light modulation device or a metal aperture and transferred to a processed substrate can be visualized. The crystallization apparatus has an ultraviolet (UV) irradiation system and a visible light irradiation system. The UV irradiation system irradiates pulses of laser beam in the UV range to the processed substrate. The visible light irradiation system continuously irradiates a visible light laser beam on the same irradiated region on the processed substrate. In a melted region resulted from the uniform irradiation of the laser beam in the UV range, the light intensity distribution of the visible laser beam is used to form crystal growth. The crystallization apparatus irradiates pulses of the laser beam in the UV range to melt the processed substrate, and continuously irradiates the visible light laser beam to crystallize the processed substrate.

Abstract: A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is placed very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a crystallizing laser light source, a phase shifter modulating pulse laser light to have the predetermined light intensity distribution, an excimer imaging optical system, a substrate holding stage mounting a processing substrate and continuously moving in the predetermined direction, a position measuring means, and a signal generating means indicating generation of the pulse laser light based on the position measurement of the stage by the position measuring means.

Abstract: A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is positioned very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a laser light source, a phase shifter modulating laser light to give a predetermined light intensity distribution, marks provided on the substrate, a substrate holding stage moving in a predetermined direction, mark measuring means measuring a time at which the mark passes a predetermined position, and signal generating means generating a trigger signal indicating the irradiation of the laser light based on the measured time.

Abstract: A laser anneal apparatus is provided with a laser source; a homogenizing optical system disposed in an optical path of laser light emitted from the laser source to homogenize an intensity distribution of the laser light in a section which is perpendicular to the optical path; a phase shifter disposed in the optical path of the laser light passed through the homogenizing optical system to produce an intensity distribution pattern of the laser light in the section which is perpendicular to the optical path; a photoreceptor device disposed in the optical path of the laser light passed through the phase shifter to intercept a part of the laser light and to measure a quantity of the intercepted laser light; and an image-forming optical system disposed in the optical path of the laser light passed through the photoreceptor device to focus the laser light on a substrate to be treated.

Abstract: A laser crystallization apparatus which capable of correcting both shift in imaging position caused by thermal lens effect of the imaging optical system and shift due to flatness of the substrate comprises an crystallization optical system which irradiates laser light to a thin film disposed on the substrate to melt and crystallize an irradiated region of the thin film, the apparatus comprises a measurement light source which is disposed outside a light path of the laser light, and which emits measurement light being illuminated the irradiated region of the thin film, and a substrate height correction system which illuminates the thin film with the measurement light through an imaging optical system in the crystallization optical system, and which detects the reflected measurement light from the thin film.

Abstract: A crystallization apparatus is provided. In the crystallization apparatus, a light intensity distribution formed by a light modulation device or a metal aperture and transferred to a processed substrate can be visualized. The crystallization apparatus has an ultraviolet (UV) irradiation system and a visible light irradiation system. The UV irradiation system irradiates pulses of laser beam in the UV range to the processed substrate. The visible light irradiation system continuously irradiates a visible light laser beam on the same irradiated region on the processed substrate. In a melted region resulted from the uniform irradiation of the laser beam in the UV range, the light intensity distribution of the visible laser beam is used to form crystal growth. The crystallization apparatus irradiates pulses of the laser beam in the UV range to melt the processed substrate, and continuously irradiates the visible light laser beam to crystallize the processed substrate.

Abstract: A crystallization apparatus is provided. The crystallization apparatus includes a visible light source capable of obtaining high energy density output therein. A visible light irradiation system is formed by a plurality of visible laser beam sources arranged in a two-dimensional array. The visible light irradiation system includes a light intensity distribution forming apparatus for patterning light intensity distribution of a plurality of visible laser beams emitted by each visible laser beam source, and an imaging optical system for imaging the light having the light intensity distribution patterned by the light intensity distribution forming apparatus onto an irradiated region on the processed substrate. The visible laser beams emitted by a plurality of solid lasers or semiconductor lasers are overlapped in the light intensity distribution forming apparatus that satisfies an imaging position relationship in an optical axis with respect to the processed substrate.

Abstract: A laser crystallization apparatus which capable of correcting both shift in imaging position caused by thermal lens effect of the imaging optical system and shift due to flatness of the substrate comprises an crystallization optical system which irradiates laser light to a thin film disposed on the substrate to melt and crystallize an irradiated region of the thin film, the apparatus includes a measurement light source which is disposed outside a light path of the laser light, and which emits measurement light being illuminated the irradiated region of the thin film, and a substrate height correction system which illuminates the thin film with the measurement light through an imaging optical system in the crystallization optical system, and which detects the reflected measurement light from the thin film.

Abstract: A laser crystallization apparatus has a light source, a phase shifter which modulates a laser light from the light source, an illumination system which is provided between the light source and the phase shifter, homogenizes a light intensity of the laser light from the light source and illuminates the phase shifter with the homogenized light, a stage which supports a non-single-crystal semiconductor, an image formation optical system having a plurality of optical members which is provided between the semiconductor on the stage and the phase shifter and forms an image of the modulated laser beam at a desired part on the semiconductor, and a temperature adjustment portion which adjusts a temperature of the optical member by heating or cooling the optical members of the image formation optical system.

Abstract: A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.

Abstract: A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is placed very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a crystallizing laser light source, a phase shifter modulating pulse laser light to have the predetermined light intensity distribution, an excimer imaging optical system, a substrate holding stage mounting a processing substrate and continuously moving in the predetermined direction, a position measuring means, and a signal generating means indicating generation of the pulse laser light based on the position measurement of the stage by the position measuring means.

Abstract: In-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. A method is characterized by simultaneously irradiating at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places. Apparatus according to the invention perform such methods.

Abstract: A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.