Abstract: In order to realize an accurate electrochemical measurement without a peak caused due to a silver chloride complex ion, an electrochemical measurement electrode of the present invention which measures an electrochemical active substance in a sample solution containing a chloride ion includes (i) a working electrode, (ii) a reference electrode made of silver and silver chloride, and (iii) a silver ion capturing material which captures a silver ion out of a silver chloride complex ion generated in the reference electrode.

Abstract: Developed is an adiponectin-recognition material which is inexpensive and excellent in: productivity; stability of quality and a structure; and convenience. The present invention provides a peptide consisting of not more than 50 amino acids and having bindability with adiponectin.

Abstract: Developed is an adiponectin-recognition material which is inexpensive and excellent in: productivity; stability of quality and a structure; and convenience. The present invention provides a peptide consisting of not more than 50 amino acids and having bindability with adiponectin.

Abstract: In order to realize an accurate electrochemical measurement without a peak caused due to a silver chloride complex ion, an electrochemical measurement electrode of the present invention which measures an electrochemical active substance in a sample solution containing a chloride ion includes (i) a working electrode, (ii) a reference electrode made of silver and silver chloride, and (iii) a silver ion capturing material which captures a silver ion out of a silver chloride complex ion generated in the reference electrode.

Abstract: A fully inverted type SOI-MOSFET has a channel region 18 constructed of a portion that belongs to a top silicon layer 13 and is located just under a gate electrode 15 and a source region 16 and a drain region 17, which belong to the top silicon layer 13 and are located adjacent to this channel region 18. The channel region 18 is inverted throughout the entire thickness during operation. The source region 16 has a source resistance RS, which satisfies a relation that (1/gm)>RS with respect to the mutual conductance gm of the channel region 18 itself. According to this fully inverted type SOI-MOSFET, the effective mutual conductance (Gm) can be increased.

Abstract: A fully inverted type SOI-MOSFET has a channel region 18 constructed of a portion that belongs to a top silicon layer 13 and is located just under a gate electrode 15 and a source region 16 and a drain region 17, which belong to the top silicon layer 13 and are located adjacent to this channel region 18. The channel region 18 is inverted throughout the entire thickness during operation. The source region 16 has a source resistance RS, which satisfies a relation that (1/gm)>RS with respect to the mutual conductance gm of the channel region 18 itself. According to this fully inverted type SOI-MOSFET, the effective mutual conductance (Gm) can be increased.

Abstract: A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.

Abstract: A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.

Abstract: A method and apparatus for recording and reading information in a recording medium comprising a thin film of an organic compound having polymorphisms. The free energy of each polymorphism is different with each other. Information is recorded in the recording medium by applying energy to the recording medium and transferring locally the polymorphism of the organic compound to another polymorphism of the organic compound. The amount of the energy corresponds to the difference in free energy between the polymorphisms. Information is read from the recording medium by optically discriminating between the optical absorption properties of the polymorphisms.

Abstract: A cation exchange polyimide resin having resistance to organic solvents which contains polyamidocarboxylic acid units providing sites of ion exchange and represented by the formula (I): ##STR1## wherein R.sup.1 is a tetravalent organic group, and R.sup.2 is a bivalent organic group, which is capable of trapping cations from organic solvents.

Abstract: A process for preparing an organic compound thin film for use in an optical device including steps of forming a multiplicity of geometric linear streaks with microscopic unevenness in section on a substrate at least whose surface is made up of an amorphous organic polymer layer; thereafter vapor-depositing on the surface an organic compound capable of exhibiting non-linear optical characteristics to form a non-linear optical material film.

Abstract: A method of manufacturing a polyimide thin film is disclosed which comprises supplying vapors of a polyimide starting material comprising a plurality of polyimide forming monomers into a plasma atmosphere, transferring the ionized polyimide starting material, under an electric field, to the surface of a glass or metallic substrate and depositing the material thereon, and heating the same during or after deposition, thereby forming a polyimide thin film as an orientation film on the substrate.