Patents by Inventor Yoshita Nishioka

Yoshita Nishioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser device and manufacturing method thereof
    Patent number: 8599895
    Abstract: A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0?x1?1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0?x2?1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0?x3?1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4?x2?0.8.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: December 3, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Yoshita Nishioka, Yoichi Mugino, Tsuguki Noma