Patents by Inventor Yoshiro Abe

Yoshiro Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7972973
    Abstract: The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: July 5, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Takashi Kobayashi, Toshihiko Shinozawa, Yoshiro Abe, Junichi Kitagawa
  • Publication number: 20100093186
    Abstract: The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa.
    Type: Application
    Filed: September 28, 2007
    Publication date: April 15, 2010
    Applicant: Tokyo Electron Limited
    Inventors: Takashi Kobayashi, Toshihiko Shinozawa, Yoshiro Abe, Junichi Kitagawa
  • Patent number: 5730637
    Abstract: A DC gas discharge type image display device includes a front glass substrate; a rear glass substrate facing the front glass substrate, interposing a discharge gas therebetween; a set of anodes including a plurality of line electrodes formed on the rear glass substrate; a set of cathodes including a plurality of line electrodes placed on the front glass substrate so as to perpendicularly cross the set of anodes; and a plurality of discharge cells, each being provided so as to correspond to each of the cross points of the set of anodes and the set of cathodes. The device is driven in a refresh driving method or a memory driving method. As to the production of this device, the set of cathodes is formed by a spraying method. The cathodes are made from aluminum, nickel, an aluminum alloy or a nickel alloy. The discharge gas is a mixed gas of He and Xe.
    Type: Grant
    Filed: June 18, 1996
    Date of Patent: March 24, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigeo Suzuki, Hidenobu Shintaku, Taku Watanabe, Mitsuo Asabe, Kazuo Takahashi, Yoshiro Abe, Hiroki Kono, Kazunori Hirao
  • Patent number: 5646482
    Abstract: In a DC gas discharge type image display apparatus including: a front glass substrate; a rear glass substrate facing the front glass substrate, interposing a discharge gas therebetween; a set of anodes including a plurality of line electrodes formed on the rear glass substrate; a set of cathodes including a plurality of line electrodes placed on the front glass substrate so as to perpendicularly cross the set of anodes; and a plurality of discharge cells, each being provided so as to correspond to each of the cross points of the set of anodes and the set of cathodes, the apparatus being driven in a refresh driving method or a memory driving method, the set of cathodes are formed by a spraying method. The cathodes are made from aluminum, nickel, an aluminum alloy or a nickel alloy. The discharge gas is a mixed gas of He and Xe.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: July 8, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigeo Suzuki, Hidenobu Shintaku, Taku Watanabe, Mitsuo Asabe, Kazuo Takahashi, Yoshiro Abe, Hiroki Kono, Kazunori Hirao