Abstract: There is provided a semiconductor device in which an influence of a power source noise is suppressed and the number of pins and the area of the semiconductor device are reduced. A power source line for a first internal circuit and a power source line for a second internal circuit are coupled to a common pin terminal. A ground line for the first internal circuit and a ground line for the second internal circuit are coupled to another common pin terminal. A power source noise generated on the power source line for the first internal circuit during an operation of the first internal circuit is absorbed by a P-channel MOS transistor and a capacitor. A power source noise generated on the ground line is absorbed by an N-channel MOS transistor and the capacitor.

Abstract: There is provided a semiconductor device in which an influence of a power source noise is suppressed and the number of pins and the area of the semiconductor device are reduced. A power source line for a first internal circuit and a power source line for a second internal circuit are coupled to a common pin terminal. A ground line for the first internal circuit and a ground line for the second internal circuit are coupled to another common pin terminal. A power source noise generated on the power source line for the first internal circuit during an operation of the first internal circuit is absorbed by a P-channel MOS transistor and a capacitor. A power source noise generated on the ground line is absorbed by an N-channel MOS transistor and the capacitor.

Abstract: There is provided a semiconductor device in which an influence of a power source noise is suppressed and the number of pins and the area of the semiconductor device are reduced. A power source line for a first internal circuit and a power source line for a second internal circuit are coupled to a common pin terminal. A ground line for the first internal circuit and a ground line for the second internal circuit are coupled to another common pin terminal. A power source noise generated on the power source line for the first internal circuit during an operation of the first internal circuit is absorbed by a P-channel MOS transistor and a capacitor. A power source noise generated on the ground line is absorbed by an N-channel MOS transistor and the capacitor.

Abstract: There is provided a semiconductor device in which an influence of a power source noise is suppressed and the number of pins and the area of the semiconductor device are reduced. A power source line for a first internal circuit and a power source line for a second internal circuit are coupled to a common pin terminal. A ground line for the first internal circuit and a ground line for the second internal circuit are coupled to another common pin terminal. A power source noise generated on the power source line for the first internal circuit during an operation of the first internal circuit is absorbed by a P-channel MOS transistor and a capacitor. A power source noise generated on the ground line is absorbed by an N-channel MOS transistor and the capacitor.

Abstract: A sintered article of diamond is obtained by coating the surface of diamond particles with 30 to 0.1% by volume, based on the total volume of the diamond particles and aids, of at least one member selected from the group consisting of the transition metals of Groups 4a, 5a, and 6a in the Periodic Table of Elements and boron and silicon, and sintering the coated diamond particles under conditions of high pressure and high temperature, which sintered article consists of 70 to 99.8% by volume of diamond and 30 to 0.2% by volume of the carbide of the coating substance. A method for the production of the sintered article of diamond is also disclosed.

Abstract: A sintered article of diamond is obtained by coating the surface of diamond particles with 30 to 0.1% by volume, based on the total volume of the diamond particles and aids, of at least one member selected from the group consisting of the transition metals of Groups 4a, 5a, and 6a in the Periodic Table of Elements and boron and silicon, and sintering the coated diamond particles under conditions of high pressure and high temperature, which sintered article consists of 70 to 99.8% by volume of diamond and 30 to 0.2% by volume of the carbide of the coating substance. A method for the production of the sintered article of diamond is also disclosed.

Abstract: Disclosed herein is a portable frictional welding device whereby union of a metallic part with a given structure is accomplished by fastening said metallic part to the rotary shaft of the device supported slidably in the axial direction thereof, operating the rotary shaft so as to rotate the metallic part and at the same time pressing it against the structure and, when the point therebetween has assumed a state of fusion, stopping the rotation of the rotary shaft and simultaneously increasing the thrust being applied to said structure.