Patents by Inventor Yoshiro Fujita

Yoshiro Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating semiconductor device
    Patent number: 5318917
    Abstract: A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming first insulating films and simultaneously forming an emitter lead-out electrode and a collector lead-out electrode in regions above an emitter-contact-forming region and a collector-contact-forming region, the first insulating films extending on the emitter and collector lead-out electrodes, the emitter and collector lead-out electrodes including impurity corresponding to the first conduction type; forming second insulating films at sides of the emitter and collector lead-out electrodes; forming a base contact; forming a base lead-out electrode including impurity corresponding to the second conduction type; diffusing the impurity from the emitter lead-out electrode, the collector lead-out electrode, and the base lead-out electrode to form an emitter diffusion lay
    Type: Grant
    Filed: February 10, 1993
    Date of Patent: June 7, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Kanda, Yoshiro Fujita, Takehiro Hirai, Mitsuo Tanaka, Hideya Esaki
  • Method of fabricating semiconductor device
    Patent number: 5204274
    Abstract: A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming first insulating films and simultaneously forming an emitter lead-out electrode and a collector lead-out electrode in regions above an emitter-contact-forming region and a collector-contact-forming region, the first insulating extending films on the emitter and collector lead-out electrodes, the emitter and collector lead-out electrodes including impurity corresponding to the first conduction type; forming second insulating films at sides of the emitter and collector lead-out electrodes; forming a base contact; forming a base lead-out electrode including impurity corresponding to the second conduction type; diffusing the impurity from the emitter lead-out electrode, the collector lead-out electrode, and the base lead-out electrode to form an emitter diffusion lay
    Type: Grant
    Filed: August 29, 1991
    Date of Patent: April 20, 1993
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Kanda, Yoshiro Fujita, Takehiro Hirai, Mitsuo Tanaka, Hideya Esaki