Patents by Inventor Yoshita Yokota

Yoshita Yokota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
    Patent number: 8871645
    Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: October 28, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Udayan Ganguly, Yoshita Yokota, Jing Tang, Sunderraj Thirupapuliyur, Christopher Sean Olsen, Shiyu Sun, Tze Wing Poon, Wei Liu, Johanes Swenberg, Vicky U. Nguyen, Swaminathan Srinivasan, Jacob Newman
  • SEMICONDUCTOR DEVICES SUITABLE FOR NARROW PITCH APPLICATIONS AND METHODS OF FABRICATION THEREOF
    Publication number: 20100062603
    Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Application
    Filed: September 11, 2009
    Publication date: March 11, 2010
    Inventors: Udayan Ganguly, Yoshita Yokota, Jing Tang, Sunderraj Thirupapuliyur, Christopher Sean Olsen, Shiyu Sun, Tze Wing Poon, Wei Liu, Johanes Swenberg, Vicky U. Nguyen, Swaminathan Srinivasan, Jacob Newman