Abstract: A vehicle battery cooling system that cools a battery built in an electrically powered vehicle includes a water storage tank, a circulating mechanism, a nozzle, a radiating fin, and a processor. The water storage tank is disposed inside the electrically powered vehicle and near the battery, and stores cooling water for cooling the battery. The circulating mechanism causes, when electric power is supplied from an external facility to the battery, the cooling water supplied from the external facility to circulate through the battery and the water storage tank. The nozzle injects the cooling water supplied from the circulating mechanism into a predetermined part of the electrically powered vehicle. The radiating fin is foldable and controls heat transfer between the battery and the water storage tank. The processor controls respective operations of the circulating mechanism and the nozzle, and switching between open and closed states of the radiating fin.

Abstract: A multilayer substrate includes a first metal plate forming a first coil; a second metal plate facing the first metal plate in a coil-winding axis direction and forming a second coil; a first insulating layer having therein the first metal plate; and a second insulating layer having therein the second metal plate. A metal foil is connected to the first metal plate through a plurality of via holes. An electronic component embedded in the first insulating layer is connected to a pattern formed on the metal foil.

Abstract: A multilayer substrate includes a first metal plate forming a first coil; a second metal plate facing the first metal plate in a coil-winding axis direction and forming a second coil; a first insulating layer having therein the first metal plate; and a second insulating layer having therein the second metal plate. A metal foil is connected to the first metal plate through a plurality of via holes. An electronic component embedded in the first insulating layer is connected to a pattern formed on the metal foil.

Abstract: An electronic device includes a heat dissipation member, a power element that is thermally coupled to the heat dissipation member, and a first conductive layer to which the power element is electrically coupled. The electronic device further includes a control element that controls a switching operation of the power element, a second conductive layer to which the control element is electrically coupled, and a resin layer arranged between the first conductive layer and the second conductive layer. The power element is embedded in the resin layer. The first conductive layer, the resin layer, and the second conductive layer are stacked on the heat dissipation member in this order from the ones closer to the heat dissipation member.

Abstract: An electronic device includes a heat dissipation member, a power element that is thermally coupled to the heat dissipation member, and a first conductive layer to which the power element is electrically coupled. The electronic device further includes a control element that controls a switching operation of the power element, a second conductive layer to which the control element is electrically coupled, and a resin layer arranged between the first conductive layer and the second conductive layer. The power element is embedded in the resin layer. The first conductive layer, the resin layer, and the second conductive layer are stacked on the heat dissipation member in this order from the ones closer to the heat dissipation member.

Abstract: In a laminating direction of first to fifth ceramic sheets, a first slit and a second slit are positioned closer to a first mounting section and a second mounting section than a first communication hole, a second communication hole, a third communication hole and a fourth communication hole. Moreover, an overlapping section where each first slit and the first communication hole overlap, and an overlapping section where each second slit and the third communication hole overlap, are positioned in the vicinity of an area where the first mounting section and the second mounting section are disposed when viewed from the laminating direction of the first to fifth ceramic sheets.

Abstract: Disclosed is a heat dissipation device which is reduced in the number of components, while having sufficient insulating function and cooling function with respect to an object to be cooled. The heat dissipation device includes a base that is formed from a ceramic and a refrigerant channel for circulating a refrigerant within the base. The base is formed by sintering a stacked body in which a plurality of ceramic sheets are stacked. The plurality of ceramic sheets include the ceramic sheet which is provided with a plurality of slits that constitute the refrigerant channel, and the ceramic sheets which are provided with communication paths that communicate the refrigerant channel and outside units with each other. A semiconductor device is configured by bonding a metal plate, on which a semiconductor element is mounted, to the heat dissipation device.

Abstract: In a laminating direction of first to fifth ceramic sheets, a first slit and a second slit are positioned closer to a first mounting section and a second mounting section than a first communication hole, a second communication hole, a third communication hole and a fourth communication hole. Moreover, an overlapping section where each first slit and the first communication hole overlap, and an overlapping section where each second slit and the third communication hole overlap, are positioned in the vicinity of an area where the first mounting section and the second mounting section are disposed when viewed from the laminating direction of the first to fifth ceramic sheets.

Abstract: A back metal layer (16, 31) has a plurality of stress relaxation spaces (17). Each stress relaxation space (17) is formed to open at least at one of the front surface and the back surface of the back metal layer (16, 31). A region in the back metal layer (16, 31) that is directly below a semiconductor device (12) is defined as a directly-below region (A1), and a region outside the directly-below region (A1) that corresponds to and has the same dimensions as the directly-below region (A1) is defined as a comparison region (A21). The volume of the stress relaxation spaces (17) in the range of the directly-below region (A1) is less than the volume of the stress relaxation spaces (17) formed in the range of the comparison region (A21).

Abstract: Provided are a flow path member that suppresses flow path breakage, a heat exchanger and a semiconductor device using the same. This flow path member has a flow path in which a fluid flows and which is constituted by a lid portion, a partition wall portion, a side wall portion and a bottom plate portion. At least one of the partition wall portion and the sidewall portion is partly embedded in at least one of the lid portion and the bottom plate portion for direct connection.

Abstract: A semiconductor device includes a cooling portion, which is made of ceramic or resin and includes a mounting surface, a metal circuit board, which is mounted on the mounting surface of the cooling portion and includes an element mounting surface, and a semiconductor element mounted on the element mounting surface of the circuit board. At least a part of the circuit board, which corresponds to the element mounting surface, is covered with resin with respect to the cooling portion.

Abstract: A double-sided substrate includes a ceramic substrate, a first metal layer formed on one surface of the ceramic substrate and having a plurality of subsidiary metal layers which are laminated on the surface of the ceramic substrate and whose purities differ from each other and a second metal layer formed on the other surface of the ceramic substrate, wherein the closer to the ceramic substrate any subsidiary metal layer is located, the lower purity the subsidiary metal layer has. Additionally, a semiconductor includes the above double-sided substrate, a power element and a heat sink.

Abstract: A heat dissipation device includes an insulating substrate, a metal layer connected to the insulating substrate via a first brazing filler material, a stress relaxation member connected to the insulating substrate via a second brazing filler material, and a cooler connected to the stress relaxation member via a third brazing filler material. The stress relaxation member has one or more stress relaxation spaces each including an opening that is open to at least one of a face side and a back side of the stress relaxation member. At least one of the second and third brazing filler materials has one or more through-holes. Each through-hole includes an opening overlapped with the opening of the stress relaxation space or with the opening of a corresponding one of the stress relaxation spaces, and an edge of each through-hole opening is located externally to an edge of the corresponding stress relaxation space opening.

Abstract: Disclosed is a heat dissipation device which is reduced in the number of components, while having sufficient insulating function and cooling function with respect to an object to be cooled. The heat dissipation device includes a base that is formed from a ceramic and a refrigerant channel for circulating a refrigerant within the base. The base is formed by sintering a stacked body in which a plurality of ceramic sheets are stacked. The plurality of ceramic sheets include the ceramic sheet which is provided with a plurality of slits that constitute the refrigerant channel, and the ceramic sheets which are provided with communication paths that communicate the refrigerant channel and outside units with each other. A semiconductor device is configured by bonding a metal plate, on which a semiconductor element is mounted, to the heat dissipation device.

Abstract: A back metal layer (16, 31) has a plurality of stress relaxation spaces (17). Each stress relaxation space (17) is formed to open at least at one of the front surface and the back surface of the back metal layer (16, 31). A region in the back metal layer (16, 31) that is directly below a semiconductor device (12) is defined as a directly-below region (A1), and a region outside the directly-below region (A1) that corresponds to and has the same dimensions as the directly-below region (A1) is defined as a comparison region (A21). The volume of the stress relaxation spaces (17) in the range of the directly-below region (A1) is less than the volume of the stress relaxation spaces (17) formed in the range of the comparison region (A21).

Abstract: A double-sided substrate includes a ceramic substrate, a first metal layer formed on one surface of the ceramic substrate and having a plurality of subsidiary metal layers which are laminated on the surface of the ceramic substrate and whose purities differ from each other and a second metal layer formed on the other surface of the ceramic substrate, wherein the closer to the ceramic substrate any subsidiary metal layer is located, the lower purity the subsidiary metal layer has. Additionally, a semiconductor includes the above double-sided substrate, a power element and a heat sink.

Abstract: A contents management system provides a user who already downloaded valid contents with a mechanism capable of downloading the same contents in a duplication manner. A system for delivering contents checks whether contents which are about to be purchased by the user are the same as contents which are in a validity term and which are already downloaded by the user. If so, the system prepares a new contents ID, DL information and meta information for duplicated buying, and makes duplicated buying of the same contents possible.

Abstract: A semiconductor device has a ceramic substrate having a first surface and a second surface, a metal layer that is coupled to the second surface, a heat sink that is coupled to the metal layer and a stress relaxation member. The stress relaxation member is arranged between the metal layer and the heat sink and has a first surface that is coupled to the metal layer and a second surface that is coupled to the heat sink. A plurality of stress relaxation spaces are provided over the entire surface of at least one of the first and second surfaces of the stress relaxation member. The stress relaxation spaces that are arranged at the outermost portions of the stress relaxation member are deeper than the other stress relaxation spaces.

Abstract: A broadcasting facsimile transceiver has a transmission controller which, in the broadcasting mode, inhibits broadcasting communications during a predetermined interval of time ranging from the completion of transmission to a destination to the commencement of transmission to the succeeding destination. The transceiver also includes a scanning unit for reading a document and delivering video data, a data compression unit for compressing the video data, a memory unit for storing compressed video data from said data compression unit, a reproduction unit for reading the compressed video data stored in said memory unit, a MODEM for transmitting the video data to a communication line.

Abstract: A high-speed G3 facsimile communication system for shortening the time required for procedure control performed before transmission of image data is started, a quiescent time intervening between the connection of a receiver equipment to the transmission line and the starting of sending the control procedure signal CED is utilized for sending out a newly provided procedure shortening signal to the receiver equipment, and upon receiving a response of the receiver equipment indicating that the receiver is capable of communicating in an optional mode other than G3 mode, the sender station sends subsequently the requisite control procedure signal from the high-speed modem thereof.