Abstract: A pattern inspection method includes: generating an image of an inspection area including a pattern to be inspected; obtaining, from the image, measured values representing two-dimensional shape information of the pattern to be inspected; producing a frequency distribution of the measured values; calculating a statistic of the measured values; calculating a change in the statistic while carrying out an inspection operation which comprises repeating the processes from generating the image to calculating the statistic; and terminating the inspection operation if the change in the statistic is smaller than a threshold value.

Abstract: A method of visualizing a defect of a pattern constituting a semiconductor device with a high accuracy in a wide range is disclosed. The method of visualizing a defect, includes: generating pattern images with a scanning electron microscope; superimposing the pattern images while aligning positions of patterns in the pattern images; calculating a variance of gray level over the pattern images for each of inspection areas on the patterns; creating a false-color image by color-coding the inspection areas according to magnitude of the variance; and displaying the false-color image.

Abstract: A method capable of accurately detecting a defect of a contact hole by using voltage contrast images is disclosed.

Abstract: A pattern inspection method includes: generating an image of an inspection area including a pattern to be inspected; obtaining, from the image, measured values representing two-dimensional shape information of the pattern to be inspected; producing a frequency distribution of the measured values; calculating a statistic of the measured values; calculating a change in the statistic while carrying out an inspection operation which comprises repeating the processes from generating the image to calculating the statistic; and terminating the inspection operation if the change in the statistic is smaller than a threshold value.

Abstract: A PMMA dosimeter for ionizing radiation shows not only a broad dose measurement range but also sensitivity less depending upon temperature. PMMA having a glass transition point Tg higher than 120° C. is employed as substance sensitive to ionizing radiation such as gamma ray. This gives the PMMA dosimeter characteristics such that (1) absorbance changing rate (measurement light wavelength 320 nm) per 1 kGy at dose of 140 kGy under 25° C. condition is not less than 0.003 ABS/mm and (2) the maximum absorbance ABSmax and the minimum absorbance ABSmin at dose of 140 kGy under a temperature condition range from 10° C. to 50° C. meet a formula ABSmax/ABSmin?1.06. PMMA dosimeters according to prior arts show characteristics such that sensitivity drops sharply in a dose range over 50 kGy and has a growing dependency upon temperature in a range over 25° C.