Abstract: A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.

Abstract: An external terminal electrode is attached to a frame, and the frame contains a first resin, and has a first adhered surface. A heat sink plate supports the frame, has an unmounted region where a power semiconductor element is to be mounted within the frame in plan view, is made of metal, and has a second adhered surface. An adhesive layer contains a second resin different from the first resin, and adheres the first adhered surface of the frame and the second adhered surface of the heat sink plate to each other. One of the first and second adhered surfaces includes a flat portion and a protruding portion. The protruding portion protrudes from the flat portion and opposes the other one of the first adhered surface and the second adhered surface with the adhesive layer therebetween.

Abstract: An external terminal electrode is attached to a frame, and the frame contains a first resin, and has a first adhered surface. A heat sink plate supports the frame, has an unmounted region where a power semiconductor element is to be mounted within the frame in plan view, is made of metal, and has a second adhered surface. An adhesive layer contains a second resin different from the first resin, and adheres the first adhered surface of the frame and the second adhered surface of the heat sink plate to each other. One of the first and second adhered surfaces includes a flat portion and a protruding portion. The protruding portion protrudes from the flat portion and opposes the other one of the first adhered surface and the second adhered surface with the adhesive layer therebetween.

Abstract: A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.

Abstract: A frame is made of a first material. An external terminal electrode is attached to the frame. A heat sink plate supports the frame and includes a mounting region in the frame. The heat sink plate is made of a non-composite material containing copper with purity of 95.0 weight percentage or more. A first adhesive layer bonds the frame and the heat sink plate to each other. The first adhesive layer is made of a second material different from the first material, and has a first composition. A power semiconductor element is mounted on the mounting region of the heat sink plate. A cover is attached to the frame to constitute a sealing space sealing the power semiconductor element without gross leak. A second adhesive layer bonds the frame and the cover to each other, and has a second composition different from the first composition of the first adhesive layer.

Abstract: A connected construction of a high-frequency package and a wiring board have an excellent high-frequency transmission characteristic without degradation of the transmission characteristic of even high-frequency signals in a wide band ranging from 20 GHz to 80 GHz in the case of connecting a high-frequency package to a wiring board. A distance between conductive vias and conductive vias to connect grounds formed on both main surfaces of a high-frequency transmission line substrate constituting the high-frequency package, and a distance between conductive vias and conductive vias to connect grounds formed on both main surfaces of the wiring board on which the high-frequency package is mounted, are set in consideration of the dielectric constant of the high-frequency transmission line substrate and the dielectric constant of the wiring board in order to improve the high-frequency transmission characteristic between the high-frequency transmission line substrate and the wiring board.

Abstract: The present invention was developed in order to provide a connected construction of a high-frequency package and a wiring board having an excellent high-frequency transmission characteristic, without degradation of the transmission characteristic of even high-frequency signals in a wide band ranging from 20 GHz to 80 GHz in the case of connecting a high-frequency package to a wiring board, wherein a distance between conductive vias and conductive vias to connect grounds formed on both main surfaces of a high-frequency transmission line substrate constituting the high-frequency package, and a distance between conductive vias and conductive vias to connect grounds formed on both main surfaces of the wiring board on which the high-frequency package is mounted, are set in consideration of the dielectric constant of the high-frequency transmission line substrate and the dielectric constant of the wiring board in order to improve the high-frequency transmission characteristic between the high-frequency transmission

Abstract: A highfrequency package has an excellent high-frequency characteristic in a band from quasi-millimeter wavelength to 90 GHz frequency. A sealed construction can be easily manufactured, leading to a reduction in cost, and is excellent in strength.

Abstract: The present invention was developed in order to provide a high-frequency package, having an excellent high-frequency characteristic in a band from quasi-millimeter wavelength to 90 GHz frequency and a favorably sealed construction, which can be easily manufactured, leading to a reduction in cost, and is excellent in strength.