Abstract: A method of producing a silicon carbide molded item is provided. The method includes molding a curable silicone composition comprising a silicon carbide powder or a combination of a silicon carbide powder and a carbon powder into a desired shape, curing the molded curable silicone composition to yield a cured silicone molded item, and then thermally decomposing the cured silicone molded item under a non-oxidizing atmosphere. The method is capable of simply producing a high-purity silicon carbide molded item having a desired shape and dimensions.

Abstract: A high-purity silicon carbide conjugate having excellent heat resistance, and a method of producing such a conjugate. The silicon carbide conjugate is composed of a high-purity silicon carbide joining layer provided between a silicon carbide member and another silicon carbide member. The conjugate is obtained by interposing a curable silicone composition between the two silicon carbide members, curing the composition to obtained a cured product layer, and then thermally decomposing the cured product layer in a non-oxidizing atmosphere, thereby converting the layer to silicon carbide and joining the members together. The conjugate has excellent heat resistance and a high degree of purity.

Abstract: Disclosed herein is a card peripheral device including, an electronic part unit, a connector part, and a power supply unit, wherein the electronic part unit includes a controller, and at least a second interface, out of a first interface and the second interface, and the controller has a function to vary data transfer speed depending on whether power feed of the first power by the power supply terminal is received or the second power by the power supply unit is received.

Abstract: A card-type peripheral device includes an electronic component including a memory disposed in a case, a terminal part including connection terminals connectable with a to-be-connected device, and a switch for disabling writing to the memory. The card-type peripheral device further includes a signal terminal capable of transmitting a signal indicating the status of the switch to the to-be-connected device.

Abstract: Disclosed herein is a card-type peripheral apparatus including: a case body configured to accommodate an electronic package including a circuit board between a first surface and a second surface that are opposite to each other; a first electronic package including a memory mounted on the circuit board; a second electronic package including an electronic part for controlling the memory mounted on the circuit board; a first thermal conductive material arranged inside the case body, the first thermal conductive material in contact with a surface of at least one of the first electronic package and the second electronic package; and a second thermal conductive material formed with the first surface and the second surface of the case body, wherein the first thermal conductive material and the second thermal conductive material are in contact with each other inside the case body.

Abstract: A card-type peripheral device having a plurality of specifications of external interfaces includes a connector configured to connect the card-type peripheral device to a connectable device connectable to the card-type peripheral device, the connector including a dedicated terminal in which an interface to be used is set; an electronic component configured to be accessed via the set interface; a plurality of interface function units each configured to control an interface compliant with one of the plurality of specifications; and a communication function unit configured to perform communication with the electronic component using one of the interface function units having a specification corresponding to a setting of the dedicated terminal.

Abstract: An integrated circuit includes multiple memory circuits including memory cell arrays different in size, a BIST circuit which has a cell sequential transition test processor and which outputs a test cell address, a transition direction specification signal and an active signal. The integrated circuit has adjustment circuits which are provided respectively for the memory circuits and which replace the test cell address with the test cell address in a memory cell array area, or which convert the active signal into a signal indicating non-execution when the test cell address outputted from the BIST circuit corresponds to a cell in a virtual cell array being in an area outside the memory cell array.

Abstract: A proton conducting membrane comprising, as a main component, a ceramic structure in which an oxygen atom of a metal oxide is bonded through the oxygen atom with at least one group derived an oxygen acid selected from —B(O)3—, —S(?O)2(O)2—, —P(?O)(O)3—, —C(?O)(O)2—, and —N(O)3—, wherein the metal oxide and said at least one group derived from the oxygen acid share the oxygen atom, the proton conducting membrane being made by a sol-gel reaction of the oxygen acid or its precursor and a precursor of the metal oxide in order to obtain a sol-gel reaction product, followed by heating of the sol-gel reaction product at a temperature in a range of 100° C. to 600° C., the oxygen acid or its precursor being selected from a boric acid, a sulfuric acid, a phosphoric acid, a carbonic acid, a nitric acid, and precursors thereof. Thus, a novel proton conducting membrane is provided.

Abstract: A card-type peripheral device includes an electronic component disposed in a case, and a terminal part including connection terminals connectable with a to-be-connected device, wherein a function of the electronic component and the number of terminals of the terminal part are maintained to be compatible with those of the to-be-connected device, and the outside dimensions of the case are set to be smaller than the outside dimensions of the to-be-connected device and greater than the outside dimensions of a predetermined small-size card.

Abstract: Disclosed herein is a memory card that is a second memory card provided in connection with a first memory card. The first and second memory cards include: a body portion having the shape of a rectangular plate; and guide portions that project from both sides of the body portion in a width direction of the body portion and extend in a longitudinal direction of the body portion. Each guide portion has a thickness less than a thickness of the body portion. The first and second memory cards are equal in thickness and length of the body portion and distance between tips of the guide portions. The body portion of the second memory card has a width greater than a width of the body portion of the first memory card.

Abstract: An amorphous inorganic ceramic material including silicon, carbon and oxygen is provided. In the ceramic material, the average elemental ratio between silicon, carbon and oxygen is represented by a compositional formula: SiCaOb wherein, a is a number that satisfies: 0.5?a?3.0, and b is a number that satisfies 0.5?b?4.0), the material has a siloxane skeleton formed of Si—O—Si bonds, and the hydrogen mass fraction is within a range from 0 to 1% by mass. The material exhibits excellent heat resistance, wettability with other materials, strength and elastic modulus, and is useful as a reinforcing material for composite materials, or as an exhaust gas filter material or the like.

Abstract: An integrated circuit includes multiple memory circuits including memory cell arrays different in size, a BIST circuit which has a cell sequential transition test processor and which outputs a test cell address, a transition direction specification signal and an active signal. The integrated circuit has adjustment circuits which are provided respectively for the memory circuits and which replace the test cell address with the test cell address in a memory cell array area, or which convert the active signal into a signal indicating non-execution when the test cell address outputted from the BIST circuit corresponds to a cell in a virtual cell array being in an area outside the memory cell array.

Abstract: When associating a plurality of logical devices with one logical volume, the storage controller of the present invention improves the responsive performance thereof by determining the position for allocating the logical devices in accordance with the pattern of access made from the host. One logical volume is constituted by a plurality of logical devices. The control section computes the performance indicator (load) of each logical device in accordance with the pattern of access to the logical volume from the host. The control section computes the performance indicator of each RAID group for the case where each logical device is allocated on the basis of the performance indicator of each logical device. The control section determines a RAID group to allocate each logical device, so that the variance of the performance indicator of the RAID group becomes minimum.

Abstract: A memory card includes: a package in the form of a thin plate made of an insulating material and configured to be inserted into and removed from a slot of an external apparatus; a plurality of contacts provided on the package and configured to transmit a signal to and from the external apparatus; the contacts being juxtaposed in a direction perpendicular to a loading/unloading direction, in which the memory card is loaded into or unloaded from the external apparatus, in a region of a flat face, which is one of faces of the package in a thicknesswise direction, except locations on the opposite sides in the direction perpendicular to the loading/unloading direction; and a pair of side labels adhered to the locations on the opposite sides of the upper face of the package and extending along the loading/unloading direction.

Abstract: A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions.

Abstract: A novel ion conductive material is provided. The ion conductive material composed of an amorphous material is employed.