Abstract: This method for manufacturing a silicon epitaxial wafer includes: a step of growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110}; and a cooling step of cooling the silicon wafer after growing the epitaxial layer. In a first aspect, in the cooling step, a rapid cooling at a cooling rate of more than 500° C./minute is performed in a range of 750° C. to 650° C. In a second aspect, in the cooling step, a passivation film is grown on a main surface of the epitaxial layer at a temperature of 720° C. or more. In a third aspect, a single crystal silicon wafer in which a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction is used as the silicon wafer.

Abstract: This method for manufacturing a silicon epitaxial wafer includes: a step of growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110}; and a cooling step of cooling the silicon wafer after growing the epitaxial layer. In a first aspect, in the cooling step, a rapid cooling at a cooling rate of more than 500° C./minute is performed in a range of 750° C. to 650° C. In a second aspect, in the cooling step, a passivation film is grown on a main surface of the epitaxial layer at a temperature of 720° C. or more. In a third aspect, a single crystal silicon wafer in which a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction is used as the silicon wafer.

Abstract: This method for manufacturing a silicon epitaxial wafer includes: a step of growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110}; and a cooling step of cooling the silicon wafer after growing the epitaxial layer. In a first aspect, in the cooling step, a rapid cooling at a cooling rate of more than 500° C./minute is performed in a range of 750° C. to 650° C. In a second aspect, in the cooling step, a passivation film is grown on a main surface of the epitaxial layer at a temperature of 720° C. or more. In a third aspect, a single crystal silicon wafer in which a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction is used as the silicon wafer.

Abstract: Particles adherent to a semiconductor wafer surface, and defects such as SFs, mounds, and dislocations present near the semiconductor wafer surface can be accurately divided according to their types at a low cost without being influenced by an inspector's ability. The wafer is scanned with a laser beam, scattered or reflected light from the wafer surface is detected from multiple light optics having different detecting angles, respectively, and forms and types of the occurrences present on the wafer surface are determined based on a ratio of detected light intensities from the multiple light optics.