Abstract: Provided is a method for producing an optical film using simultaneous multilayer coating application, the method being capable of reducing the incidence of coating failure in an optical film. The present invention relates to a method for producing an optical film having at least two or more optical functional layers formed on a base material, the method including: a loss modulus checking step of checking the loss moduli of coating liquids capable of forming the respective optical functional layers by measuring dynamic viscoelasticity; and a coating application step of performing simultaneous multilayer coating application of the coating liquids capable of forming the respective optical functional layers on the base material.

Abstract: Provided is a method for producing an optical film using simultaneous multilayer coating application, the method being capable of reducing the incidence of coating failure in an optical film. The present invention relates to a method for producing an optical film having at least two or more optical functional layers formed on a base material, the method including: a loss modulus checking step of checking the loss moduli of coating liquids capable of forming the respective optical functional layers by measuring dynamic viscoelasticity; and a coating application step of performing simultaneous multilayer coating application of the coating liquids capable of forming the respective optical functional layers on the base material.

Abstract: Provided are a method of manufacturing liquid crystal display device possessing transparent conductive layer exhibiting excellent optical transparency, resistance characteristic, evenness, adhesion to substrate, and hardness, and liquid crystal display device thereof.

Abstract: A thin film forming apparatus includes: a first electrode having a first discharge surface and a second electrode having a second discharge surface, the first discharge surface facing opposite to the second discharge surface to form a discharge space; a gas supply unit for supplying a gas including a thin film formation gas to the discharge space; a power source for discharging and activating the gas by applying a high frequency electric field across the discharge space; and a film transporting mechanism for transporting a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, wherein a thin film is formed by exposing a substrate to the activated gas and, the protecting film is transported in contact with at least one of the first discharge surface and the second discharge surface and with at least a part of a surface other than the discharge surface which continues to the discharge surface.

Abstract: Provided are a method of manufacturing liquid crystal display device possessing transparent conductive layer exhibiting excellent optical transparency, resistance characteristic, evenness, adhesion to substrate, and hardness, and liquid crystal display device thereof.

Abstract: A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency ?2 of the second high frequency electric field is higher than frequency ?1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1?IV>V2 or V1>IV?V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A plasma treatment method for surface treatment of a substrate with an atmospheric pressure plasma treatment apparatus is disclosed. The apparatus has a first electrode and a second electrode opposed to each other, a discharge space between the opposed electrodes, a voltage application means for applying voltage across the discharge space, a gas supply means for supplying a reactive gas and an inert gas to the discharge space. The method is one wherein the reactive gas at the discharge space is excited at atmospheric pressure or at approximately atmospheric pressure by applying voltage through the voltage application means to generate discharge plasma, and a substrate is exposed to the discharge plasma to be subjected to surface treatment, and wherein the reactive gas is not directly in contact with the discharge surface of the first electrode or the second electrode.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A thin film forming apparatus includes: a first electrode having a first discharge surface and a second electrode having a second discharge surface, the first discharge surface facing opposite to the second discharge surface to form a discharge space; a gas supply unit for supplying a gas including a thin film formation gas to the discharge space; a power source for discharging and activating the gas by applying a high frequency electric field across the discharge space; and a film transporting mechanism for transporting a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, wherein a thin film is formed by exposing a substrate to the activated gas and, the protecting film is transported in contact with at least one of the first discharge surface and the second discharge surface and with at least a part of a surface other than the discharge surface which continues to the discharge surface.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency &ohgr;2 of the second high frequency electric field is higher than frequency &ohgr;1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

Abstract: In a surface treatment for treating a surface of a subject of treating by a discharge-activated gas, under an atmospheric pressure or a pressure in the neighborhood of it, by arranging a second electrode at a position separated from the discharging section for generating said discharge-activated gas by a first electrode coated with a dielectric substance, and arranging a surface to be treated of a subject of treating between said plasma generating part, serving as a discharging section, and said second electrode, a surface treatment of said subject of treating is practiced.

Abstract: A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.

Abstract: An atmospheric pressure plasma treatment apparatus is disclosed which comprises a first electrode and a second electrode opposed to each other, a discharge space between the opposed electrodes, a voltage application means for applying voltage across the discharge space, a gas supply means for supplying a reactive gas and an inert gas to the discharge space, wherein the reactive gas at the discharge space is excited at atmospheric pressure or at approximately atmospheric pressure by applying voltage through the voltage application means to generate discharge plasma, and a substrate is exposed to the discharge plasma to be subjected to surface treatment, and wherein the reactive gas is not directly in contact with the discharge surface of the first electrode or the second electrode.

Abstract: In a surface treatment for treating a surface of a subject of treating by a discharge-activated gas, under an atmospheric pressure or a pressure in the neighborhood of it, by arranging a second electrode at a position separated from the discharging section for generating said discharge-activated gas by a first electrode coated with a dielectric substance, and arranging a surface to be treated of a subject of treating between said plasma generating part, serving as a discharging section, and said second electrode, a surface treatment of said subject of treating is practiced.

Abstract: The present invention relates to a method for preparation of plasma powder characterized by catalytic treatment of plasma with colloidal silica and subsequent powdering of the plasma. The plasma powder thus obtained by the present invention is substantially free of malodorous substances.