Abstract: A liquid crystal display device includes a phase-plate disposed between a pair of substrates, preferably inside of the electrode, to increase the transmission rate and improve the contrast ratio of the display.

Abstract: Disclosed is a wavelength multiplexing optical recording apparatus comprising laser sources radiating a plurality of laser beams of different wavelengths, an optical system for focusing the laser beams, and an optical recording medium having a plurality of optical recording layers with wavelength sensitivities for selective recording by said laser beams focused by said optical system. The optical recording layers of recording medium are laminated with distances between adjacent layers being made consistent with biased focal positions of the laser beams attributable to the chromatic aberration of the optical system, so that the laser beams are focused on the optical recording layers of corresponding wavelength sensitivities.

Abstract: An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is made very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.

Abstract: A desired portion of information stored in the form of holes using hole burning phenomena is erased by irradiating a desired portion of a recording medium with light so as to erase desired holes. In this way it is possible to erase selectively only desired information among information stored in a PHB memory and further to rewrite information in the portion, where information has been erased.

Abstract: Disclosed is a method of producing color filters, which comprises forming a layer of an organic polymeric material having a predetermined light-sensitive characteristic on a substrate, exposing this layer to a predetermined pattern, developing the exposed layer to form a filter base and dyeing the filter base, wherein after the development of the exposed layer, the layer is wetted with a dehydrating solution to remove water from the filter base. By this dehydrating treatment, the filter base can be processed with very high precision.

Abstract: A recording medium in which a substrate, an inorganic material layer adapted to absorb light and generate heat, a first organic material layer made of an organic matter containing metal, and a second organic material layer adapted to be deformed or removed by heat are successively stacked. A metal salt of an organic acid, or organic metal compound etc. are employed for the first organic material layer. Owing to the presence of this layer, the recording medium exhibits a stability against changes in the ambient temperature.

Abstract: According to a solid-state imager of this invention, in case where a plurality of color filters are disposed on a semiconductor body for the solid-state imager including a plurality of photosensitive regions and where the color filter of a third color is constructed by the overlapping between filter members of a first color and a second color, that one of the filter members which has a spectral transmittance substantially transmitting light for exposure for use in forming the filter members is arranged as a lower layer closer to a substrate of the semiconductor body. Even when the filter members are formed by the exposure process, a solid-state imager having good characteristics can be manufactured.

Abstract: In a solid-state imaging device wherein filters of the three primary colors in the mosaic filter configuration are stacked on a solid-state imager LSI in which a plurality of picture elements each consisting of a photoelectric conversion element and a scanning element are arrayed in the shape of a matrix; a method of producing a solid-state imaging device wherein the dimensions of filter layout patterns on exposure masks for the respective colors used in case of manufacturing the color filters of:T.sub.R <T.sub.B <T.sub.Gwhere T.sub.R denotes the thickness of the red filter, T.sub.G that of the green filter and T.sub.B that of the blue filter, are smaller than the dimensions of the picture elements, and especially, the dimensions of the filter layout patterns on the exposure mask for manufacturing the green filters are the smallest.

Abstract: In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

Abstract: A recording medium having at least a first inorganic material layer which overlies a predetermined substrate and which exhibits a light absorptivity for projected light, and a recording layer which overlies the first inorganic material layer and whose principal component is an organic material. The first inorganic material layer contains at least one element selected from the group consisting of In, Bi, Te, Sb, Ge, Sn, Pb, Cr, Nb, Ni, Pd, Fe, Pt, Re, Ta, Th, Ti, Zr and Tl and the content of the element or elements is at least 65 atomic-%.Further, the first inorganic material layer may well be overlaid with a second inorganic material layer which exhibits a light transmissivity higher than that of this first inorganic material layer. Preferable as the material of the second inorganic material layer is an inorganic material which contains at least one element selected from the group consisting of In, Bi, Te, Sb, Pb, Ge and Sn and at least one element selected from the group consisting of S, Se and O.

Abstract: A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime.

Abstract: This disclosure relates to a somatic element of single crystalline sapphire ceramics for use as an implant for dental surgery, orthopedic prosthetic surgery and the like, which element is excellent in mechanical strength, flexibility and affinity with its ambient tissue so much so that it eliminates a fear of development of bone cancer and facilitates the proliferation of uniform bone tissue around the somatic element implanted.

Abstract: In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.