Patents by Inventor Yoshiro Hirayama

Yoshiro Hirayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230368840
    Abstract: A magneto-optical memory interface includes: a memory cell structure having multiple allocated magnetic recording cells, a selection means configured to select an individual or a predetermined number of the multiple allocated magnetic recording cells of the memory structure, and configured for an electronic signal to be applicable thereto; and a light irradiation part configured to irradiate the predetermined number of the multiple allocated magnetic memory cells with an optical signal, wherein each of the magnetic recording cells is a magnetic recording cell whose sensitivity to changes in a magnetization state thereof increases in response to an irradiation light from the light irradiation part, and each of the magnetic recording cells is a magnetic recording cell whose magnetization state changes in response to an applied electrical signal resulting from selection by the selection means and the irradiation light from the light irradiation part.
    Type: Application
    Filed: September 30, 2020
    Publication date: November 16, 2023
    Inventors: Shigemi Mizukami, Shunsuke Fukami, Junsaku Nitta, Satoshi Iihama, Yoshiro Hirayama, Seiji Sakai
  • Patent number: 9733327
    Abstract: In order to provide an NMR imaging device capable of distinguishing substances that cannot be distinguished by T2H, an NMR imaging device (1) according to this invention includes: a probe (3) capable of housing a sample in a static gradient magnetic field; an application portion (5) configured to apply a ? pulse having a Larmor frequency corresponding to the static gradient magnetic field at a predetermined position of the sample to the sample in a multiplexed manner at a predetermined time interval; and an image processing portion (7) configured to determine a relaxation time based on a nuclear magnetic resonance signal of the sample, and perform imaging of the relaxation time.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: August 15, 2017
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Susumu Sasaki, Tatsuro Yuge, Yoshiro Hirayama
  • Patent number: 9310449
    Abstract: Provided is a total electrical nuclear-spin polarization device that is applicable to many narrow-gap semiconductor two-dimensional quantum structures such as InSb with a large g-factor and with a mobility having a normal value. A nuclear-spin polarization device 1 creates a state where the Landau-level separation and the Zeeman-level separation in a sample are equal to each other in a magnetic field, thereby crossing different spin states, and detects nuclear-spin polarization from a resistance change at the crossing point caused by the nuclear-spin polarization.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: April 12, 2016
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hongwu Liu, Kaifeng Yang, Yoshiro Hirayama
  • Publication number: 20140375317
    Abstract: In order to provide an NMR imaging device capable of distinguishing substances that cannot be distinguished by T2H, an NMR imaging device (1) according to this invention includes: a probe (3) capable of housing a sample in a static gradient magnetic field; an application portion (5) configured to apply a ? pulse having a Larmor frequency corresponding to the static gradient magnetic field at a predetermined position of the sample to the sample in a multiplexed manner at a predetermined time interval; and an image processing portion (7) configured to determine a relaxation time based on a nuclear magnetic resonance signal of the sample, and perform imaging of the relaxation time.
    Type: Application
    Filed: December 18, 2012
    Publication date: December 25, 2014
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Susumu Sasaki, Tatsuro Yuge, Yoshiro Hirayama
  • Publication number: 20120256629
    Abstract: Provided is a total electrical nuclear-spin polarization device that is applicable to many narrow-gap semiconductor two-dimensional quantum structures such as InSb with a large g-factor and with a mobility having a normal value. A nuclear-spin polarization device 1 creates a state where the Landau-level separation and the Zeeman-level separation in a sample are equal to each other in a magnetic field, thereby crossing different spin states, and detects nuclear-spin polarization from a resistance change at the crossing point caused by the nuclear-spin polarization.
    Type: Application
    Filed: December 14, 2010
    Publication date: October 11, 2012
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hongwu Liu, Kaifeng Yang, Yoshiro Hirayama
  • Patent number: 4029495
    Abstract: A supported catalyst contaminated with organic impurities or a mixture of such a catalyst and a flux is introduced into a rotary furnace, rocking furnace or gradient furnace and agitated and heated therein until sintered or transformed into a semi-melted state. After sintered or transformed into a semi-melted state, the mix is then solidified, cooled and pulverized. The heavy metal is recovered by gravity concentration or magnetic separation. Alternatively, the sintered or semi-melted mixture may be fused at a higher temperature to separate the components by difference in their specific gravities.
    Type: Grant
    Filed: August 3, 1976
    Date of Patent: June 14, 1977
    Inventor: Yoshiro Hirayama