Patents by Inventor Yoshio Waseda

Yoshio Waseda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride-based material and method of manufacturing the same
    Patent number: 7794541
    Abstract: Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H2 gas, GaCl gas (G2), and NH3 gas (G3) to a reaction chamber (10), and setting the growth temperature at 900 (° C.) (inclusive) to 1,200 (° C.) (inclusive), the growth pressure at 8.08×104 (Pa) (inclusive) to 1.21×105 (Pa) (inclusive), the partial pressure of the GaCl gas (G2) at 1.0×104 (Pa) (inclusive) to 1.0×104 (Pa) (inclusive), and the partial pressure of the NH3 gas (G3) at 9.1×102 (Pa) (inclusive) to 2.0×104 (Pa) (inclusive).
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: September 14, 2010
    Assignees: Tohoku University, Mitsubishi Chemical Corporation
    Inventors: Hiroyuki Shibata, Yoshio Waseda, Kenji Shimoyama, Kazumasa Kiyomi, Hirobumi Nagaoka
  • GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100162945
    Abstract: A method to make gallium nitride-based material by Hydride Vapor Phase Epitaxial Growth is provided.
    Type: Application
    Filed: March 8, 2010
    Publication date: July 1, 2010
    Applicants: Tohoku University, Mitsubishi Chemical Corporation
    Inventors: Hiroyuki Shibata, Yoshio Waseda, Kenji Shimoyama, Kazumasa Kiyomi, Hirobumi Nagaoka
  • GALLIUM NITRIDE-BASED MATERIAL
    Publication number: 20100140536
    Abstract: A gallium nitride-based material prepared by a vertical Hydride Vapor Phase Epitaxial Growth method which has thermal conductivity of at least 2.8×102 W/m·K at 25° C. is provided.
    Type: Application
    Filed: February 17, 2010
    Publication date: June 10, 2010
    Applicants: Tohoku University, Mitsubishi Chemical Corporation
    Inventors: Hiroyuki SHIBATA, Yoshio Waseda, Kenji Shimoyama, Kazumasa Kiyomi, Hirobumi Nagaoka
  • GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20090081110
    Abstract: Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H2 gas, GaCl gas (G2), and NH3 gas (G3) to a reaction chamber (10), and setting the growth temperature at 900 (° C.) (inclusive) to 1,200 (° C.) (inclusive), the growth pressure at 8.08×104 (Pa) (inclusive) to 1.21×105 (Pa) (inclusive), the partial pressure of the GaCl gas (G2) at 1.0×104 (Pa) (inclusive) to 1.0×104 (Pa) (inclusive), and the partial pressure of the NH3 gas (G3) at 9.1×102 (Pa) (inclusive) to 2.0×104 (Pa) (inclusive).
    Type: Application
    Filed: March 8, 2007
    Publication date: March 26, 2009
    Applicants: Tohoku University, MITSUBISHI CHEMICAL CORPORATION
    Inventors: Hiroyuki Shibata, Yoshio Waseda, Kenji Shimoyama, Kazumasa Kiyomi, Hirobumi Nagaoka